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Proceedings of the IEEE

Issue 8 • Date Aug. 1967

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Displaying Results 1 - 25 of 79
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Scanning the issue

    Publication Year: 1967, Page(s):1247 - 1248
    Cited by:  Papers (2)
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    Freely Available from IEEE
  • Silicon power device material problems

    Publication Year: 1967, Page(s):1249 - 1271
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5854 KB)

    The limitations imposed on the performance of large-area p-n junction devices by the size and quality of the silicon material are reviewed. It is shown that material quality problems--such as nouniform resistivity, foreign particulate matter, microdefects, dissolved oxygen, and various crystallographic defects--represent real limitations on device performance and yields; however, the effects of pr... View full abstract»

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  • Second breakdown—A comprehensive review

    Publication Year: 1967, Page(s):1272 - 1288
    Cited by:  Papers (70)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2182 KB)

    This paper is a comprehensive review of the published literature dealing with the phenomenon of second breakdown in semiconductor devices and the problems it creates in the design, fabrication, testing, and application of transistors. View full abstract»

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  • Power thyristor rating practices

    Publication Year: 1967, Page(s):1288 - 1301
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1443 KB)

    The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. This paper not only explains the meaning of thyristor temperature, voltage, current, and gate ratings but also presents insights into how these ratings... View full abstract»

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  • The di/dt capability of thyristors

    Publication Year: 1967, Page(s):1301 - 1305
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (460 KB)

    This paper describes an experimental investigation of the di/dt failure mechanism of thyristors. The location of the initial turn-on region and the spread of the "on" region were observed on a specially designed thyristor having many monitoring electrodes. The turn-on process was studied for triggering by gate, by breakover, and by dv/dt. In many cases it was found that turn-on occurred at almost ... View full abstract»

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  • Behavior of thyristors under transient conditions

    Publication Year: 1967, Page(s):1306 - 1311
    Cited by:  Papers (9)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (809 KB)

    The capability of gate-triggered thyristors to withstand steep wavefront, high-current pulses (i.e., di/dt capability) is a function of both junction temperature and frequency of operation. Localized internal heating occurs during turn-on and may lead to thermal runaway. The conditions required for this to occur have been determined by destructively testing many devices. The initial conducting are... View full abstract»

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  • Bidirectional triode thyristor applied voltage rate effect following conduction

    Publication Year: 1967, Page(s):1312 - 1317
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    This paper describes the bidirectional thyristor commutation effect which involves the rate at which off-state voltage can be applied following current flow. This effect is contrasted to the circuit commutated turn-off time effect associated with semiconductor controlled rectifiers. To help describe the commutation effect in bidirectional devices, two common circuit applications are discussed. A t... View full abstract»

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  • p-n-p-n charge dynamics

    Publication Year: 1967, Page(s):1318 - 1330
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1070 KB)

    A simple unified charge model applicable to both unsaturated and saturated p-n-p-n dynamic behavior is analyzed. Expressions are obtained for three important dynamic conditions: di/dt prior to saturation, voltage drop during turn-on, and reverse current during recovery. Comparison with measurement shows that interdigitated gate p-n-p-n devices match one-dimensional turn-on theory and closely appro... View full abstract»

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  • Reverse recovery processes in silicon power rectifiers

    Publication Year: 1967, Page(s):1331 - 1354
    Cited by:  Papers (82)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2158 KB)

    The present review gives an account of a number of investigations that have been recently carried out in the Semiconductor Laboratory Pretzfeld, Siemens AG. The switching processes in power rectifiers from the forward into the reverse state differ greatly from the corresponding process predicted by low-level theory. This result is caused not only by the fact that the conditions are different for h... View full abstract»

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  • Protection of semiconductor devices, circuits, and equipment from voltage transients

    Publication Year: 1967, Page(s):1355 - 1361
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1022 KB)

    In this paper a survey is presented of the means that can be applied to the suppression of voltage transients that can affect the reliability of equipment and systems employing semiconductor devices. Consideration is given to some of the ways transients are generated, their duration and magnitudes, and the approach taken in the military standard MIL-STD-704 in confining the power supply characteri... View full abstract»

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  • Power absorption capability of punch-through devices

    Publication Year: 1967, Page(s):1361 - 1365
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (603 KB)

    The power absorption capability and high-current characteristics of silicon high-voltage punch-through structures were investigated. Impact ionization was observed in the devices using 100- and 75-ohmċcm base material. The transient power absorption capability of these structures was found to be less temperature-dependent than that of avalanche devices. With proper surface contouring, a power... View full abstract»

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  • Graphical analysis of the I-V characteristics of generalized p-n-p-n devices

    Publication Year: 1967, Page(s):1366 - 1374
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (925 KB)

    A new form of the basic equation for the I-V characteristics of a generalized p-n-p-n device is derived. Approximations are then introduced to obtain a simplified basic equation in which all current-dependent terms appear on one side of the equation and all voltage-dependent terms on the other. A graphical technique for solving the simplified device equation is then described and used to develop a... View full abstract»

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  • A theory and some characterisitcs of power transistors at high-level conditions

