IEEE Transactions on Electron Devices

Issue 2 • Feb. 1964

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Nonlinear theory for laser diodes

    Publication Year: 1964, Page(s):41 - 46
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (560 KB)

    This paper outlines a nonlinear theory for the output power vs excitation current of an injection diode laser. The dependence upon electric field amplitude of effective negative conductivity in the region of inverted population derived and used to determine the level of steady oscillation in the quasilinear approximation (nonlinear conduction current small compared with displacement current). This... View full abstract»

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  • Noise in nonreciprocal two ports based on Hall effect

    Publication Year: 1964, Page(s):47 - 50
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (406 KB)

    The noise behavior of four-terminal Hall-effect elements withR_{12} = -R_{21}is discussed. In the case of purely thermal noise, the noise sources at the input and output are uncorrelated. The noise figure is calculated, and a relationship between maximum available gain and noise figure is found ifR_{11} = R_{22}. The smallest noise figure which may be achieved is 7.66 db. The... View full abstract»

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  • Transistor noise at low temperatures

    Publication Year: 1964, Page(s):50 - 53
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (440 KB)

    It is shown that the shot noise theory of transistors holds for low temperatures in alloy junction transistors, provided that the effect of hole-electron pair recombination in the emitter transition region is taken into account. The discrepancy between theory and experiment reported by Lee and Kaminsky can be accounted for by the fact that this process was ignored. View full abstract»

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  • The silicon PIN diode as a microwave radar protector at megawatt levels

    Publication Year: 1964, Page(s):53 - 61
    Cited by:  Papers (56)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (928 KB)

    A silicon PIN diode developed for use as a microwave protector promises to have considerably greater reliability than gas T-R tubes. The switching action of the device results from the lowering of I layer resistance by conductivity modulation, caused either by sufficiently high microwave power levels or by applied dc bias. A theoretical analysis is presented here which yields equations for I layer... View full abstract»

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  • The quasi-static approximation for moving and finite temperature plasmas

    Publication Year: 1964, Page(s):62 - 65
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (432 KB)

    A stationary plasma in the presence of a magnetic field may be represented by an equivalent dielectric tensor. The equivalent dielectric tensor of a moving plasma, valid within the quasi-static approximation, is found by a Lorentz transformation of the dielectric tensor from a reference frame in which the plasma is at rest to one in which the laboratory is at rest. The range of validity of the die... View full abstract»

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  • Some studies on a high-perveance hollow-beam klystron

    Publication Year: 1964, Page(s):66 - 73
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (808 KB)

    The performance of an experimental high-perveance hollow-beam klystron has been investigated. Data of small- and large-signal operation are presented in this paper. For strong magnetic confinement of the beam, it is shown that gap interaction and gain and large-signal bunching are well predictable by the appropriate theories. A sensitivity of all measurable RF-quantities to the level of the focusi... View full abstract»

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  • Turn-on criterion for p-n-p-n devices

    Publication Year: 1964, Page(s): 74
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (144 KB)

    First Page of the Article
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  • A modification of the fletcher method for analyzing slow wave structures

    Publication Year: 1964, Page(s):74 - 75
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  • An electron gun for reducing ion oscillation in traveling wave tubes

    Publication Year: 1964, Page(s):75 - 76
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  • Conventional rising-sun magnetron for 120 Gc

    Publication Year: 1964, Page(s):76 - 77
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  • [Back cover]

    Publication Year: 1964, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
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