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IEEE Transactions on Electron Devices

Issue 6 • Nov. 1963

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1963, Page(s): c1
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    Freely Available from IEEE
  • Measurement of transistor high-frequency current gain

    Publication Year: 1963, Page(s):343 - 351
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    An approach commonly used in instruments to test the high-frequency current gain of transistors consists of driving the base with a calibrated current source and measuring the collector current with a very low resistance meter. The major shortcomings of such instruments are their insufficient accuracy and their limited range of quiescent test conditions. However, a thorough analysis of this method... View full abstract»

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  • Common emitter breakdown

    Publication Year: 1963, Page(s):351 - 356
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (631 KB)

    A theory of the current-voltage characteristics with grounded emitter and open base is developed in a first approximation form. The results show the typical negative resistance region characteristic of theseI-Vcurves, and the theory indicates the important parameters which control this negative resistance. The containment of the emitter current with subsequent development of "hot spots"... View full abstract»

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  • Concentration-dependent diffusion of boron and phosphorus in silicon

    Publication Year: 1963, Page(s):357 - 359
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (327 KB)

    A calculation is made of the tail of the impurity concentration profile resulting from concentration-dependent diffusion from a constant surface concentration into a semi-infinite medium. The calculation predicts that if the concentration dependence at low impurity concentrations is negligible, the low concentration portion of the doping profile should still take the familiar form,C = C'_{s} ... View full abstract»

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  • The tunnel resistor

    Publication Year: 1963, Page(s):359 - 363
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    Nonlinear load resistors in high-speed tunnel-diode computer circuits offer several advantages over conventional linear load resistors, namely reduced power dissipation and therefore higher packing density, increased switching speed and relaxed tolerances on the power supplies. Such resistors have been constructed by combining a tunnel-diode junction with tunneling leakage paths on the surface of ... View full abstract»

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  • Carrier concentration optimization in semiconductor thermoelements

    Publication Year: 1963, Page(s):364 - 370
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (663 KB)

    This paper considers the problem of carrier concentration optimization giving attention to the temperature dependence of the material parameters. The equations to be satisfied by the optimum constant and optimum variable carrier concentrations, in order to obtain maximum "average parameters" figure of merit are derived. The equations are obtained in general form so that they can be applied to any ... View full abstract»

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  • Noise-figure calculations for crossed-field forward-wave amplifiers

    Publication Year: 1963, Page(s):370 - 378
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (944 KB)

    The problem of finding an adequate model for derivation of noise-figure expressions for crossed-field forward-wave amplifiers is investigated. The modified Llewellyn-Peterson equations are used for the portion of the beam near the cathode. Four waves, two cyclotron waves and two space-charge waves, are used for the space connecting the gun and interaction region. Noise-figures are found by conside... View full abstract»

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  • Monte Carlo calculation of noise transport in electric and magnetic fields

    Publication Year: 1963, Page(s):378 - 388
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1024 KB)

    In computing noise transport by the Monte Carlo technique, electrons, their two velocity components and emission times, are generated in a random manner. The electron equations of motion are integrated numerically to determine subsequent position and velocity coordinates of the electrons. In the first phase of the computer program initial conditions are specified in order to fill the diode. In the... View full abstract»

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  • Start-oscillation conditions of tapered backward-wave oscillators

    Publication Year: 1963, Page(s):389 - 393
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    Coupled-mode theory is employed to describe the interaction between nonuniform electron beams and circuits. It is then applied to determine the start-oscillation conditions of a tapered backward-wave oscillator. It is shown that under high space-charge operating conditions where the coupling to the fast space-charge wave is negligible and for weak circuit tapers, an approximate closed form solutio... View full abstract»

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  • Design of hollow and strip beam guns

    Publication Year: 1963, Page(s):394 - 404
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1344 KB)

    This paper covers a study of strip and hollow beam guns. An automatic electron trajectory tracer has been used to study the properties of the slit-anode lens common to these types of guns. A thin beam approximation was made so that a flat-bottom electrolytic tank could be used. The results of this study have been incorporated into gun design charts. Eight hollow beam guns have been built and teste... View full abstract»

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  • Resolution of electrostatic storage targets

    Publication Year: 1963, Page(s):404 - 409
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    In the class of electrostatic storage devices, which includes image orthicons, vidicons and certain signal recorders, a reading electron beam senses the potential distribution rather than the written charge distribution on a target. The transformation of a charge pattern into a potential pattern on a dielectric surface can be considered an imaging process. In this paper the theoretical aperture re... View full abstract»

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  • A scan-conversion tube utilizing fiber-optics photon transfer

    Publication Year: 1963, Page(s):410 - 416
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1144 KB)

    Scan-conversion tubes utilizing fiber-optics photon transfer (FOPT) are currently being developed by the Westinghouse Electric Corporation under contract from the United States Army Electronics Research and Development Laboratory. The tubes consist of three major components: a reading electron gun, a writing electron gun and an interjacent scan-conversion target. The targets consist of a fiber-opt... View full abstract»

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  • Generation of millimeter waves by means of the Doppler effect

    Publication Year: 1963, Page(s): 417
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (120 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1963, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Giovanni Ghione
Politecnico di Torino,
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