IEEE Transactions on Electron Devices

Issue 1 • Jan. 1963

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Displaying Results 1 - 10 of 10
  • [Front cover and table of contents]

    Publication Year: 1963, Page(s): c1
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    Freely Available from IEEE
  • Nondegenerate electron beam parametric amplifiers

    Publication Year: 1963, Page(s):1 - 8
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1104 KB)

    Cyclotron wave amplifiers with a pump-to-signal frequency ratio of 5:1 (rather than the usual 2:1) have been built and have given a single-channel noise figure of 2 db. This paper reports on the difficulties which had to be overcome and the restrictions which had to be observed before achieving what, at the start, had looked deceptively simple. The paper begins with a discussion of the relative me... View full abstract»

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  • Electron beam switched P-N junctions

    Publication Year: 1963, Page(s):8 - 12
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    A high-speed, high-power switching device is analyzed and experimental results presented. The device consists of a back-biased p-n junction switched by an electron beam. A single position tube for use as a magnetic core driver has been tested. The device operated at a beam voltage of 19 kv and can give a 150-v, 1.5-a output pulse with a rise time of less than 4 nsec and a maximum device power diss... View full abstract»

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  • A general catalog of gain, bandwidth and noise temperature expressions for four-frequency parametric devices

    Publication Year: 1963, Page(s):13 - 30
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1272 KB)

    During the last five years, papers on parametric devices have profusely filled the literature. In parametric devices there are many possible arrangements of ports and spectrum modes. Most authors have concentrated upon configurations which yield useful gain together with low-noise performance; however, the degree of rigor, the various assumptions, and the nomenclature used by various authors make ... View full abstract»

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  • Analysis of field effect transistors with arbitrary charge distribution

    Publication Year: 1963, Page(s):31 - 34
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    Solutions of field effect equations in which carrier density and space-charge distributions are considered in general form show that the LF terminal characteristics are not strongly dependent on the shape of the distribution curves. General expressions for mutual transconductance, output conductance, junction capacitance and current amplification are derived as functions of the depletion layer thi... View full abstract»

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  • A unified treatment of semiconductor boundary value problems

    Publication Year: 1963, Page(s):35 - 43
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    A unified approach to the solution of semiconductor boundary value problems is presented. The terminal voltage (including bulk drops) is derived by taking the total current as the independent variable. At semiconductor interfaces relationships between potential drops and carrier concentrations in the neutral regions are reviewed in terms of both the electrostatic and electrochemical potentials. Th... View full abstract»

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  • On multiplication and avalanche breakdown in exponentially retrograded silicon P-N junctions

    Publication Year: 1963, Page(s):44 - 51
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    An analysis of avalanche breakdown in exponentially retrograded p-n junctions results in simple criteria for avoiding breakdown in such structures. Breakdown voltages are shown to be extremely dependent on the surface concentration and grading constant of the retrograded region. The effect of background resistivity on breakdown is also analyzed. Unusual saturation effects in the multiplication vol... View full abstract»

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  • Junction capacitance switches

    Publication Year: 1963, Page(s):51 - 58
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    The design of junction capacitance switches consisting of a combination of abrupt junctions is considered. Theoretical characteristics are calculated for ideally abrupt junctions. The possibilities of fabrication by alloying and epitaxial growth are briefly discussed. View full abstract»

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  • Cold cathode operation of a hot cathode magnetron

    Publication Year: 1963, Page(s): 59
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (160 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1963, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it