Proceedings of the IEEE

Issue 8 • Aug 1991

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Displaying Results 1 - 9 of 9
  • Resonant tunneling quantum-dot diodes: physics, limitations, and technological prospects

    Publication Year: 1991, Page(s):1117 - 1130
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1328 KB)

    The authors discuss the electronic structure and properties of the present generation of resonant-tunneling quantum-dot structures. Quantum dots are zero-dimensional semiconductor nanostructures, i.e., structures in which an electron is quantum-mechanically confined in all three spatial dimensions. Quantum dots appear to represent a viable structure to allow the continued downscaling of critical c... View full abstract»

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  • Quantum interference effects in semiconductors: a bibliography

    Publication Year: 1991, Page(s):1159 - 1180
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (2644 KB)

    The bibliography has been compiled as an introduction and study guide to this field. The papers listed describe the extensive theoretical and experimental results that have been obtained on quantum interference effects and discuss possible application areas. Works of a fundamental nature concerning phenomena that are basic to all semiconductor behavior have not been included. Articles on the prope... View full abstract»

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  • Quantum mechanical aspects of transport in nanoelectronics

    Publication Year: 1991, Page(s):1188 - 1207
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1864 KB)

    The authors discuss some of the effects quantum mechanics has on the performance of nanometer-scale devices. At low temperature, the confinement and the coherence of the electronic motion on the scale of the electron wavelength give rise to gross deviations from classical charge transport that describes the resistance found in large conventional devices. The authors examine three examples of the q... View full abstract»

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  • Quantum phenomena in field-effect-controlled semiconductor nanostructures

    Publication Year: 1991, Page(s):1106 - 1116
    Cited by:  Papers (11)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (956 KB)

    Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include grating-gate lateral surface superlattices. (LSSLs), grid-gate LSSLs, planar-resonant-tunneling field... View full abstract»

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  • Nanostructure patterning

    Publication Year: 1991, Page(s):1149 - 1158
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (972 KB)

    Research at the US Naval Research Laboratory (NRL) in the lithography, patterning, and fabrication of structures of nanometer scale dimensions is reviewed. Electron-beam (e-beam) lithography at high (50 keV) and low (5 eV) energies on resist systems developed at NRL is described. The low energy lithography takes advantage of the spatially confined e-beam available in a scanning tunneling microscop... View full abstract»

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  • Lateral resonant tunneling transistors employing field-induced quantum wells and barriers

    Publication Year: 1991, Page(s):1131 - 1139
    Cited by:  Papers (11)  |  Patents (13)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (748 KB)

    The authors describe some preliminary experimental results of quantum-effect modulation-doped field-effect transistors (MODFETs) with a variety of nanometer gate geometries. The gate geometries were such that various quantum wells and barriers were formed in the channel of the MODFETs through the field effect imposed by the novel gate structures, and the transport of the electrons was affected by ... View full abstract»

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  • Semiconductor science: the fourth generation

    Publication Year: 1991, Page(s):1181 - 1187
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (576 KB)

    The author reviews work on quantum wires and quantum dots in the context of a generational framework. The first generation centered on the quantum physics of solids. The second generation saw the commercial and technical application of these new physical concepts. The third generation yielded the creation of man-made quantum systems and low-dimensional systems: inversion layers and quantum wells, ... View full abstract»

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  • Limits of nano-gate fabrication

    Publication Year: 1991, Page(s):1093 - 1105
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1296 KB)

    The authors review the limits of nanometer-scale gate electrode (nano-gate) fabrication. The technology to fabricate nano-gates has become increasingly important in recent years as the scaling limits of conventional electronic devices and the quantum effects of novel devices are investigated. Consistent with the technology used to fabricate virtually all of the smallest devices to date, the emphas... View full abstract»

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  • Nanostructure fabrication

    Publication Year: 1991, Page(s):1140 - 1148
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (776 KB)

    Quantum transport effects have been explored in semiconductors using a two-dimensional electron gas confined by lateral nanostructures. Once the lateral sizes and the layer thickness are reduced to be smaller than the phase coherence length of the electrons in the material, quantum effects become pronounced; it is this aspect of nanofabrication that is considered. The structures defined by a numbe... View full abstract»

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North Carolina State University