Issue 2 • Date Feb. 2004
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Displaying Results 1 - 25 of 28
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Table of contents
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PDF (48 KB)
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IEEE Electron Devices Society Information
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PDF (43 KB)
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Low damage, Cl2-based gate recess etching for 0.3-μm gate-length AlGaN/GaN HEMT fabrication
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PDF (168 KB)
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Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions
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PDF (136 KB)
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Extraction of material parameters in film bulk acoustic resonator (FBAR) using genetic algorithm
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PDF (160 KB)
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Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs
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PDF (200 KB)
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High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
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PDF (192 KB)
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Modeling for the 2nd-bit effect of a nitride-based trapping storage flash EEPROM cell under two-bit operation
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PDF (136 KB)
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Minimized constrains for lateral profiling of hot-carrier-induced oxide charge and interface traps in MOSFETs
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PDF (168 KB)
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Optical subthreshold current method for extracting the interface states in MOS systems
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PDF (232 KB)
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IEEE Electron Devices Society meeting calendar for 2004
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PDF (514 KB)
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IEEE Electron Device Letters Information for authors
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PDF (37 KB)
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IEEE Transactions on Device and Material Reliability on "Nonvolatile Memory Reliability"
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PDF (92 KB)
Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