    Publication Year: 1967, Page(s):1375 - 1383
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    The concentration of injected carriers is large compared with the impurity doping concentration in the base region of a power transistor operating at high level. Carrier concentration and characteristics of a two-dimensional transistor model are calculated for this case. Emitter and base contacts are in the form of strips. Most of the injected emitter current reaches the collector while the remain... View full abstract»

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  • The saturation characteristics of high-voltage transisitors

    Publication Year: 1967, Page(s):1384 - 1388
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (446 KB)

    It is shown that the saturation characteristic of high-voltage NPvN transistors can only be explained by a lowering of the v-layer resistance due to conductivity modulation. A semi-quantitative model is developed which explains this modified saturation region. An experimental method of isolating the resistive portion of the external collector-base (CB) voltage is presented. The results verify that... View full abstract»

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  • The potential and carrier distributions of a p-n-p-n device in the ON state

    Publication Year: 1967, Page(s):1389 - 1400
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1029 KB)

    The potential and carrier distributions of a p-n-p-n device in the ON state are measured by electrical and optical probing techniques. The measurements are compared with numerical calculations of the potential and carrier distributions and the current-voltage characteristics as a function of device temperature. The calculations are based upon an analysis of the p-n-p-n device at high current densi... View full abstract»

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  • The forward characteristics of thyristors

    Publication Year: 1967, Page(s):1400 - 1408
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (671 KB)

    A theory on the forward V-I characteristics of P+-P-N-P-N+thyristors is proposed. Taking the minority carrier lifetime in the base region into account, the effects of the device structures on the forward characteristics are discussed on the following three cases: 1) low-level operation, 2) middle-level operation, and 3) high-level operation. At middle-level operation, the ter... View full abstract»

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  • High-voltage planar p-n junctions

    Publication Year: 1967, Page(s):1409 - 1414
    Cited by:  Papers (52)  |  Patents (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (484 KB)

    A concentric ring junction has been devised to prevent surface breakdown of a planar junction. By properly choosing the spacing between the main junction and the ring, the ring junction acts like a voltage divider at the surface. In addition, the ring junction minimizes the effect of the junction curvature at the periphery of a planar junction. Devices fabricated with three such rings showed break... View full abstract»

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  • High-power pulsed GaAs laser diodes operating at room temperature

    Publication Year: 1967, Page(s):1415 - 1419
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (848 KB)

    The fabrication and characteristics of a high-power GaAs injection laser for room-temperature operation are described. A single laser emits 70 watts peak power from one facet at four times the threshold current. The diodes are fabricated from epitaxial wafers prepared by the solution-growth process. Scaling from work on low-power (7-watt) units to this high power has been accomplished by increasin... View full abstract»

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  • Coherent amplification characteristics of a GaAs phased array

    Publication Year: 1967, Page(s):1420 - 1425
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1349 KB)

    The coherent amplification properties of antireflective coated GaAs diodes are considered for application to a phased array amplification scheme. The developmemt and design characteristics of a ten-element array system are discussed. An experimental diode array possessing good electrical and spectral match among diodes and excellent thermal dissipation is shown to provide optical gains, for main m... View full abstract»

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  • Correction to "Requirements on master oscillators for coherent radar"

    Publication Year: 1967, Page(s): 1425
    Cited by:  Papers (1)
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  • Consumer applications of power semiconductors

    Publication Year: 1967, Page(s):1426 - 1434
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (986 KB)

    Power semiconductors--transistors, thyristors, and rectifiers --all have found widespread application in the three major consumer markets --automotive, entertainment, appliance. These devices have been developed to provide low-cost solutions to existing needs. In the mid-1950's, the germanium power transistor, as used in hybrid auto radio sets, was the sole power semiconductor represented in a con... View full abstract»

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  • Flat packaged thyristor assembly for high-voltage application

    Publication Year: 1967, Page(s):1434 - 1440
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1152 KB)

    Applications for high-power thyristors continue to increase at an accelerated pace. The circuit designer (user) and device designer (producer) have attained a high degree of maturity in their respective areas of interest and in the joint effort of mating the device to this application for optimum performance. It is the purpose of this paper to describe and analyze recent developments in the device... View full abstract»

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  • Use of power semiconductors to control locomotive traction motors in the French national railways

    Publication Year: 1967, Page(s):1441 - 1448
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (595 KB)

    The application of semiconductor rectifiers and thyristors in the control of power to ac, dc, and diesel powered locomotives in the French National Railways is presented. A total of 260 locomotives have been equipped with 60 000 semiconductor rectifiers since 1959. The failure rate of these rectifiers has been 0.12 percent or 1.35 percent for every million kilometers traveled. Four locomotives hav... View full abstract»

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  • Oscillator-circuit thyristor converters for induction heating

    Publication Year: 1967, Page(s):1449 - 1453
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (957 KB)

    For the induction heating of metals it is advisable in many cases to use higher frequencies. So far, the input required has been supplied by rotary converters or high-vacuum tubes. Recently, static converters with thyristors have also been employed. Equipment already installed is described, and details are given on the considerations leading to the solution adopted. View full abstract»

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North Carolina State University