Proceedings of the IEEE

Issue 12 • Dec. 1986

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Displaying Results 1 - 21 of 21
  • [Front cover and table of contents]

    Publication Year: 1986, Page(s): c1
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  • Scanning the issue

    Publication Year: 1986, Page(s):1603 - 1604
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  • Microprocessor technology trends

    Publication Year: 1986, Page(s):1605 - 1622
    Cited by:  Papers (19)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2270 KB)

    The rapid pace of advancement of microprocessor technology has shown no sign of diminishing, and this pace is expected to continue in the future. Recent trends in such areas as silicon technology, processor architecture and implementation, system organization, buses, higher levels of integration, self-testing, caches, coprocessors, and fault tolerance are discussed, and expectations for further ad... View full abstract»

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  • Semiconductor memory trends

    Publication Year: 1986, Page(s):1623 - 1635
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1254 KB)

    In retrospect, over the past decade and a half, semiconductor memories have been in the stage of youthful growth. A thousand times increase in density and a ten times increase in speed have been recorded. Semiconductor memories have thus been a key element in the revolutionary development of digital electronics. Today, they are undoubtedly entering their age of maturity. Their density limit will b... View full abstract»

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  • Semicustom and custom LSI technology

    Publication Year: 1986, Page(s):1636 - 1645
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1563 KB)

    Semicustom and custom LSIs have become very important for system manufacturers because they provide system products with distinctive features that cannot be furnished by using only standard LSIs such as microprocessors. From this point of view, rapid development is essential for semicustom and custom LSIs, but there are other factors to be considered for determining the device technology and desig... View full abstract»

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  • A perspective on CMOS technology trends

    Publication Year: 1986, Page(s):1646 - 1668
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2287 KB)

    Integrated circuit technology continues to evolve at a rapid pace, driven by the requirements of new applications for electronics of higher performance at ever lower cost. The attributes of CMOS technology in a ULSI environment are an ideal match to these requirements; thus CMOS is becoming the ubiquitous integrated circuit technology. The main feature of CMOS is the existence of complementary n- ... View full abstract»

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  • Bipolar trends

    Publication Year: 1986, Page(s):1669 - 1677
    Cited by:  Papers (17)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (795 KB)

    The development of bipolar technology in recent years is reviewed, and trends for future development are projected. The developments clearly point to three salient features of today's advanced bipolar transistors, namely i) self-aligned structure, ii) deeptrench isolation, and iii) polysilicon emitter contact. Both i) and ii) allow advanced bipolar devices to have much higher circuit density and l... View full abstract»

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  • Trends in advanced process technology—Submicrometer CMOS device design and process requirements

    Publication Year: 1986, Page(s):1678 - 1702
    Cited by:  Papers (11)  |  Patents (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2774 KB)

    Some of the trends in integrated circuit process development are described. The motivations or technical reasons for this activity are discussed. This effort will continue to develop the downsizing that increases functional density and performance. Limiting factors are examined and new technical developments that could enable CMOS density to be comparable with NMOS density are explored. Various is... View full abstract»

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  • Three-dimensional IC trends

    Publication Year: 1986, Page(s):1703 - 1714
    Cited by:  Papers (43)  |  Patents (284)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5717 KB)

    VLSI will be reaching to the limit of minimization in the 1990s, and after that, further increase of packing density or functions might depend on the vertical integration technology. Three-dimensional (3-D) integration is expected to provide several advantages, such as 1) parallel processing, 2) high-speed operation, 3) high packing density, and 4) multifunctional operation. Basic technologies of ... View full abstract»

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  • MOS VLSI reliability and yield trends

    Publication Year: 1986, Page(s):1715 - 1729
    Cited by:  Papers (54)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1944 KB)

    The yield and reliability capability of an MOS technology are shown to be the product of at least six different technological trends; namely those towards: 1) more complex device structures, 2) scaled down feature sizes, 3) increased wafer sizes, 4) factory automation, 5) increased die size and package lead counts, and 6) increasingly sophisticated computer-aided design tools. The capabilities of ... View full abstract»

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  • The use of computer aids in IC technology evolution

    Publication Year: 1986, Page(s):1730 - 1740
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1034 KB)

    Computer-aided analysis of integrated circuit devices has played a critical role for more than three decades of technology evolution. In the 1950s and early 1960s simulation was used extensively to characterize the operating principles of both bipolar and MOS devices. Bipolar effects such as base-width modulation and base pushout were characterized as well as MOS phenomena including gradual channe... View full abstract»

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  • Future trends in wafer scale integration

    Publication Year: 1986, Page(s):1741 - 1752
    Cited by:  Papers (26)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1143 KB)

    The dramatic increase in the functional density of VLSI has been achieved without greatly increasing the chip size. In wafer scale integration, the area of an entire wafer is made available to increase the functional density still further. However, the requirement for fault tolerance, additional levels of metallization, excess power dissipation, process conservatism to achieve finite yield, and no... View full abstract»

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  • Particle-beam fabrication and in situ processing of integrated circuits

    Publication Year: 1986, Page(s):1753 - 1774
    Cited by:  Papers (2)  |  Patents (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2022 KB)

    Particle beams, in their broadest context, have become the most common tools in the kit of the IC process engineer, In this paper the general characteristics of particle-beam technologies are systematically classified and critical applications issues are outlined. The uses of ion, electron, and photon beams for various processes (e.g., thin-film deposition, lithography, etching, doping) are review... View full abstract»

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  • The future of automation for high-volume Wafer fabrication and ASIC manufacturing

    Publication Year: 1986, Page(s):1775 - 1793
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2207 KB)

    Faced with increasing technical and commercial challenges from the Far East, many U.S. semiconductor manufacturers have been directing their efforts toward the Application-Specific Integrated Circuit (ASIC) or custom integrated circuit marketplace. This market is flourishing because advances in technologies such as gate arrays and standard cells now make it significantly easier to obtain system co... View full abstract»

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  • Matrix formulation for Dolph-Chebyshev beamforming

    Publication Year: 1986, Page(s):1799 - 1800
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (175 KB)

    Several methods have been developed for tapering or shading of line arrays to minimize minor lobes. A method developed by C. L. Dolph makes it possible to optimize the patterns so that 1), for any specified minor lobe, the narrowest possible major lobe is achieved; or 2), for any specified major-lobe width, the lowest possible minor-lobe levels are achieved. The procedure to calculate the required... View full abstract»

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  • Time-varying spectrum estimation for a general class of nonstationary processes

    Publication Year: 1986, Page(s):1800 - 1802
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    In a general class of nonstationary processes, the autocorrelation may have different time variation rates at different lags. The estimation of each lag in a manner consistent with its nature of nonstationarity yields a reduction in the variance of the spectrum estimate at different frequencies. View full abstract»

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  • Comment on "On zero location with respect to the unit circle of discrete-time linear system polynomials"

    Publication Year: 1986, Page(s):1802 - 1803
    Cited by:  Papers (2)
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  • Correction to "Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs"

    Publication Year: 1986, Page(s): 1803
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  • RC active filter design handbook

    Publication Year: 1986, Page(s): 1804
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  • Book alert

    Publication Year: 1986, Page(s):1805 - 1806
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  • [Back cover]

    Publication Year: 1986, Page(s): c4
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The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics.

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Meet Our Editors

Editor-in-Chief
H. Joel Trussell
North Carolina State University