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Quantum Electronics, IEEE Journal of

Issue 8 • Date Aug. 2005

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Displaying Results 1 - 15 of 15
  • Table of contents

    Publication Year: 2005 , Page(s): c1
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  • IEEE Journal of Quantum Electronics publication information

    Publication Year: 2005 , Page(s): c2
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  • Semiconductor laser with external resonant grating mirror

    Publication Year: 2005 , Page(s): 1049 - 1053
    Cited by:  Papers (7)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (272 KB) |  | HTML iconHTML  

    A resonant grating composed of an ion exchanged slab waveguide on a glass substrate with a corrugation grating at its surface is shown to perform as a wavelength selective external mirror of a semiconductor laser. Preliminary wavelength tuning is demonstrated. View full abstract»

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  • Influence of optical feedback time-delay on power-drops in vertical-cavity surface-emitting lasers

    Publication Year: 2005 , Page(s): 1054 - 1057
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (128 KB) |  | HTML iconHTML  

    The influence of optical feedback time delay on the average period of low-frequency fluctuations (LFF) in external cavity vertical-cavity surface-emitting lasers (VCSELs) is studied experimentally. The regularity of power dropouts is shown to increase with increased external cavity length. Coexistence of LFF and stable operation is observed when the external cavity length is close to the VCSEL coherence length. View full abstract»

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  • Estimating the parameters of semiconductor lasers based on weak optical feedback self-mixing interferometry

    Publication Year: 2005 , Page(s): 1058 - 1064
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (344 KB) |  | HTML iconHTML  

    The paper presents a practical approach for measuring the linewidth enhancement factor α of semiconductor lasers and the optical feedback level factor C in a semiconductor laser with an external cavity. The proposed approach is based on the analysis of the signals observed in an optical feedback self-mixing interferometric system. The parameters α and C are estimated using a gradient-based optimization algorithm that achieves best data-to-theoretical model match. The effectiveness and accuracy of the method has been confirmed and tested by computer simulations and experiments, which show that the proposed approach is able to estimate α and C with an accuracy of 6.7% and 4.63%, respectively. View full abstract»

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  • Analysis of phase locking in diffraction-coupled arrays of semiconductor lasers with gain/index coupling

    Publication Year: 2005 , Page(s): 1065 - 1074
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (600 KB) |  | HTML iconHTML  

    We develop an analytical model of the phase-locking mechanism for diffraction-coupled arrays of semiconductor lasers. While the phase-locking range is found to be limited by nonuniformities between the individual lasers, increasing the gain-index coupling can expand this range. Detailed computer simulations confirm these predictions. Recommendations are made for using arrays of surface-emitting lasers to improve the stability of phase locking. View full abstract»

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  • Fast 2R regeneration by coherent laser amplifiers

    Publication Year: 2005 , Page(s): 1075 - 1082
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (296 KB)  

    A new device concept based on coherent processing of optical signals and allowing generation of ultrafast all-optical functions is introduced. The device is modeled by rate equations and its functionality is demonstrated by studying the re-amplification and re-shaping (2R) regeneration of a 30-GHz signal in detail. The main components of the regenerator are phase-locked lasers, optical isolators and band pass filters. Small signal analysis of the model predicts that bandwidths in excess of 100 GHz might be attainable. The technological feasibility of the device is also discussed. View full abstract»

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  • Rabi oscillations for subpicosecond pulses in quantum-well optical amplifiers: interplay of carrier heating, nonlinear, and spectral effects

    Publication Year: 2005 , Page(s): 1083 - 1091
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (296 KB)  

    Using the Foreman effective mass Hamiltonian for strained InxGa1-xAs--InyGa1-yAszP1-z quantum wells, the propagation of subpicosecond pulses in a 1.55-μm optical amplifier was calculated. The multisubband carrier dynamics as well as the polarization dynamics were taken into account. Carrier heating and coherent light-carrier interactions as well as the interplay of these nonlinear processes and the amplifier dispersion are studied. Strong Rabi oscillations occur in the optical field of a propagated pulse, its frequency chirp, as well as in the carrier density and temperature. While the Rabi oscillation imposes negative frequency chirp and hence red-shifts the pulse spectrum, positive frequency chirp can occur due to the local gain dispersion, where the higher frequency components of the pulse have larger gain. Due to the Rabi oscillation, the spectrum of the amplified pulse is considerably distorted and sidebands emerge. For a linearly chirped input pulse, the spectrum of the output pulse can be either red-shifted or blue-shifted with respect to its center frequency, depending on its initial chirp. For strong pulse propagation, a pronounced pulse break up occurs when a 175-fs pulse propagates in the gain regime, while a significant pulse compression occurs when the pulse propagates at the transparency point. View full abstract»

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  • Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

    Publication Year: 2005 , Page(s): 1092 - 1096
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (176 KB) |  | HTML iconHTML  

    The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions. The calculations allow for dead space effects and for the low field electron ionization observed in InGaAs. The results confirm that impact ionization in the InGaAs absorption layer increases the excess noise in InP APDs and that the effect imposes tight constraints on the doping of the charge control layer if avalanche noise is to be minimized. However, the excess noise of InAlAs APDs is predicted to be reduced by impact ionization in the InGaAs layer. Furthermore the breakdown voltage of InAlAs APDs is less sensitive to ionization in the InGaAs layer and these results increase tolerance to doping variations in the field control layer. View full abstract»

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  • High-brightness CuBr MOPA laser with diffraction-limited throughout-pulse emission

    Publication Year: 2005 , Page(s): 1097 - 1101
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (368 KB) |  | HTML iconHTML  

    CuBr master oscillator-power amplifier (MOPA) laser system fitted with a generalized diffraction filtered resonator (GDFR) is reported to produce high-quality beam of throughout-pulse diffraction-limited laser emission at the repetition rate of ∼19 kHz. The comparison with typical (stable and unstable) resonator configurations for CuBr lasers has featured out its high brightness accompanied by a very low beam divergence permanent within laser pulse. This intrinsic characteristic of GDFR-MOPA laser radiation makes it a perfect light source for fine laser applications. View full abstract»

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  • Corrections to “Optical Gain and Saturation Characteristics of Quantum Dot Semiconductor Optical Amplifiers”

    Publication Year: 2005 , Page(s): 1102
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  • 5th International Conference on Numerical Simulation of Optoelectronics Devices (NUSOD'05)

    Publication Year: 2005 , Page(s): 1103
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  • IEEE/OSA Journal of Display Technology

    Publication Year: 2005 , Page(s): 1104
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    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics information for authors

    Publication Year: 2005 , Page(s): c3
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  • [Blank page - back cover]

    Publication Year: 2005 , Page(s): c4
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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University