Electron Devices, IEEE Transactions on
Issue 9 • Date Sept. 2004
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Displaying Results 1 - 25 of 35
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Table of contents
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PDF (51 KB)
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IEEE Transactions on Electron Devices publication information
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PDF (65 KB)
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Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs
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PDF (608 KB)
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SODEL FET: novel channel and source/drain profile engineering schemes by selective Si epitaxial growth technology
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PDF (544 KB)
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The effect of LAC doping on deep submicrometer transistor capacitances and its influence on device RF performance
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PDF (568 KB)
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An advanced no-snapback LDMOSFET with optimized breakdown characteristics of drain n-n+ diodes
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PDF (1192 KB)
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A new weight redistribution technique for electron-electron scattering in the MC simulation
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PDF (576 KB)
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Testing and diagnostics of CMOS circuits using light emission from off-state leakage current
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PDF (1224 KB)
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Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET
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PDF (352 KB)
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Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs
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PDF (624 KB)
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Compact modeling of the noise of a bipolar transistor under DC and AC current crowding conditions
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PDF (392 KB)
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Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement
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PDF (664 KB)
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High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection
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PDF (520 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
