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Proceedings of the IEEE

Issue 12 • Dec. 1964

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Displaying Results 1 - 25 of 95
  • [Front cover and table of contents]

    Publication Year: 1964, Page(s): c1
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    Freely Available from IEEE
  • Scanning the issue

    Publication Year: 1964, Page(s): 1393
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    Freely Available from IEEE
  • Frontispiece

    Publication Year: 1964, Page(s): 1394
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    Freely Available from IEEE
  • Poles and zeros: Preface to the integrated electronics issue

    Publication Year: 1964, Page(s):1395 - 1399
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  • Integrated electronics—A perspective

    Publication Year: 1964, Page(s):1400 - 1405
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (964 KB)

    Integrated electronics promises to increase both the rate of change within the electronics industry and the pervasiveness of electronics as a whole, making it possible to remove very fundamental and interrelated limitations to applying the knowledge and tools of electronics, the most harassing of which have been reliability, cost, complexity, and that imposed by the specialized character of and re... View full abstract»

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  • Integrated electronics in defense systems

    Publication Year: 1964, Page(s):1405 - 1411
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (788 KB)

    The role played by the Department of Defense in the early development of integrated electronics is discussed and the current status of military application is summarized. The potential advantages of the new technology to military systems are outlined. These include improved reliability, savings in cost, improved maintenance and logistics supply, enhanced system effectiveness, design flexibility, s... View full abstract»

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  • Integrated electronics development in the United Kingdom and Western Europe

    Publication Year: 1964, Page(s):1412 - 1425
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1446 KB)

    The populations of Europe and the U. S. are compared and the general electronics position in Western Europe is surveyed briefly. Two maps illustrate the location and number of organizations engaged in research, development, and production of integrated circuits in the United Kingdom and Western Europe. Some early British work is summarized, and details are given of the present position in thin-fil... View full abstract»

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  • Integrated electronics vs electrical engineering education

    Publication Year: 1964, Page(s):1425 - 1429
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (492 KB)

    This paper is based on a survey which was made of representatives of industrial organizations, and which was intended to show potential changes in electrical-engineering skills required as a result of the impact of integrated electronics. The most significant result of the survey was a predicted shift in emphasis from circuits engineering toward systems engineering. Comments received during the su... View full abstract»

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  • Semiconductor-network technology—1964

    Publication Year: 1964, Page(s):1430 - 1444
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2325 KB)

    Technology peculiar to the fabrication of monolithic, semiconductor-network, integrated circuits is discussed. In particular, the status of diffusion, epitaxy, photo processing, thin films, and thick films are discussed. The problem of component isolation is considered separately as a particular application of these technologies. The discussion is primarily qualitative and is designed to acquaint ... View full abstract»

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  • The surface and Microminiaturization

    Publication Year: 1964, Page(s):1444 - 1447
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (403 KB)

    The reduction in size of miniature devices which depend, for their operation, upon the volume properties of the material is severely limited by the increase in the surface to volume ratio. After a certain critical size is reached, the surface properties of the material may begin to play a dominant role. Various effects which may occur are discussed and a number of examples are cited. It is suggest... View full abstract»

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  • Integrated complementary devices fabricated by electrochemical techniques

    Publication Year: 1964, Page(s):1447 - 1450
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (778 KB)

    Various circuit advantages accrue from the use of complementary device structures; actual or potential improvements in size, cost, and reliability accrue from the use of integrated circuits. An amalgam of these advantages has so far been inhibited, however, by the lack of practical techniques for producing essentially identical diffusion profiles of n- and p-type dopants in different regions of th... View full abstract»

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  • Tantalum-film technology

    Publication Year: 1964, Page(s):1450 - 1462
    Cited by:  Papers (33)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1851 KB)

    In tantalum film circuitry, capacitors, resistors, and rudimentary interconnections are all produced in a single pattern of tantalum. Important processes are discussed in detail including 1) sputtering, by which tantalum films are produced, 2) pattern generation, and 3) anodization, by which capacitor dielectrics are formed and by which resistors are protected and adjusted to value. Predominantly ... View full abstract»

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  • Titanium-dioxide dielectric films prepared by vapor reaction

    Publication Year: 1964, Page(s):1463 - 1465
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (326 KB)

    The high dielectric constant of TiO2and its low sensitivity to temperature and frequency make TiO2attractive for integrated electronic applications. The most useful technique for preparing titanium-dioxide films on semiconductors and metals is the vapor reaction process. The apparatus developed for film preparation is described, and effects of deposition conditions are discus... View full abstract»

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  • Plasma-anodized thin-film capacitors for integrated circuits

    Publication Year: 1964, Page(s):1465 - 1468
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (372 KB)

    This paper presents the characteristics of Al2O3capacitors formed by the relatively new technique of gaseous plasma anodization. This process can be incorporated into a thin-film deposition process cycle thereby providing the advantage of minimizing contamination possibilities. The formation technique is briefly described and device properties are presented in detail. View full abstract»

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  • The stability of glazed silicon surfaces to water attack

    Publication Year: 1964, Page(s):1468 - 1471
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (354 KB)

