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IEEE Transactions on Electron Devices

Issue 1 • Jan. 1964

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Construction of a promethium-147 atomic battery

    Publication Year: 1964, Page(s):2 - 8
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    The feasibility of constructing an "atomic battery" by combining the β-emitting radioisotope Pm147and a semiconductor containing a p-n junction has been studied both theoretically and experimentally. The properties of cells made by diffusing a p-type impurity into n-type GaAs, p-impurity into n-type silicon (p/n) and n-impurity into p-type silicon (n/p) are compared. The problems a... View full abstract»

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  • Analysis and characterization of P-N junction diode switching

    Publication Year: 1964, Page(s):8 - 14
    Cited by:  Papers (24)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (529 KB)

    A new charge control model of a p-n junction diode is introduced in which the reverse current iRas well as the forward current IFare related to the chargeQstored in the base region by time constants τRand τF, respectively. The reverse switching transient is analyzed for normal switching operation where a constant current phase (stora... View full abstract»

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  • Impedance characteristics of an AC MHD generator

    Publication Year: 1964, Page(s):14 - 20
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    A study is made of those parameters, associated with the impedance of an ac MHD generator, which affect the power factor. It has been found that the addition of a ferromagnetic material in the region external to the plasma causes a significant increase in the power factor. An expression for the actual electrical power extracted from the generator, as determined by electrical impedance methods, is ... View full abstract»

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  • Efficiency of tapered backward-wave oscillators

    Publication Year: 1964, Page(s):20 - 30
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1095 KB)

    The effect of a tapered circuit phase velocity on the efficiency of an O-type backward-wave-oscillator (BWO) is investigated. Circuit tapers based on a hard-kernel-bunch approximation are derived. It is shown that when such tapers are applied to realistic BWO's higher efficiencies result. An experimentalS-band BWO with a variable pitch helix designed on the basis of the hard-kernel-bunc... View full abstract»

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  • Start-oscillation conditions in nonuniform backward-wave oscillators

    Publication Year: 1964, Page(s):31 - 37
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    The effects of nonuniformities in the circuit phase velocity and the beam potential on the start-oscillation conditions of an O-type backward-wave oscillator (BWO) are investigated. The nonuniformities include linear, quadratic, and exponential circuit phase velocity tapers and beam potential gradients. It is shown that for weak circuit phase velocity tapers or voltage gradients the start-oscillat... View full abstract»

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  • A new method of measuring noise parameters S and π of an electron beam

    Publication Year: 1964, Page(s):37 - 38
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    First Page of the Article
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  • Slow-wave dielectric circuits in traveling-wave tubes

    Publication Year: 1964, Page(s):38 - 39
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1964, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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