Issue 8 • Date Aug. 2004
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Table of contents
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PDF (51 KB)
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IEEE Transactions on Electron Devices publication information
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PDF (64 KB)
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Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded InxGa1-xP metamorphic buffer
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PDF (568 KB)
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A robust all-wet-etching process for mesa formation of InGaAs-InP HBT featuring high uniformity and high reproducibility
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PDF (808 KB)
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The effect of the discharge aging process on the surface state of MgO film in AC PDPs
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PDF (624 KB)
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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
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PDF (1008 KB)
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Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress
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PDF (944 KB)
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Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs
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PDF (472 KB)
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Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks
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PDF (608 KB)
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Moving current filaments in integrated DMOS transistors under short-duration current stress
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PDF (2000 KB)
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Discrete-time simulation model for 1/f noise
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PDF (376 KB)
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Slow transients in polyimide-passivated InP-InGaAs HBTs: effects of UV irradiation, thermal annealing and electrical stress
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PDF (200 KB)
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Special issue on integrated circuit technologies for RF circuit applications
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PDF (108 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


