Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Quantum Electronics, IEEE Journal of

Issue 1 • Date Jan. 2004

Filter Results

Displaying Results 1 - 17 of 17
  • Table of contents

    Publication Year: 2004 , Page(s): 0_1
    Save to Project icon | Request Permissions | PDF file iconPDF (33 KB)  
    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics Society Information

    Publication Year: 2004 , Page(s): 0_2
    Save to Project icon | Request Permissions | PDF file iconPDF (37 KB)  
    Freely Available from IEEE
  • Spatial coherence and thermal lensing in broad-area semiconductor lasers

    Publication Year: 2004 , Page(s): 1 - 9
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (608 KB)  

    Injection profiled broad-area edge-emitting semiconductor lasers demonstrate single transverse mode operation and near-diffraction-limited beam output when driven by pulsed pump current. Thermal effects arising from CW operation induce filamentary dynamics, thus degrading the beam. Transition from the stable nonthermal to the unstable CW regime is analyzed experimentally and numerically, and techniques to improve beam quality in the thermal regime, based on feedback or thermal profiling, are proposed. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Reflectivity measurements of intracavity defects in laser diodes

    Publication Year: 2004 , Page(s): 10 - 17
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (448 KB) |  | HTML iconHTML  

    A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis of transverse mode competition of VCSELs based on a spatially independent model

    Publication Year: 2004 , Page(s): 18 - 24
    Cited by:  Papers (21)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB) |  | HTML iconHTML  

    A spatially independent model of vertical-cavity surface-emitting lasers (VCSELs) is built up in this paper by integrating the spatially dependent rate equations over the cross section of the active region of a VCSEL. The transverse modal structure is presented and discussed. This model is simulated numerically with the fourth-order Runge-Kutta method in a self-consistent way. Different kinds of injection currents such as a disk-contact and a ring-contact of injection current with different current parameters are employed in the investigations. The dependencies of the transverse mode competition on the current intensity, the current spread, and the geometrical parameters of the injection contact forms are thoroughly investigated and analyzed. The results are useful to design and control the transverse modal profile of a VCSEL. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Numerical study of optical injection dynamics of vertical-cavity surface-emitting lasers

    Publication Year: 2004 , Page(s): 25 - 30
    Cited by:  Papers (14)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB) |  | HTML iconHTML  

    We study numerically the transverse-mode dynamics of a vertical-cavity surface-emitting laser with external optical injection. We consider the case in which two transverse modes with parallel polarizations are exited. Varying the strength and frequency of the injected field, we find a rich variety of complex behaviors. We show that by increasing the optical injection strength the laser does not turn into a single-mode laser, as would be expected if the transverse modes have perpendicular polarizations. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Theoretical analysis of wavelength conversion based on four-wave mixing in light-holding SOAs

    Publication Year: 2004 , Page(s): 31 - 40
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (600 KB) |  | HTML iconHTML  

    We propose to use an additional injection beam of short wavelength to enhance the wavelength conversion that utilizes the four-wave-mixing (FWM) effect in a semiconductor optical amplifier (SOA). With this scheme, the assist light can increase the saturation intensity without sacrificing the gain of an SOA, and this leads to an increase in conversion efficiency. A numerical method dealing with various FWM mechanisms, such as amplified spontaneous emission (ASE) noise, longitudinal spatial hole burning, and wavelength-dependent gain spectrum, is developed to predict the static characteristics of our scheme. The carrier densities are nonuniformly distributed along the longitudinal direction of the SOA as a result of the ASE effect, which affects the measurement of the wavelength-dependent transparent current. The effects of an assist light on saturation output power and conversion efficiency are analyzed in detail. The analysis shows that using an assist light can improve both the conversion efficiency and signal-to-background-noise ratio (SBR) for SOAs of different lengths. The degree of improvement depends on the bias condition, assist light wavelength, and the device geometry. The study for the device optimization reveals that a compromise between conversion efficiency and SBR must be made to choose the device length. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Quantum noise of actively mode-locked lasers with dispersion and amplitude/phase modulation

    Publication Year: 2004 , Page(s): 41 - 56
    Cited by:  Papers (15)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (504 KB) |  | HTML iconHTML  

    A quantum theory for the noise of optical pulses in actively mode-locked lasers is presented. In the presence of phase modulation and/or group velocity dispersion, the linear operator that governs the time evolution of the pulse fluctuations inside the laser cavity is not Hermitian (or normal) and the eigenmodes of this operator are not orthogonal. As a result, the eigenmodes have excess noise and the noise in different eigenmodes is highly correlated. We construct quantum operators for the pulse photon number, phase, timing, and frequency fluctuations. The nonorthogonality of the eigenmodes results in excess noise in the pulse photon number, phase, timing, and frequency. The excess noise depends on the frequency chirp of the pulse and is present only at low frequencies in the spectral densities of the pulse noise operators. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Self-focusing during femtosecond micromachining of silicate glasses

