Proceedings of the IEEE

Issue 5 • May 1983

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Displaying Results 1 - 21 of 21
  • [Front cover and table of contents]

    Publication Year: 1983, Page(s): c1
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  • Scanning the issue

    Publication Year: 1983, Page(s):547 - 549
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  • Device, circuit, and technology scaling to micron and submicron dimensions

    Publication Year: 1983, Page(s):550 - 565
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (15751 KB)

    From the discrete semiconductor component technology of the early 1960's, where the transition from the past focused on a major reduction in device size, i.e., from vacuum tubes to transistors, the emphasis from the late 1960's to the present has centered on integrating an ever-increasing number of devices on a chip. This trend has given rise to the acromyms SSI, MSI, LSI, and VLSI standing for sm... View full abstract»

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  • The development of device lithography

    Publication Year: 1983, Page(s):566 - 570
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (2162 KB)

    Lithography has been the principal pacing element in the development of complex integrated circuits. Although major programs in electron-beam lithography and X-ray lithography have developed new systems with smaller feature capability, the optical systems remain the only candidates for large-volume device production. Scanning and step-and-repeat optical systems have been developed for the next gen... View full abstract»

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  • Resists for fine-line lithography

    Publication Year: 1983, Page(s):570 - 574
    Cited by:  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (535 KB)

    Resists are radiation-sensitive materials used in the fabrication of integrated circuits (VLSI) for imaging the desired pattern onto the silicon wafer. Most resists in use today consist of polymeric solutions that are spin-coated onto the silicon wafer, exposed in a lithographic tool, developed, and completely removed after the pattern has been transferred to the substrate. This paper presents a h... View full abstract»

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  • Electron-beam systems for precision micron and submicron lithography

    Publication Year: 1983, Page(s):575 - 584
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1030 KB)

    This paper discusses the engineering of electron-beam systems for the generation of micron and submicron lithography. Design objectives and options for the electron-beam column, X-Y workpiece stage, laser interferometer, pattern generator, software, and general engineering are the major topics. View full abstract»

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  • X-ray lithography for VLSI

    Publication Year: 1983, Page(s):585 - 588
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (504 KB)

    In order for any lithography to become the preferred technique for the production of very large scale integrated circuit (VLSI) devices, the technique will have to 1) achieve the required resolution and registration and 2) become more cost effective in this capacity for large volume production than its competitors. The advent of advanced lithographic techniques for LSI production has been postpone... View full abstract»

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  • Advanced submicron research and technology development at the national submicron facility

    Publication Year: 1983, Page(s):589 - 600
    Cited by:  Papers (1)
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    First Page of the Article
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  • Developing a technology base for advanced devices and circuits

    Publication Year: 1983, Page(s):601 - 611
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (6033 KB)

    Lincoln Laboratory is engaged in a wide range of research activities aimed toward the development of a technology base for advanced semiconductor eletronics. This paper is an overview of that research discusses work in the areas of submicrometer lithography and processing, materials growth, circuit testing and restructuring and device research. Specific projects in each of these areas are describe... View full abstract»

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  • MOS and bipolar VLSI technologies using electron-beam lithography

    Publication Year: 1983, Page(s):612 - 639
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (12698 KB)

    Key issues for micrometer and submicrometer MOS and bipolar device fabrication are discussed, including lithography, device and circuit scaling limitations, and process considerations. Lithographic requirements are presented in terms of an overall technology-machine, resist and pattern transfer methods-and an electron-beam alice writing technology is described which satisfies those needs. Viable m... View full abstract»

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  • A systems approach to 1-µm NMOS

    Publication Year: 1983, Page(s):640 - 656
    Cited by:  Papers (11)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (7375 KB)

    In 1977, groups from diverse disciplines at Bell Labs were brought together for the first time, with the goal of applying a systems approach to high-performance NMOS technology. These groups, namely, solid-state physics, device design, materials, processing, and lithography found a symbiotic relationship that has produced not only NMOS devices with unparalleled performance, but also improved mater... View full abstract»

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  • High-speed microelectronics for military applications

    Publication Year: 1983, Page(s):657 - 666
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (2561 KB)

    Future defense systems will require high-speed microcircuits for analog and digital application. This includes digital devices which will operate with 25-MHz system clock, and contain in excess of 4 × 105gates/cm2. Analog devices operating as transmitters, and receivers of signals up to 150 GHz will also be needed. A fundamental requirments for military systems is that t... View full abstract»

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  • GaAs microwave devices and circuits with submicron electron-beam defined features

    Publication Year: 1983, Page(s):667 - 675
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (5212 KB)

    This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography. View full abstract»

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  • New multifield eddy-current effects

    Publication Year: 1983, Page(s):682 - 683
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (971 KB)

    We describe an interesting eddy-current effect which takes place in nonlinear magnetic conductors excited by several alternating fields. The field penetrating into the material contains components of new frequencies which were not present at the excitation on the surface. The phenomenon is significant since the low-frequency fields produced in the material become increasingly emphasized as the fie... View full abstract»

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  • The (151, 136) 10th-power residue code and its performance

    Publication Year: 1983, Page(s):683 - 685
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (354 KB)

    We compute the minimum distance and performance of the (151, 136) 10th-power residue code. The approach taken is to completely enumerate the weight distribution of the (151, 15) dual code and then take advantage of the MacWilliams' identities to obtain the partial weight distribution of the (151, 136) code. View full abstract»

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  • Nondispersive magnetostatic-forward-volume-wave propagation in a double-layered YIG-film structure

    Publication Year: 1983, Page(s):685 - 686
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (244 KB)

    Computed group-delay characteristics are presented illustrating the significant improvement in bandwidth for nondispersive magnetostatic-forward-volume-wave propagation that my be achieved utilizing a double-YIG-film-layered structure over a single-YIG-film geometry. View full abstract»

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  • User's guidebook to digital CMOS integrated circuits

    Publication Year: 1983, Page(s):686 - 687
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  • Bottom interacting ocean acoustics

    Publication Year: 1983, Page(s): 687
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  • An introduction to optical waveguides

    Publication Year: 1983, Page(s):687 - 688
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  • Book alert

    Publication Year: 1983, Page(s): 688
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  • [Back cover]

    Publication Year: 1983, Page(s): c4
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H. Joel Trussell
North Carolina State University