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IEEE Transactions on Electron Devices

Issue 3 • March 1964

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Displaying Results 1 - 8 of 8
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Noise transport in the crossed-field diode

    Publication Year: 1964, Page(s):81 - 89
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (984 KB)

    The present work treats the transport of noise, originating at a thermionic cathode, across a planar crossed-field diode. A multivelocity Monte Carlo analysis is used to simulate thermionic emission by using random numbers to generate electron emission times and velocities. Trajectories for many charges are followed through the diode space by means of a high-speed digital computer. Measurements pe... View full abstract»

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  • Monte Carlo calculation of noise transport in a two-dimensional diode

    Publication Year: 1964, Page(s):90 - 97
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (910 KB)

    The noise transport phenomena in a two-dimensional diode operated under space-charge-limited conditions are investigated by means of the statistical Monte Carlo method. Effects on the transport characteristics of an electron beam by the multi-dimensional nature of the potential distribution in the vicinity of the potential minimum are evaluated. Contrary to both the single velocity and multiveloci... View full abstract»

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  • A synchronous-wave amplifier

    Publication Year: 1964, Page(s):98 - 101
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    The small-signal gain expression for an amplifier consisting of two resonant synchronous-wave couplers is presented and the results of an experimental investigation of such a tube are reported. Some theoretical studies of such an amplifier have been reported earlier but no experimental results have been given. The experimental tube operated at 3.00 kMc and employed a Brillouin flow beam with a dc ... View full abstract»

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  • Design and performance of an electrostatically focused 5-kw X-band traveling-wave tube

    Publication Year: 1964, Page(s):102 - 114
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1973 KB)

    A new type of high-power traveling-wave tube employing electrostatic beam focusing was developed and tested. An electrode system permitting the electrostatic focusing of a high-perveance electron beam was evolved and the incorporation of the focusing electrodes in the slow-wave circuit was accomplished without significant deterioration of the original RF characteristic. Feasibility was proven on a... View full abstract»

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  • A silicon symmetrical transistor utilizing an epitaxially grown base region

    Publication Year: 1964, Page(s):115 - 121
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1148 KB)

    A silicon symmetrical transistor having high symmetry of current gains, extremely low saturation resistance and high-frequency performance is fabricated by utilizing ap-type wafer with extremely low resistivity for the collector, ann-type epitaxial layer grown on the wafer for the base and ap-type region diffused into the layer for the emitter of the transistor. Hi... View full abstract»

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  • Maximum collector voltage and secondary breakdown in transistors

    Publication Year: 1964, Page(s): 122
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (112 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1964, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it