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IRE Transactions on Electron Devices

Issue 3 • July 1958

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Displaying Results 1 - 18 of 18
  • [Front cover and table of contents]

    Publication Year: 1958, Page(s): c1
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    Freely Available from IEEE
  • Germanium and silicon transistor structures by the diffused-meltback process employing two or three impurities

    Publication Year: 1958, Page(s):121 - 126
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (549 KB)

    The diffused-meltback process for making transistor structures involves growing a crystal containing a donor and an acceptor impurity, cutting the crystal into pellets, melting and refreezing part of a pellet, and then diffusing. Two impurities may be used to produce high-frequency silicon structures. For best results with germanium, three impurities are required for practical reasons. The two and... View full abstract»

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  • Characteristics, structure, and performance of a diffused-base germanium oscillator transistor

    Publication Year: 1958, Page(s):127 - 130
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (668 KB)

    The diffused-base transistor structure affords a degree of design flexibility not found in previous structures. This is true because it has a larger number of independently adjustable design parameters than the previous structures. Its flexibility has been exploited in an oscillator transistor for 200-mc service. Design analysis shows that low ohmic base resistance, low collector body resistance, ... View full abstract»

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  • An analysis of base resistance for alloy junction transistors

    Publication Year: 1958, Page(s):131 - 139
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    For the circular disk type of transistor geometry, as commonly used in alloy junction transistors, base resistance is determined by treating it as a boundary value problem. This treatment results from consideration of the over-all behavior of both minority and majority charge carriers in the base region and leads to an expression for base spreading resistance in terms of alpha, frequency, resistiv... View full abstract»

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  • Low-voltage operation of the retarding-field oscillator at X band and in the millimeter wavelength region

    Publication Year: 1958, Page(s):139 - 143
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    This paper concerns the partial development of two low-voltage designs of the retarding-field oscillator. These designs differ fundamentally in their power coupling system. The X -band model has coaxial-line coupling to a waveguide while the millimeter wavelength model has double-cavity coupling to a waveguide. The design developed at View full abstract»

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  • A process for making clean gas discharge tubes

    Publication Year: 1958, Page(s):143 - 147
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (984 KB)

    Tube assemblies of forsterite ceramic and titanium are outgassed and then sealed together with reactive alloys in an atmosphere of the noble gas with which they are to be filled. The gettering action of the hot titanium results in a very pure gas filling. Examples of gas tubes constructed by this new process include voltage regulators, voltage reference tubes, thyratrons, and spark gaps. This meth... View full abstract»

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  • Physical mechanisms leading to deterioration of transistor life

    Publication Year: 1958, Page(s):147 - 151
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    Life tests on surface-barrier-type transistors have been conducted at various temperatures and power levels to identify and characterize the mechanisms which cause the transistor characteristics to deteriorate with time. Three mechanisms have been isolated: the formation of solution cavities in the base of the transistor, an increase in surface recombination velocity, and a decrease in surface res... View full abstract»

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  • A 20 to 40-KMC backward-wave oscillator

    Publication Year: 1958, Page(s):152 - 156
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (663 KB)

    A 20 to 40-kmc backward-wave oscillator is described which employs a single-tape helix with a mean diameter of 0.039 inch and a length of 1.75 inch supported internally by a triangular sapphire rod. Physically, the helix is mounted in a hole drilled in the ridge of the output ridge waveguide, and a closely spaced hollow beam is located on the outside of the helix. The output from the helix passes ... View full abstract»

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  • The effect of an initial velocity spread on klystron performance

    Publication Year: 1958, Page(s):157 - 160
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (331 KB)

    The fundamental component of beam current in a klystron is calculated by integrating the contributions due to individual velocity classes. For relatively narrow velocity distributions and operation with optimum parameters, the ratio of fundamental current amplitude to that obtained for a uniform velocity beam is given by a simple ratio of Fourier transforms of the velocity distribution functions. ... View full abstract»

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  • A hybrid type traveling-wave tube for high-power pulsed amplification

    Publication Year: 1958, Page(s):161 - 166
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (709 KB)

    A hybrid-type traveling-wave tube suitable for high gain amplification at pulsed high-power levels is described. The device utilizes a filter-type loaded waveguide slow-wave circuit, with interaction below the propagating range of the circuit. This gives rise to a broad-band inductive-wall type of amplification with high gain per unit length. The particular structure outlined employs a spatial-har... View full abstract»

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  • Dielectric slow-wave structures for the generation of power at millimeter and submillimeter wavelengths

    Publication Year: 1958, Page(s):167 - 173
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (727 KB)

    Several new types of coupling structures, designed to extract energy from a megavolt electron beam at a harmonic of the frequency used to modulate the beam current, are considered. In particular, the advantages of a slow-wave device over a right cylindrical cavity are indicated. The slow-wave coupling device may be resonant or nonresonant; the latter corresponds to a Cerenkov radiator. Power measu... View full abstract»

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  • The reflex klystron as a negative resistance type amplifier

    Publication Year: 1958, Page(s):173 - 179
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (643 KB)

    A reflex klystron has been tested as a narrow-band amplifier at 11,000 mc. The performance is predicted rather accurately from simple theory and steady gain can now be obtained in the 30-db region with a bandwidth of the order of megacycles. A noise figure of 40 db was measured and the saturation power output was the same as the output of an oscillator. A circulator was used in these tests to sepa... View full abstract»

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  • Temperature sensitivity of current gain in power transistors

    Publication Year: 1958, Page(s):180 - 182
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (276 KB)

    An analysis is made of the factors causing the variation of current gain as a function of operating temperature. As a result, conclusions are reached which indicate that the base resistivity is the major single factor contributing to these variations. Finally, the results of this investigation are directed toward possible applications. View full abstract»

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  • Thermal velocity effects in magnetically confined beams

    Publication Year: 1958, Page(s):183 - 185
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (273 KB)

    The spreading of magnetically confined electron beams caused by thermal velocities has been investigated theoretically and experimentally. An analysis of the spreading of confined beams of various geometries (strip, rectangular, and cylindrical) is presented. The thermal spreading of a confined cylindrical beam was measured at the anode of a parallel-flow Pierce gun. A transparent fluorescent scre... View full abstract»

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  • Characteristics of traveling-wave tubes with periodic circuits

    Publication Year: 1958, Page(s):186 - 195
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1089 KB)

    An analysis of an electron beam which interacts with a chain of coupled resonators is presented. Several important characteristics of traveling-wave tubes which employ periodic slow-wave circuits are described. It is found that, even for a lossless circuit, the gain does not become large near either pass band edge although the interaction impedance does become very large. Furthermore, useful ampli... View full abstract»

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  • A Barkhausen-Kurz oscillator at centimeter wavelengths

    Publication Year: 1958, Page(s):196 - 205
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (935 KB)

    This paper describes a new device for the generation of high-frequency oscillations in the centimeter wavelength region with high efficiency and low starting currents. The tube is fundamentally a Barkhausen-Kurz oscillator [1] utilizing a resonant cavity and a magnetically focused electron beam, but with no accelerating grids. The important features of this tube are the use of a parabolic potentia... View full abstract»

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  • Frequency setting of klystron cavities

    Publication Year: 1958, Page(s): 205
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    First Page of the Article
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  • [Back cover]

    Publication Year: 1958, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

This Transaction ceased production in 1962. The current retitled publication is IEEE Transactions on Electron Devices.

Full Aims & Scope