IEEE Transactions on Electron Devices

Issue 10 • Oct. 1964

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Displaying Results 1 - 7 of 7
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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  • Capacitive design considerations for film-type and integrated circuits

    Publication Year: 1964, Page(s):447 - 455
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (816 KB)

    A critical survey of capacitive effects in thin-film structures was made and design parameters to assess interelectrode coupling in integrated circuits were determined. By applying judiciously conformal mapping techniques, procedures and graphs were developed which permit evaluation of interfilm capacitances for many types of plane-parallel and cylindrical geometries. Representative designs of int... View full abstract»

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  • A self-consistent iterative scheme for one-dimensional steady state transistor calculations

    Publication Year: 1964, Page(s):455 - 465
    Cited by:  Papers (712)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1064 KB)

    A self-consistent iterative scheme for the numerical calculation of dc potentials and currents in a one-dimensional transistor model is presented. Boundary conditions are applied only at points representing contacts. Input data are: doping profile, parameters governing excess carrier recombination, parameters describing the dependence of mobility on doping and on electric field, applied emitter an... View full abstract»

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  • An analysis of the CdSe thin-film triode as a current limiter

    Publication Year: 1964, Page(s):466 - 470
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (567 KB)

    An analysis of the insulated-gate thin-film field-effect triode as a current limiter is presented, and a comparison between theory and experiment is made for samples with cadmium selenide as the semiconductor layer. The theoretical treatment involves the extension of the analysis ofp-njunction type current limiters to the thin-film, insulated-gate, field-effect device. Although the insu... View full abstract»

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  • Fine structure and electromagnetic radiation in second breakdown

    Publication Year: 1964, Page(s):470 - 478
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1008 KB)

    Thermal phenomena have been suggested as the initiating mechanisms for second breakdown in transistors. The experiments described below examine certain electrical and optical effects associated with second breakdown in order to determine if thermal effects can be held primarily responsible. In studying the open-base behavior of several types of devices, it was observed that second breakdown was fo... View full abstract»

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  • Verification and use of Herrmann's optical theory of thermal velocity effects in electron beams in the low perveance regime

    Publication Year: 1964, Page(s):479 - 485
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (784 KB)

    A comparison between Herrmann's optical theory and a pinhole probe study of a highly converged, perveance 0.015 × 10-6A/V3/2, electron beam in a confining magnetic field is presented. This comparison shows the theory to be obeyed with a good degree of accuracy. The application of the theory to the problem of optimizing the transmission of such thermal beams through long ... View full abstract»

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  • [Back cover]

    Publication Year: 1964, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it