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Circuits and Devices Magazine, IEEE

Issue 1 • Date Jan-Feb 2004

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Displaying Results 1 - 16 of 16
  • Creative thinking - reflection as a catalyst in triggering creativity in engineering education

    Publication Year: 2004 , Page(s): 52 - 62
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (747 KB) |  | HTML iconHTML  

    This article constitutes an effort to gain insights into the nature of creativity and its mechanisms leading to creative solutions to problems. This article claims that reflection constitutes the underlying mechanism, serving as a catalyst for creativity. A total of five experiments is presented, incurred in industrial and academic research environments and pedagogical settings, that demonstrate the occurrence of creativity, deliberately triggered by reflection. The key contribution of this article is that, although the exact definition of creativity continues to elude us, two mechanisms have been uncovered that are potentially useful in triggering creativity, at will, in ordinary scientific and engineering personnel to achieve quantum leaps in our knowledge and achievement. Reflection plays a key, catalytic role in both of these mechanisms and also appears to underlie the inner workings of Nature. View full abstract»

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  • Scaling planar silicon devices

    Publication Year: 2004 , Page(s): 6 - 19
    Cited by:  Papers (18)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1753 KB) |  | HTML iconHTML  

    The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime. View full abstract»

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  • Turning silicon on its edge [double gate CMOS/FinFET technology]

    Publication Year: 2004 , Page(s): 20 - 31
    Cited by:  Papers (104)  |  Patents (48)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1815 KB) |  | HTML iconHTML  

    Double-gate devices will enable the continuation of CMOS scaling after conventional scaling has stalled. DGCMOS/FinFET technology offers a tactical solution to the gate dielectric barrier and a strategic path for silicon scaling to the point where only atomic fluctuations halt further progress. The conventional nature of the processes required to fabricate these structures has enabled rapid experimental progress in just a few years. Fully integrated CMOS circuits have been demonstrated in a 180 nm foundry-compatible process, and methods for mapping conventional, planar CMOS product designs to FinFET have been developed. For both low-power and high-performance applications, DGCMOS-FinFET offers a most promising direction for continued progress in VLSI. View full abstract»

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  • IEEE Circuits & Devices Magazine Society Info

    Publication Year: 2004 , Page(s): 0_2
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  • Designer~s interface vlsi

    Publication Year: 2004 , Page(s): 3 - 4
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  • Beyond the silicon roadmap [silicon laser cooling]

    Publication Year: 2004 , Page(s): 32 - 37
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (825 KB) |  | HTML iconHTML  

    We have first developed an all-solid-state 252 nm coherent light source for laser cooling of silicon atoms. This can give an impetus to research into the manipulation of the atomic motion of silicon atoms toward nanoprocess applications. Therefore, we developed an experimental setup for silicon atom manipulation. It was found that a high-quality silicon atomic beam, useful for nanoprocess applications, is obtainable with manipulation using the coherent light source in the system. With this unique apparatus, we continue the challenge to demonstrate the spatial design of nuclear spins of the family of isotopes with laser cooling of Si. View full abstract»

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  • Nanotechnology: the future is now [Taiwan R&D initiatives]

    Publication Year: 2004 , Page(s): 44 - 51
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (882 KB) |  | HTML iconHTML  

    As a small economy that has built its future on manufacturing excellence, Taiwan has a big stake in nanotechnology. On the one hand, our manufacturing strength makes nanotechnology a unique opportunity. On the other, it also makes nanotechnology the one R&D battle we can least afford to lose. To come out ahead takes coherent planning and disciplined actions and, above all, the ability to marry nanotechnology's creative power to the dynamics of the marketplace. Such will be the challenges facing Taiwan's National Nanotechnology Program and its central R&D force-ITRI. For us, the future is literally now. View full abstract»

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  • Research Perspectives on Dynamic Translinear and Log-Domain Circuits [Book Review]

    Publication Year: 2004 , Page(s): 63
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (181 KB)  

    First Page of the Article
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  • Space Divison Multiple Access for Wireless Local Area Networks [Book Review]

    Publication Year: 2004 , Page(s): 5 - 63
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (212 KB) |  | HTML iconHTML  

    First Page of the Article
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  • Computational Single Electronics [Book Review]

    Publication Year: 2004 , Page(s): 5
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (182 KB) |  | HTML iconHTML  

    First Page of the Article
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  • It's all about speed

    Publication Year: 2004 , Page(s): 38 - 43
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (606 KB) |  | HTML iconHTML  

    The authors discuss techniques for increasing the speed of interconnects by using steerable lasers for free-space optical communications. View full abstract»

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  • IEEE Circuits & Devices Magazine

    Publication Year: 2004 , Page(s): 0_1
    Save to Project icon | Request Permissions | PDF file iconPDF (1071 KB)  
    Freely Available from IEEE
  • IEEE Circuits & Devices Magazine Table of contents

    Publication Year: 2004 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (222 KB)  
    Freely Available from IEEE
  • A new contest for a new year [From the Editor]

    Publication Year: 2004 , Page(s): 2
    Save to Project icon | Request Permissions | PDF file iconPDF (274 KB) |  | HTML iconHTML  
    Freely Available from IEEE
  • Conference Calendar

    Publication Year: 2004 , Page(s): 64
    Save to Project icon | Request Permissions | PDF file iconPDF (188 KB)  
    Freely Available from IEEE
  • Brain teaser challenge

    Publication Year: 2004 , Page(s): 65
    Save to Project icon | Request Permissions | PDF file iconPDF (227 KB) |  | HTML iconHTML  
    Freely Available from IEEE

Aims & Scope

IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org