    Publication Year: 2004 , Page(s): 57 - 68
    Cited by:  Papers (6)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1424 KB) |  | HTML iconHTML  

    Many recent investigations of micromachining with lasers, in vacuum and in ambient air environments, have demonstrated the improvements possible when using femtosecond-duration laser pulses compared with long laser pulses. There are obvious practical advantages for rapid micromachining in ambient air conditions. However, the maximum laser intensity and repetition rate are then eventually limited by the avalanche breakdown and nonlinear effects in the air through which the focused laser beam must propagate both outside the work piece and within the structure that is being machined. This paper investigates these limits in femtosecond deep hole drilling at high laser intensities in silicate glasses. In particular, it shows how nonlinear optical effects, particularly self-focusing, can dramatically affect hole shape and the rate of penetration during deep hole drilling. The experiments described here demonstrate how nonlinear Kerr focusing of femtosecond laser pulses occurs during propagation of intense femtosecond laser pulses through the atmosphere within the machined channel at powers levels significantly below the critical power for self-focusing in ambient air. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Modeling of skin tissue ablation by nanosecond pulses from ultraviolet to near-infrared and comparison with experimental results

    Publication Year: 2004 , Page(s): 69 - 77
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (392 KB) |  | HTML iconHTML  

    Comprehension of biological tissue ablation by short laser pulses in a broad optical spectrum is of fundamental importance to the understanding of laser-tissue interaction and advancing surgical applications of lasers. We report a new plasma ablation model in which the chromophore ionization pathway is incorporated to explain the skin tissue ablation by nanosecond laser pulses from ultraviolet to near-infrared. A rate equation is solved to examine the effects of chromophore, cascade, and multiphoton ionization on the optical breakdown of the tissue. The wavelength and spot size dependence of the breakdown thresholds have been measured and agreements have been found between the calculated and measured results. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • On the performance analysis and design of an integrated front-end PIN/HBT photoreceiver

    Publication Year: 2004 , Page(s): 78 - 91
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (600 KB) |  | HTML iconHTML  

    A detailed study on the performance analysis and optimum design of an integrated front-end PIN/HBT photoreceiver for fiber-optic communication is presented. Receiver circuits with two different transimpedance amplifiers-a single-stage common emitter (CE) amplifier and a three-stage amplifier comprising a CE amplifier and two emitter followers (EFs), are analyzed assuming a standard load of 50 Ω. A technique to include the transit-time effect of a PIN photodetector on the overall receiver circuit analysis is introduced and discussed. Gain-bandwidth product (GB) and gain-bandwidth-sensitivity measure product (GBS) are obtained as functions of feedback resistance (RF) and various device parameters. Hence, some optimum designs are suggested using a photodetector of area 100 μm2 and with a feedback resistance of 500 Ω. The bandwidth plays a major role in determining the optimum designs for maximum GB and maximum GBS. A bandwidth >8 GHz has been obtained for the photoreceiver even with a single-stage CE amplifier. The optimum design for a receiver with a three-stage amplifier shows a bandwidth of 35 GHz which is suitable for receivers operating well beyond 40 Gb/s; however, in this case, the gain is reduced. The performance of different fixed square-emitter structures are investigated to choose the optimum designs corresponding to different gains. Very low power dissipation has been estimated for the optimized devices. The noise performance of the devices with optimum designs was calculated in terms of the minimum detectable optical power for a fixed bit-error rate of 10-9. The present design indicates that GB and noise performance can be improved by using an optimum device design. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Special Issue on Sensors for the Prevention of Terrorist Acts

    Publication Year: 2004 , Page(s): 92
    Save to Project icon | Request Permissions | PDF file iconPDF (125 KB)  
    Freely Available from IEEE
  • Special Issue on Senors for Industrial Process Tomography

    Publication Year: 2004 , Page(s): 93
    Save to Project icon | Request Permissions | PDF file iconPDF (135 KB)  
    Freely Available from IEEE
  • Join IEEE

    Publication Year: 2004 , Page(s): 94
    Save to Project icon | Request Permissions | PDF file iconPDF (283 KB)  
    Freely Available from IEEE
  • IEEE copyright form

    Publication Year: 2004 , Page(s): 95 - 96
    Save to Project icon | Request Permissions | PDF file iconPDF (1058 KB)  
    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics Information for authors

    Publication Year: 2004 , Page(s): 03
    Save to Project icon | Request Permissions | PDF file iconPDF (32 KB)  
    Freely Available from IEEE
  • [Breaker page]

    Publication Year: 2004 , Page(s): 0_4
    Save to Project icon | Request Permissions | PDF file iconPDF (2 KB)  
    Freely Available from IEEE

Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University