Proceedings of the IEEE

Issue 9 • Sept. 1974

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Displaying Results 1 - 25 of 30
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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    Freely Available from IEEE
  • Frontispiece

    Publication Year: 1974, Page(s): 1187
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    Freely Available from IEEE
  • Scanning the issue

    Publication Year: 1974, Page(s):1188 - 1189
    Cited by:  Papers (1)
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    Freely Available from IEEE
  • Simulation for radiation effects in electronics

    Publication Year: 1974, Page(s):1190 - 1195
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (723 KB)

    Adequate simulation testing for radiation effects requires knowledge of radiation effects mechanisms to relate test environments to operational environments. In order to scale the effect with radiation type, spectrum, or time dependence, the response must be separated into different radiation effects, The basic separation is into displacement, charge-transfer, and ionization effects. Within each c... View full abstract»

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  • Radiation-induced ionization effects in solids—A review of research problems

    Publication Year: 1974, Page(s):1196 - 1207
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1289 KB)

    A brief survey of ionization effects in devices is given, with a special attention to important research problems. This paper is intended not only to indicate the interrelationships between papers presented at the IEEE Annual Conferences on Nuclear and Space Radiation Effects from 1966 to 1973, but also to indicate the gaps left and the future possibilities for work. The environments causing probl... View full abstract»

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  • Defect creation in electronic materials

    Publication Year: 1974, Page(s):1208 - 1214
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (763 KB)

    The status of understanding of defect creation in electronic materials, primarily semiconductors, is reviewed. Included are a survey of threshold values and a discussion of the various parameters on which the energy dependence of damage production depends. The subjects of subthreshold damage and ionization-produced damage are also discussed. View full abstract»

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  • Photon-induced charge transfer and surface emission

    Publication Year: 1974, Page(s):1215 - 1220
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (650 KB)

    Experimental measurements have been made of photon-induced charge transfer between plane-parallel electrodes. X-rays from a pulsed X-ray source were directed at near-normal incidence onto plane-parallel electrodes, and the current which flowed between the electrodes during the X-ray pulse was measured. Quantities obtained include bulk charge transfer in several dielectric materials; forward and re... View full abstract»

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  • Problems in the analysis of semiconductor device materials exposed to ionizing radiation

    Publication Year: 1974, Page(s):1220 - 1223
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (476 KB)

    Enhanced diffusion of impurities in solids at elevated temperatures under exposure to high-energy particles is well known and is largely attributable to the generation of excess vacancies. This paper deals with the morn subtle effects that can be caused by ionizing radiation (below the threshold for atomic displacements) and can occur even at or below room temperature. In recent years, enhancement... View full abstract»

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  • Characterization of silicon metallization systems using energetic ion backscattering

    Publication Year: 1974, Page(s):1224 - 1231
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (842 KB)

    Silicon metallization systems have become increasingly sophisticated in order to tailor contact properties such as adhesion, electrical conductivity, barrier height, and long-term reliability. These contact properties are highly susceptible to solid-solid reactions, typically involving atom migration over distances less than 1 µm. Analysis by monoenergetic ion beam irradiation is a valuable n... View full abstract»

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  • The evaluation of radiation damaged epitaxial silicon

    Publication Year: 1974, Page(s):1232 - 1235
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (418 KB)

    A technique has been developed for the determination of the concentration and Hall mobility of majority carriers in n on p homoepitaxial silicon using micro-Hall samples. These devices are essentially the same size as monolithic integrated circuits, and, since junction isolated integrated circuit processes are used in the manufacture of these samples, they have the properties of as-processed integ... View full abstract»

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  • Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering

    Publication Year: 1974, Page(s):1236 - 1241
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (675 KB)

    The particle bombardment and other effects occurring in plasma systems used to process semiconductor devices have been described and characterized, in particular in the dc and RF diode and dc triode systems commonly used for processing. DC diode systems and RF diode systems are shown to cause degradaztion in processed devices due to energetic particle bombardment, as do de triode systems. In triod... View full abstract»

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  • Ion-implanted semiconductor devices

    Publication Year: 1974, Page(s):1241 - 1255
    Cited by:  Papers (13)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1708 KB)

    Ion implantation is finding increased usage in device fabrication owing to precise control and reproducibility of the charge and depth distribution of the implanted-dopant profile. The MOST illustrates the application of charge control through threshold-voltage adjustment and though predepostion for drive-in diffusion to form complementary devices. A compilation of range-energy data for B, P, and ... View full abstract»

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  • Radiation effects in transit-time microwave diodes

    Publication Year: 1974, Page(s):1256 - 1264
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (968 KB)

    There has been considerable progress in the direct generation of microwave power using two-terminal semiconductor devices during the last decade. Permanent and transient radiation effects on bulk (Gunn and LSA) and junction (IMPATT, TRAPATT, and BARITT) transit-time microwave diodes are reviewed. Emphasis is placed upon relating the primary effects of radiation to the physics of device operation. ... View full abstract»

