IEEE Transactions on Electron Devices

Issue 2 • Feb. 1965

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Displaying Results 1 - 8 of 8
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
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    Freely Available from IEEE
  • Small signal equivalent circuit of unsymmetrical junction diodes at high current densities

    Publication Year: 1965, Page(s):47 - 55
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (876 KB)

    Finite difference equation methods and lumped models are applied to the solution of the differential equations for the carrier flow through a quasi-neutral semiconductor bulk region at low, moderate and high injection densities. An unsymmetrically doped diode is approximated by a single section lumped model. The static I-V characteristics for this model at low and high current densities are derive... View full abstract»

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  • High-speed photodiode signal enhancement at avalanche breakdown voltage

    Publication Year: 1965, Page(s):55 - 63
    Cited by:  Papers (52)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1077 KB)

    It has previously been found that when photons are injected into a photodiode biased to the avalanche region, that there is a multiplication of the signal over the usual bias-voltage signal level. This multiplication is due to the created electron-hole pairs colliding with the lattice and creating more electron-hole pairs under the influence of the large biasing field. This paper presents a circui... View full abstract»

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  • Saturation effects in solid-state laser amplifiers

    Publication Year: 1965, Page(s):63 - 66
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A phenomenological treatment of saturation effects in solid-state laser amplifiers is presented. Numerical calculations are carried out for neodymium doped CaWO4and glass amplifiers. View full abstract»

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  • The insulated gate tunnel junction triode

    Publication Year: 1965, Page(s):66 - 76
    Cited by:  Papers (22)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1430 KB)

    The gate modulated voltage breakdown of the drain diode in the MOS transistor is considered and shown to be direct electric field control of a reverse biased surfacep+-njunction. A structure designed to isolate this effect has been suggested by Atalla and experimentally evaluated by Nathanson, et al., and by the authors. The mechanism of operation discussed involves the application of a... View full abstract»

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  • Electrical breakdown in vacuum

    Publication Year: 1965, Page(s):77 - 83
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1144 KB)

    Theories and experimental facts of vacuum breakdown are reviewed. Measurements with gap spacings of 0.015 inch indicate little or no variation of breakdown with tube pressure between approximately 10-5and 10-7torr and with frequency of the applied voltage from 0 to 6 Mc/s. Variation of electrode materials, geometry, and surface preparations provide no marked improvements, but... View full abstract»

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  • Optimum length of emitter stripes in 'comb' structure transistors

    Publication Year: 1965, Page(s):84 - 85
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1965, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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email giovanni.ghione@polito.it