IEEE Transactions on Electron Devices

Issue 1 • Jan. 1965

Filter Results

Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (143 KB)
    Freely Available from IEEE
  • Interactions between closely coupled GaAs injection lasers

    Publication Year: 1965, Page(s):1 - 4
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    Interaction effects between injection lasers have been experimentally studied at 2°K and 77°K under pulse conditions in a single block configuration which permits close optical coupling between the lasers. This close coupling made previously reported effects an order of magnitude more prominent and revealed a new effect. The reduction of the threshold current of one laser by the influenc... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Lateral effects in high-speed photodiodes

    Publication Year: 1965, Page(s):5 - 12
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB)

    The effect of the sheet resistance of the diffused region of a p-n junction photodiode on the diode response is discussed. A differential equation is obtained for diffused region potential in terms of its sheet resistance and the manner in which the diode is illuminated. For zero external bias and low light levels or for large back-bias, the differential equation is linear. The linear equation has... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Characteristics of diffused P-N junctions in epitaxial layers

    Publication Year: 1965, Page(s):13 - 19
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    A one-dimensional analysis has been made to determine properties of diffused p-n junctions in epitaxial layers with nonuniform impurity concentration. Impurity diffusion from the surface and from the substrate is assumed to have complementary error function distribution. The transcendental equations obtained by analytical integration of Poisson's equation were evaluated numerically with the IBM 70... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The minimization of parasitics in integrated circuits by dielectric isolation

    Publication Year: 1965, Page(s):20 - 25
    Cited by:  Papers (6)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    A radically new technique for the fabrication of integrated circuits which completely changes microelectronic design is described. In place of the back-biased pn junctions usually used for isolation of devices in a substrate, a dielectric is substituted whose properties are such that almost total isolation is achieved with no increase in area. Leakage currents are reduced by several orders of magn... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Current noise in finite-sized specimens

    Publication Year: 1965, Page(s):25 - 31
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The spatial correlation of generation-recombination noise in intrinsic germanium is investigated. In an analytical model the specimen is assumed to consist of mutually uncorrelated elements of resistance fluctuation. By comparison with measured values the size of the mutually uncorrelated elements is found to be approximately equal to four times the diffusion length of excess carriers in the semic... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Harmonic generation by electron beam pattern motion—the Bermutron

    Publication Year: 1965, Page(s):31 - 39
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1072 KB)

    The description and theory of a method of generating harmonics of a microwave signal by deflection of an electron beam are presented, Examples of deriving output power at harmonics of the deflection frequency for either circular or linear deflection patterns and for both waveguide and cavity output are treated. The system is unusual in that there is power transfer between two streams of energy tha... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A solution to the problem of spontaneous deflection of the beam in TWT's with low helix voltage

    Publication Year: 1965, Page(s):40 - 44
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    The spontaneous deflection of the beam in low voltage, typically low noise, traveling-wave tubes has been studied and attributed to the accumulation of stray charges on the glazed helix rods. A means of measuring the tendency of the helix to show these charging effects will be described. A method of processing of the complete helix which prevents the accumulation of charges but does not seriously ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1965, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (603 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it