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  • Radiation effects on semiconductor devices

    Publication Year: 1974, Page(s):1264 - 1273
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1394 KB)

    The radiation-induced degradation of semiconductor material parameters is reviewed. These results are related to the degradation of semiconductor-device performance. Design techniques for minimizing the radiation-induced degradation are evaluated. Emphasis is placed on the effects of neutron-produced displacement damage on devices and on the effects of ionizing radiation on MOS structures. Transie... View full abstract»

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  • Design of a divide-by-N asynchronous odd-number counter with 50/50 duty cycle

    Publication Year: 1974, Page(s):1278 - 1279
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (234 KB)

    Methods of designing an asynchronous divide-by-N odd-number counter with 50/50 duty-cycle output are presented. The counter can be implemented by an EXCLUSIVE OR gate associated with a divide-by-(N + 1)/2 counter and a flip-flop, or by the combination of EXCLUSIVE OR gates and flip-flops. View full abstract»

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  • Acoustooptic tunable filter using TeO2

    Publication Year: 1974, Page(s):1279 - 1280
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (270 KB)

    A new type of acoustooptic tunable filter using noncollinear interaction in TeO2has been fabricated. Dynamic bandwidth of the filter is in the range between 0.42 and 0.75 µm and corresponding acoustic frequency is between 85 and 40 MHz. Efficiency up to 90 percent is obtained at the electrical power input of 50-400 mW and resolution of 12-25 Å is attained experimentally. View full abstract»

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  • A new technique for the preparation of low-loss and graded-index optical fibers

    Publication Year: 1974, Page(s):1280 - 1281
    Cited by:  Papers (93)  |  Patents (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (261 KB)

    The lowest loss optical waveguides to date are those of high silica composition prepared by vapor deposition. The present article describes a method for producing waveguides having a GeO2-SiO2core and SiO2cladding. These combine low loss with relatively large index differences between core and cladding, Large index differences create problems in optical communicati... View full abstract»

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  • Low-loss optical waveguides with pure fused SiO2cores

    Publication Year: 1974, Page(s):1281 - 1282
    Cited by:  Papers (2)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (212 KB)

    Optical waveguide fibers have been produced by a chemical-vapor-deposition technique with optical attenuations as low as 1.1 dB/km at 1.02 µm. The application of this technique to the fabrication of graded index fibers with losses below 2 dB/km is also reported. View full abstract»

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  • Correction to "Review of CW high-power CO2 lasers"

    Publication Year: 1974, Page(s):1282 - 1283
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  • Constitutive relations for a rotating electron plasma

    Publication Year: 1974, Page(s):1283 - 1284
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (188 KB)

    The constitutive relations for small-signal electromagnetic fields propagated in a cylindrical electron plasma rotating around its axis are derived with the use of the electron-theoretical approach. A rotating electron plasma is found to be equivalent to a moving dispersive dielectric with an appropriate dielectric constant, as far as small-signal electromagnetic fields are concerned. View full abstract»

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  • TM-type soliton in nonlinear self-focusing media

    Publication Year: 1974, Page(s):1284 - 1285
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (192 KB)

    A soliton of TM type is shown to exist in nonlinear self-focusing media and its propagation characteristics such as field distributions and propagation constant, are clarified and are compared with a soliton of TE type. View full abstract»

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  • Planar analog transistor

    Publication Year: 1974, Page(s):1285 - 1287
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (500 KB)

    Diffused planar structure of analog transistor is developed using high-resistivity n-type silicon. Experimental characteristic of the device is compared with a conventional theory, and certain apparent discrepancy is qualitatively explained. The obtained unilateral power gain is 8.2 dB at 1 GHz. View full abstract»

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  • Schottky-barrier devices with low barrier height

    Publication Year: 1974, Page(s):1287 - 1288
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (242 KB)

    It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., InxGa1-xAs,InAsyP1-y, and InxGa1-xAsyP View full abstract»

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  • Integral sampling networks

    Publication Year: 1974, Page(s):1288 - 1289
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (218 KB)

    Integral sampling is a technique where the sample is taken over a whole sampling period. This then permits an increased sampling rate. Two integnd samplen am described where RC networks are used as the integrating blocks. View full abstract»

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  • When should smoothing cease?

    Publication Year: 1974, Page(s):1289 - 1290
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (206 KB)

    Error entropy estimation principles are used to analyze the smoothing problem for linear discrete time systems. Using information-theoretic concepts, a smoothing rate upper bound formula is developed which is considerably simpler to use than determining smoothing effectiveness by the optimal mean-square-error smoothing algorithm. View full abstract»

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H. Joel Trussell
North Carolina State University