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Proceedings of the IEEE

Issue 11 • Nov 1988

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Displaying Results 1 - 8 of 8
  • Radiation testing of semiconductor devices for space electronics

    Publication Year: 1988, Page(s):1510 - 1526
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1624 KB)

    Radiation effects testing, part selection, and hardness assurance for application to electronic components in the natural space environment are discussed. The emphasis is on semiconductor devices, primarily silicon microcircuits, which are used in the greatest quantity and which, in most cases, are the most sensitive. After a summary of the natural space radiation environment and the effects of ra... View full abstract»

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  • The design of radiation-hardened ICs for space: a compendium of approaches

    Publication Year: 1988, Page(s):1470 - 1509
    Cited by:  Papers (60)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3652 KB)

    Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these eff... View full abstract»

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  • Virtual address cache with no reverse address buffering

    Publication Year: 1988, Page(s):1538 - 1540
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    A virtual address cache memory, whose operation is controlled explicitly by software, is presented. Ad hoc hardware mechanisms, including machine instructions and an operand addressing mode, reduce the complexity of cache management logic in favor of the capacity of the cache, and solve the major problem of virtual address cache organization: two or more virtual addresses mapping into the same rea... View full abstract»

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  • Radiation effects on microelectronics in space

    Publication Year: 1988, Page(s):1443 - 1469
    Cited by:  Papers (95)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2496 KB)

    The basic mechanisms of space radiation effects on microelectronics are reviewed. Topics discussed include the effects of displacement damage and ionizing radiation on devices and circuits, single-event phenomena, dose enhancement, radiation effects on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment. A summary of damage mechani... View full abstract»

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  • Capacitance of semiconductor p-n junction space-charge layers: an overview

    Publication Year: 1988, Page(s):1406 - 1422
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1244 KB)

    The modeling of capacitance of p-n junction space-charge layers in semiconductor devices is discussed. First, previously developed models and methods are reviewed. Capacitance models developed recently by the authors that include mobile-carrier, nonquasi static, and multidimensional effects are then considered. These models yield more accurate device and circuit simulations for semiconductor integ... View full abstract»

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  • Spacecraft electronics design for radiation tolerance

    Publication Year: 1988, Page(s):1527 - 1537
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1116 KB)

    Current design practices are described and future trends in spacecraft electronics which are likely to alter traditional approaches are discussed. A summary of radiation effects and radiation tolerance requirements typically levied on spacecraft designs is provided. Methods of dealing with radiation and testability issues are considered View full abstract»

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  • Comments on `The measurement of the properties of materials' by M.N. Afsar et al

    Publication Year: 1988
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (60 KB)

    It is pointed out that the references cited in a previous paper (ibid., vol.75, no.1 p.183-99, 1986) do not support the argument that the optimum thickness of the sample should be an integral number of half-wavelengths thick View full abstract»

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  • The space radiation environment for electronics

    Publication Year: 1988, Page(s):1423 - 1442
    Cited by:  Papers (116)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1440 KB)

    The Earth's space radiation environment is described in terms of charged particles as relevant to effects on spacecraft electronics. The nature and magnitude of the trapped and transiting environments are described in terms of spatial distribution and temporal variation. The internal radiation environment of the spacecraft is described in terms of shielding the high-energy particles of the free-fi... View full abstract»

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North Carolina State University