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IEEE Transactions on Electron Devices

Issue 6 • June 1964

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Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Properties of ring-plane slow-wave circuits

    Publication Year: 1964, Page(s):247 - 261
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1572 KB)

    Ring-plane circuits consist of circular rings or slotted pipes supported by one or more radial planes. These circuits propagate slow waves(v_{p} < c)in one or more modes, with velocity and impedance governed primarily by the ring or slot resonances much as on planar ladders. The multimode behavior depends very much on the mutual coupling near the radial planes. Tests of many variatio... View full abstract»

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  • Ring-plane traveling-wave amplifier: 40 KW at 9 MM

    Publication Year: 1964, Page(s):262 - 266
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (915 KB)

    A 9-mm traveling-wave tube (TWT) amplifier using a ring-plane circuit is described. This tube has produced a peak power of 43 kw at an efficiency of 12 per cent(2C)with a solid beam. Several guns producing solid and hollow beams have been used with comparable results at high voltages (15 to 100 kv) and low currents (0.11 to 3.8 a). A waveguide transition (special coupler) incorporating ... View full abstract»

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  • Frequency mixing in a relativistic electron beam

    Publication Year: 1964, Page(s):266 - 273
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    A theoretical analysis and an experimental study of millimeter wave generation by a fast wave interaction between a bunched electron beam and a transverse wave are reported in this paper. The technique appears to be practical for the generation of wavelengths as short as 1 to 2 mm. The experimental apparatus reported here converts power at a frequency of 9.17 Gc to power at a frequency of 39.71 Gc... View full abstract»

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  • Measurement of the spot noise of germanium, gallium antimonide, gallium arsenide and silicon Esaki diodes

    Publication Year: 1964, Page(s):273 - 285
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (918 KB)

    The spot (band-limited) noise of Ge, GaSb, GaAs and Si Esaki diodes was measured at 297°K for diodes having a peak current between 1 ma and 5 ma. The measurements were made at either 1 Mc or 30 Mc and at least one sample of each material was measured at a lower temperature (77°K or 188°K). The measured results are presented in terms of an equivalent noise current IEQwhich... View full abstract»

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  • Some effects of localized stress on silicon planar transistors

    Publication Year: 1964, Page(s):286 - 294
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    When local compressive stress is applied to the emitter surface of a silicon planar transistor, increases in collector and base currents are observed. From the relationship between these currents and the base-to-emitter junction potential, it is inferred that changes in minority-carrier current occur in the stressed material. It is well known that the energy gap of a semiconductor is affected by m... View full abstract»

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  • Design calculations for MOS field effect transistors

    Publication Year: 1964, Page(s):294 - 299
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    Design equations for the Metal-Oxide-Semiconductor Field Effect Transistor are developed. Approximate solutions for static characteristics, transconductance, and frequency cutoff are presented for the case of a very high resistivity substrate. Specific sets of static characteristics from computer calculations are presented graphically to illustrate the effects of oxide thickness and various substr... View full abstract»

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  • Low-frequency operation of four-terminal field-effect transistors

    Publication Year: 1964, Page(s):300 - 305
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    Interesting and useful behavior is obtained by operating a two-gate field-effect transistor as a four-terminal device. This paper considers important aspects of the low-frequency four-terminal behavior of a transistor with symmetrical geometry. The functional dependence of the drain current upon gate bias voltages and material and structural constants is determined, and four general modes of opera... View full abstract»

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  • Slow-wave dielectric circuit in traveling-wave tubes

    Publication Year: 1964, Page(s): 306
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    First Page of the Article
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  • Effective lifetime, a figure of merit for nanosecond diodes

    Publication Year: 1964, Page(s):306 - 308
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1964, Page(s): c4
    Cited by:  Papers (7)
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it