Electron Devices, IEEE Transactions on
Issue 1 • Date Jan. 2004
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Displaying Results 1 - 25 of 28
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Table of contents
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PDF (52 KB)
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IEEE Transactions on Electron Devices Society Information
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PDF (43 KB)
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The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs
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PDF (376 KB)
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Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope
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PDF (744 KB)
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A statistical model for extracting geometric sources of transistor performance variation
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PDF (272 KB)
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A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation
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PDF (984 KB)
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A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown
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PDF (464 KB)
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Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma
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PDF (488 KB)
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Influences of structure around gate-edge on high electric field strength in MISFETs with high-k gate dielectrics
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PDF (248 KB)
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High-performance and low-cost 0.15-μm nMOSFETs using simultaneous N-gate and source/drain doping process
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PDF (472 KB)
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Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics
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PDF (408 KB)
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Characterization of 1.9- and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate
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PDF (536 KB)
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Efficacy of charge sharing in reshaping the surface electric field in high-voltage lateral RESURF devices
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PDF (456 KB)
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The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs
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PDF (488 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
