Issue 3 • Date March 2004
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Table of contents
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PDF (52 KB)
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IEEE Transactions on Electron Devices publication information
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Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN
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GaAs-MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces
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Design and fabrication of deep submicron CMOS technology compatible suspended high-Q spiral inductors
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Compact analytical physical-based model of LTPS TFT for active matrix displays addressing circuits simulation and design
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PDF (528 KB)
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Improvement of dark current using InP/InGaAsP transition layer in large-area InGaAs MSM photodetectors
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PDF (296 KB)
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An analytical model for electron transport and luminance in SrS:Cu,Ag ACTFEL display devices
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PDF (288 KB)
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An iterative method for computing carrier distribution in 2-D carrier controlled optical guides
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On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field
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Selective vapor-liquid-solid epitaxial growth of micro-Si probe electrode arrays with on-chip MOSFETs on Si (111) substrates
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PDF (440 KB)
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Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
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Investigation of channel hot electron injection by localized charge-trapping nonvolatile memory devices
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PDF (496 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


