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IEEE Transactions on Electron Devices

Issue 3 • March 1965

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1965, Page(s): 87
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  • Charge storage effects in silicon dioxide films

    Publication Year: 1965, Page(s):88 - 96
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1130 KB)

    The dc properties of the system Si:SiO2(6000 Å), metal have been investigated at 200-400°C. The system shows unidirectional conduction at 400°C. Little or no current is observed when the silicon electrode is positive. There is a region of reversible charge storage and discharge at negative silicon voltages; the center of this region is around -2 volts when the contact met... View full abstract»

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  • The defect structure of grown silicon dioxide films

    Publication Year: 1965, Page(s):97 - 102
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    A structural model is proposed to explain various phenomena which occur in grown SiO2films. In this model, oxygen interstitials in ionic form are the predominant diffusing species during the growth. In neutral form they can act as acceptor states. Reduction of the oxide by hydrogen (e.g., growth in steam, heat treatment in H2containing gas) or by metal (e.g., interaction with... View full abstract»

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  • Electronic interaction between impurities in the oxide film and the semiconductor substrate

    Publication Year: 1965, Page(s):102 - 104
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (407 KB)

    Electronic interactions between impurities incorporated into the oxide film on silicon (or other semiconductors) and the semiconductor substrate are postulated. The impurities are presumed to change the Fermi level in the oxide, thus causing charge transfer between the oxide and the semiconductor surface. The anodic behavior ofN-type silicon contacting an electrolyte as a function of im... View full abstract»

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  • Hydrogen-induced surface space-charge regions in oxide-protected silicon

    Publication Year: 1965, Page(s):104 - 107
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    This paper presents data on the effects of hydrogen heat treatments on oxide-protected silicon. The test vehicle is a metal-oxide-semiconductor (MOS) transistor with its metal gate electrode not yet attached. The device was exposed to a hydrogen-containing atmosphere for various times and temperatures, and the resultant channel resistances were monitored. These resistances were then normalized to ... View full abstract»

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  • Lateral AC current flow model for metal-insulator-semiconductor capacitors

    Publication Year: 1965, Page(s):108 - 117
    Cited by:  Papers (23)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1088 KB)

    The admittance-voltage characteristic of a metal-insulator-semiconductor capacitor is explained in the depletion-inversion range for the case in which the entire surface of the semiconductor is inverted by charges in the insulator and the frequency is too high for minority carriers to follow. Lateral ac current flow into the inverted layer beyond the field plate has to be considered. The model is ... View full abstract»

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  • Ring-dot impedance measurement, a simple technique for measuring inversion-layer conductance in semiconductors

    Publication Year: 1965, Page(s):118 - 121
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    Impedance measurements utilizing evaporated ring-dot metal-oxide-semiconductor (MOS) structures are shown to give accurate values of sheet conductance of inversion layers. The well-defined geometry simplifies evaluation of experimentally measured quantities. The results obtained are shown to be independent of the geometry of the test structures and of frequency. Limitations of the technique due to... View full abstract»

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  • Impedance of a semiconductor surface at flat band condition

    Publication Year: 1965, Page(s):121 - 128
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    The ac surface impedance of a homogeneously doped semiconductor is calculated for the dc bias resulting in flat energy bands and assuming thermal equilibrium of the dc carrier distributions. This special case is distinguished by the availability of a complete solution for any bulk lifetime for the small signal linearized case. Two basic modes of ac carrier distributions arise which represent, resp... View full abstract»

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  • Carrier mobility and current saturation in the MOS transistor

    Publication Year: 1965, Page(s):129 - 138
    Cited by:  Papers (37)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1048 KB)

    Consideration is given to the phenomenon of saturation of drain current in the insulated-gate field-effect transistor. The effect of limited carrier drift velocity in the transistor channel is evaluated, and a quantitative theory developed to predict behavior in such a region of current flow. It is shown that the "paradox" of complete pinch-off at the drain need not necessarily be resolved by post... View full abstract»

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  • Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)

    Publication Year: 1965, Page(s):139 - 141
    Cited by:  Papers (67)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (281 KB)

    A detailed analysis is performed yielding source to drain resistance of MOS transistors in the saturation region. The analysis is based on a depletion model of the pinched-off region of the channel. Good agreement is found between theory and experimental results obtained onN-channel silicon MOS transistors (channel length ∼5 µ). View full abstract»

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  • Temperature dependence of n-type MOS transistors

    Publication Year: 1965, Page(s):142 - 148
    Cited by:  Papers (28)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (710 KB)

    Ionization of surface states with increasing temperature is shown to be responsible for the positive temperature coefficient of the drain current often observed inn-type silicon MOS transistors. Competition of this effect with a decrease in mobility for increasing temperature is demonstrated to yield transistors with negative, positive, or zero temperature coefficients. The reflection o... View full abstract»

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  • Theory of noise in metal oxide semiconductor devices

    Publication Year: 1965, Page(s):148 - 156
    Cited by:  Papers (86)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (958 KB)

    Noise in MOS diodes arises from different sources: fluctuations in occupation of surface states, shot noise, and leakage noise. Fluctuations in the occupation of surface states produce changes in the surface space-charge distribution which in turn produce currents. Shot noise is produced by fluctuations of the individual drift and diffusion flows toward the surface. Leakage noise is associated wit... View full abstract»

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  • [Back cover]

    Publication Year: 1965, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it