By Topic

IEEE Transactions on Electron Devices

Issue 7 • Date July 1964

Filter Results

Displaying Results 1 - 10 of 10
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (126 KB)
    Freely Available from IEEE
  • A tribute, George D. O'Neill

    Publication Year: 1964, Page(s): 311
    Request permission for commercial reuse | PDF file iconPDF (259 KB)
    Freely Available from IEEE
  • Change in editorial board

    Publication Year: 1964, Page(s): 312
    Request permission for commercial reuse | PDF file iconPDF (163 KB)
    Freely Available from IEEE
  • Control of electric field at the surface of P-N junctions

    Publication Year: 1964, Page(s):313 - 323
    Cited by:  Papers (95)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1232 KB)

    Both degradation resulting from ion migration and surface breakdown of p-n junctions depend strongly on electric field. These problems can be minimized or avoided by designing p-n junction devices so that the electric field at the surface is substantially lower than that within the body of the device. The shape, surface ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Characteristics of the metal-Oxide-semiconductor transistors

    Publication Year: 1964, Page(s):324 - 345
    Cited by:  Papers (167)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2656 KB)

    The theory of the MOS transistor in the gradual channel approximation is presented with the assumption of constant surface and bulk charge, and constant surface mobility. From the simple theory, the complete design equations are derived and design curves are calculated. From the analysis, the equivalent circuit parameters of the device are related to the basic properties of the material and geomet... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions

    Publication Year: 1964, Page(s):345 - 349
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    The experimentally observed frequency dependences of the reverse-biased capacitance of gold-doped silicon step junctions over the frequency range from 10 cps to 30 Mc are found to be in agreement with a simple physical model which takes into account the charge condition and the charging and discharging time constant of the deep-gold acceptor level in the transition region of the junction. Analysis... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An improved design theory of a magnetron-injection gun

    Publication Year: 1964, Page(s):349 - 356
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (800 KB)

    An improved design theory of a magnetron-injection gun is presented, which is based on a "constant radius" approximation. This theory derives a correction term to be added to the solution of Kino-Taylor's planar theory. It is found that, within the adopted approximation, the only correction necessary to Kino-Taylor's theory is to take into account the effect of the centrifugal force. The corrected... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Spiral focusing for cathode-ray tubes

    Publication Year: 1964, Page(s):356 - 360
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    This paper describes a resistive lens or spiral lens, which uses a controlled voltage distribution on the inside of a cylinder for focusing. Electron-optically, this long electrostatic lens shares many of the features of a magnetic solenoid. These include a low degree of spherical aberration, high beam transmission, and a capability to operate as an immersion lens with an ultimate magnification of... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An electron-beam parametric conversion mechanism

    Publication Year: 1964, Page(s):361 - 362
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1964, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (422 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it