IEEE Transactions on Electron Devices

Issue 4 • April 1964

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Change in editorial board

    Publication Year: 1964, Page(s):125 - 127
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  • Small-signal, high-frequency theory of field-effect transistors

    Publication Year: 1964, Page(s):128 - 135
    Cited by:  Papers (43)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (603 KB)

    In this theory a field-effect transistor of planar geometry is considered as an active, distributed, nonuniform transmission line. The wave equation of this line is determined and solved by an approximation method. From this solution theyparameters are determined. By comparing the results for y11with van der Ziel's expression for the high-frequency gate noise of field-effect ... View full abstract»

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  • The BNR diode, a current-controlled negative-resistance device

    Publication Year: 1964, Page(s):136 - 147
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1350 KB)

    The bonded NR (negative-resistance) diode is a current-controlled negative-resistance device, fabricated in a similar manner as conventional gold-bonded diodes. Switching times of the device are a few nanoseconds. The I-V characteristic can be strongly controlled by magnetic fields and by illumination. Under continuous operation, magnetic sensitivity(partial V/partial B)_{I}up to about ... View full abstract»

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  • Correction factors for radial resistivity gradient evaluation of semiconductor slices

    Publication Year: 1964, Page(s):148 - 151
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    Accurate determinations of radial resistivity gradients on semiconductor slices, using the four-point probe, can be made only if correction factors for the finite boundary conditions are applied to the measurements. The off-center correction is different from the center correction. Both are necessary for gradient evaluation. These corrections were derived assuming homogeneous material, but are, ne... View full abstract»

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  • Rise and fall time calculations of junction transistors

    Publication Year: 1964, Page(s):151 - 155
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    Expressions for rise and fall time calculations of junction transistors are derived based on the charge controlled model. In solving the differential equation of the charge controlled model, a new approach is taken and exact solutions are obtained. Comparison of the experimental results of the rise and fall time measurements with the theoretical prediction, using the measured transistor parameters... View full abstract»

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  • The traveling-wave phototube part I: Theoretical analysis

    Publication Year: 1964, Page(s):156 - 163
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (848 KB)

    The traveling-wave phototube (TWP) is a broad-band photodetector which is useful for demodulation of light that has been amplitude-modulated at a microwave frequency, and for optical heterodyning of coherent light signals with microwave difference frequencies. In either application the light beam(s) results in the emission of a current-modulated electron beam from a photocathode; interaction betwe... View full abstract»

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  • The traveling-wave phototube part II: Experimental analysis

    Publication Year: 1964, Page(s):164 - 170
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (872 KB)

    This paper reports a detailed experimental investigation of the traveling-wave phototube (TWP) as a broad-band demodulator of microwave-modulated light. As Part II of a theoretical and experimental analysis of the interaction between a density-modulated photoelectron beam and a slow-wave circuit, it examines the output power, bandwidth and voltage modewidth of the traveling-wave phototube as a fun... View full abstract»

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  • Evaluation of the DC parameters and noise transport in the gun region of an injected-beam crossed-field diode

    Publication Year: 1964, Page(s):170 - 180
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (987 KB)

    A half-Maxwelliany-component velocity distribution and a full-Maxwellianz-component velocity distribution are assumed in order to evaluate the position and depth, ymand Vm, of the potential minimum as a boundary-value problem. The various dc parameters such as the voltage distribution, space-charge density, velocity and current density components and tra... View full abstract»

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  • Spectrum deterioration caused by virtual cathodes in the subsynchronous region of a microwave magnetron

    Publication Year: 1964, Page(s):180 - 182
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Experimental data on spectrum deterioration in a pulsed magnetron oscillator exhibited a correlation with the theory of the striated space-charge distribution in a smooth-bore magnetron. This correlation led to a formula which defines a region on the performance chart where spectrum deterioration can be expected. The validity of the formula was confirmed for four different magnetrons. View full abstract»

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  • Sensing characteristics of an electrostatic recording camera

    Publication Year: 1964, Page(s):183 - 190
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    The electrostatic recording camera can store a large number of pictures and provide for television transmission of these pictures at arbitrary times following optical exposure. This paper describes analytically the operation and performance of an electrostatic recording camera developed especially for use in observation satellites. The device is seen to have comparable signal-to-noise ratio and se... View full abstract»

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  • The violation of the threshold condition in a magnetron and its significance in the generation of noise

    Publication Year: 1964, Page(s): 191
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (120 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1964, Page(s): c4
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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it