Issue 4 • Date April 2004
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Table of contents
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PDF (49 KB)
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IEEE Transactions on Electron Devices publication information
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PDF (43 KB)
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Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
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PDF (232 KB)
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Direct tunneling-induced floating-body effect in 90-nm pseudo-kink-free PD SOI pMOSFETs with DTMOS-like behavior and low input power consumption
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PDF (552 KB)
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The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs
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PDF (248 KB)
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A compact threshold voltage model for gate misalignment effect of DG FD SOI nMOS devices considering fringing electric field effects
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PDF (416 KB)
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A novel MONOS-type nonvolatile memory using high-κ dielectrics for improved data retention and programming speed
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PDF (344 KB)
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Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications
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PDF (464 KB)
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Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss high-voltage IGBTs
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PDF (304 KB)
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Efficient improvement of hot carrier-induced degradation for 0.1-μm indium-halo nMOSFET
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PDF (232 KB)
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A simple method to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors
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PDF (248 KB)
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IEEE 2004 International Integrated Reliability Workshop
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PDF (561 KB)
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IEEE International Semiconductor Conference
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PDF (148 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