    IBM has developed a glassing technology for the passivation of transistors and diodes. For effective surface protection, the glass should have long-term stability to ambient attack, particularly moisture attack. Since it is difficult to evaluate all glasses under moderate moisture conditions for extended periods, several accelerated tests for determining the stability of glasses to water and humid... View full abstract»

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  • Mask automation, film fabrication, and design automation in the BuWeps/NAFI thin-film technology

    Publication Year: 1964, Page(s):1472 - 1475
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    The development of thin-film circuitry and the urgent need for thin-film circuits in military and space applications has created a demand for improved manufacturing techniques in the tooling and fabrication of vacuum-deposited circuits. This paper describes how numerical control and automation offer a simple and economical approach to obtain consistent and repeatable results, and presents an analy... View full abstract»

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  • The multipurpose integrated electronic processor

    Publication Year: 1964, Page(s):1475 - 1478
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (691 KB)

    At the University of Ottawa, a Multipurpose Integrated Electronic Processor (MIEP) is being built for basic research in integrated electronics and its related fields. When completed, the MIEP will permit controlled deposition of thin films, electron-beam micromachining, topological inspection and chemical analysis of the films. These processes will be achieved without the need of moving the substr... View full abstract»

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  • Integrated circuits incorporating thin-film active and passive elements

    Publication Year: 1964, Page(s):1479 - 1486
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2461 KB)

    The thin-film field-effect transistor (TFT) provides the active element for complex integrated circuits deposited upon an insulating substrate. N-type transistors are obtained with evaporated layers of cadmium sulfide or selenide and p-type transistors with evaporated tellurium. Switching speeds of less than 4 nsec and gain-bandwidth products of greater than 30 Mc are observed with polycrystalline... View full abstract»

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  • Grown-film silicon transistors on sapphire

    Publication Year: 1964, Page(s):1487 - 1490
    Cited by:  Papers (43)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2249 KB)

    A method was developed for depositing silicon films by the pyrolytic decomposition of SiH4on single crystal sapphire. Electron diffraction and Laue reflection examinations of the films shows single-crystal patterns. The silicon film has a Hall mobility of 135 cm2/volt-second at a hole density of 1017/cm3. Insulated-gate field-effect transistors with a tr... View full abstract»

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  • Lateral complementary transistor structure for the simultaneous fabrication of functional blocks

    Publication Year: 1964, Page(s):1491 - 1495
    Cited by:  Papers (22)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1268 KB)

    Heretofore, the schemes for fabricating a complementary transistor structure in a monolithic functional block entailed either some additional, difficult-to-control processing steps or a sacrifice in isolation of the collector regions of one type of transistor. This paper describes an isolated p-n-p transistor structure fabricated by the same technique used for the conventional all n-p-n transistor... View full abstract»

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  • Thermal techniques as applied to functional electronic blocks

    Publication Year: 1964, Page(s):1496 - 1501
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (501 KB)

    Relationships governing thermal-electrical interactions between components on a common substrate are developed. Performance characteristics are related to design calculations for several functional electronic blocks which are dependent upon thermal-electrical interactions. These FEB's include LF filters and oscillators, a video amplifier and a temperature-stabilized substrate. The time constants r... View full abstract»

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  • Gridistor—A new field-effect device

    Publication Year: 1964, Page(s):1502 - 1513
    Cited by:  Papers (20)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3705 KB)

    This article concerns a new category of field effect transistors currently being developed which are derived from the Tecnetron (known as the Fieldtron in the U.S.A.) and which use the principal of centripetal striction and have a multichannel structure. By this development it is intended that the advantages of bipolar and field effect transistors be combined insofar as this is possible. In the th... View full abstract»

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  • The scanistor—A solid-state image scanner

    Publication Year: 1964, Page(s):1513 - 1528
    Cited by:  Papers (35)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1425 KB)

    Scanistors form a new class of semiconducting devices which perform image scanning or dissection by reason of a novel electronic method of commutating a single output terminal to any preselected illuminated portion of the device. The selection is uniquely determined by a voltage applied across two terminals of the device. The present investigation is concerned with a strip-shaped unit called the m... View full abstract»

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  • Optoelectronics as applied to functional electronic blocks

    Publication Year: 1964, Page(s):1529 - 1536
    Cited by:  Papers (8)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (802 KB)

    The combination of a GaAs light source and a silicon photodetector in a Functional Electronic Block (FEB) provides signal coupling with electrical isolation. Circuit functions not previously available in microelectronic form can be realized with optical coupling. The characteristics of the GaAs light source, the silicon photodetector and optical coupling techniques of importance in FEB design are ... View full abstract»

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  • Cost-size optima of monolithic integrated circuits

    Publication Year: 1964, Page(s):1537 - 1545
    Cited by:  Papers (248)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (794 KB)

    A generalized cost-size relationship is derived for a monolithic circuit consisting of N identical components, taking into account variations in component density, yield, and assembly costs with N. It is intended to reveal cost trends rather than give accurate results for specific cases and deals only with fabrication costs. A yield-area relationship is used which takes into account chip-to-chip v... View full abstract»

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H. Joel Trussell
North Carolina State University