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IEEE Transactions on Electron Devices

Issue 9 • Sept. 1964

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Change in editorial board

    Publication Year: 1964, Page(s): 405
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  • A critique of the theory of p-n-p-n devices

    Publication Year: 1964, Page(s):406 - 413
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (697 KB)

    A review of various papers dealing with p-n-p-n device characteristics shows essentially different interpretations of 1) the condition for switching and 2) the operating state defined byalpha_{p}+ alpha_{N} = 1. The present paper attempts to show the relationship between these various papers and to clarify the conditions which exist at the switching point and holding point. View full abstract»

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  • Space charge limited and emitter current limited injections in space charge region of semiconductors

    Publication Year: 1964, Page(s):414 - 422
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    If, in a space charge region of a semiconductor device, a unipolar drift current is a main component of the total current, an analogy with motion of electrons in vacuum exists. In the space charge limited emission, injection of minority carriers is limited by space charges, as in a punched-through p-n-p diode. On the other hand, in a transistor, minority carriers are injected into the depletion la... View full abstract»

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  • Measurement of avalanche multiplication of injected holds in germanium p-n-p diffused-base transistors

    Publication Year: 1964, Page(s):423 - 427
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (461 KB)

    A three-terminal dc measurement is made of avalanche multiplication of holes injected from the emitter into the collector junction of diffused-base germanium p-n-p transistors. The method is applicable to asymmetric thin-base transistors at currents at which dc base current is independent of base width when emitter to base voltage (VEB) is held constant. Injected collector current and V... View full abstract»

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  • Bipotential cathodes for reduction of grid current

    Publication Year: 1964, Page(s):428 - 433
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (696 KB)

    The useful operating range of triodes may be extended into the positive-grid region by preventing electrons from reaching the grid. To do so, electron emission must be suppressed from the cathode area under the grid, and the emission that does take place must be guided through the grid openings. Both of these requirements are met by the use of passive-base emitting areas and by clean metal nonemit... View full abstract»

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  • The theory of twisted transverse-wave couplers

    Publication Year: 1964, Page(s):434 - 440
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    The coupled-mode theory of a class of transverse-wave couplers in which the plane of polarization of the electric field rotates along the length of the coupler is described. The synchronism conditions between the circuit wave and the beam that lead to strong interaction with one or more of the transverse beam waves are given and the case of equal interaction with the two cyclotron waves is discuss... View full abstract»

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  • Thermal noise in Hall-effect twoports

    Publication Year: 1964, Page(s):441 - 442
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    First Page of the Article
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  • Transient microwave impedance of p-i-n switching diode

    Publication Year: 1964, Page(s): 441
    Cited by:  Papers (1)
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    First Page of the Article
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  • VSWR measurement of attenuators for helix-type traveling-wave tubes

    Publication Year: 1964, Page(s):442 - 445
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    First Page of the Article
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  • Correction [to "Spectrum deterioration caused by virtual cathodes in the subsynchronous region of a microwave magnetron"]

    Publication Year: 1964, Page(s): 445
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (107 KB)

    Summary form only given, as follows. Carlton G. Lehr, author of "Spectrum Deterioration Caused by Virtual Cathodes in the Subsynchronous Region of a Microwave Magnetron," which appeared on pages 180-182 of the April, 1964, issue of these Transactions, has called the following to the attention of the Editor. Mr. Lehr would like to thank R. Vaughn of the General Electric Company, Schnectady, N.Y., f... View full abstract»

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  • [Back cover]

    Publication Year: 1964, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it