Issue 12 • Date Dec. 2004
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Displaying Results 1 - 25 of 29
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Table of contents
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PDF (50 KB)
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IEEE Electron Device Letters publication information
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PDF (63 KB)
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Editorial kudos to our reviewers
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PDF (19 KB)
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The Golden List
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PDF (51 KB)
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Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology
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PDF (384 KB)
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Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs
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PDF (200 KB)
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Low-frequency noise measurement-based reliability testing of VLSI interconnects with different geometry
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PDF (94 KB)
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HfO2 MIS capacitor with copper gate electrode
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PDF (136 KB)
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Integrated tunable magnetic RF inductor
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PDF (304 KB)
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800 V 4H-SiC RESURF-type lateral JFETs
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PDF (216 KB)
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An elastically stretchable TFT circuit
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PDF (304 KB)
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Investigation of maximum current sensing window for two-side operation, four-bit/cell MLC nitride-trapping nonvolatile flash memories
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PDF (152 KB)
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Schottky-barrier source/drain MOSFETs on ultrathin SOI body with a tungsten metallic midgap gate
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PDF (360 KB)
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Impact ionization in thin silicon diodes
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PDF (144 KB)
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Body effect in tri- and pi-gate SOI MOSFETs
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PDF (304 KB)
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A transient analysis method to characterize the trap vertical location in nitride-trapping devices
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PDF (152 KB)
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Extending two-element capacitance extraction method toward ultraleaky gate oxides using a short-channel length
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PDF (144 KB)
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IEEE Electron Devices Society meetings calendar for 2004 (as of 04 November 2004)
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PDF (325 KB)
Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


