Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Microwave and Guided Wave Letters, IEEE

Issue 9 • Date Sept. 1991

Filter Results

Displaying Results 1 - 9 of 9
  • Scattering parameter characterization of microwave optoelectronic devices and fiber-optic networks

    Publication Year: 1991 , Page(s): 233 - 235
    Cited by:  Papers (10)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (201 KB)  

    A microwave fiber-optic network analyzer test set is proposed that will allow the application of two-port calibration theory to the measurement of optical and optoelectronic components in high frequency fiber-optic links. Formulae for the optoelectronic calibration are presented. A unified approach to optical and optoelectronic two-port calibration theory is covered.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Picosecond characterization of bent coplanar waveguides

    Publication Year: 1991 , Page(s): 236 - 238
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (252 KB)  

    Picosecond electrical pulse propagation on Au coplanar waveguides fabricated on semi-insulating GaAs substrates has been analyzed. Propagation speed and signal distortion between the straight and bent transmission lines of different geometries were measured and compared with the aid of an electrooptic sampling system. The results indicate that the bent coplanar waveguides are capable of linking electronic devices operating in the sub-THz frequency regime. It is also found that smoothing of the bends can considerably improve high-frequency performance of these lines.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Dual-series solution to scattering from a semicircular channel in a ground plane

    Publication Year: 1991 , Page(s): 239 - 242
    Cited by:  Papers (19)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (197 KB)  

    Exact dual-series eigenfunction solutions, and simple closed-form low-frequency asymptotic approximations are determined for the problems of TM and TE scattering from a semicircular channel in a perfectly conducting ground plane. The eigenfunction solutions provide benchmarks for channel scattering, and the low-frequency solutions can be used to determine directly incremental length diffraction coefficients for narrow channels.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Transmission line capacitance measurement

    Publication Year: 1991 , Page(s): 243 - 245
    Cited by:  Papers (89)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (196 KB)  

    The capacitance of coplanar lines is measured with two new techniques, one utilizing the resistance of the line and the other that of a resistor embedded in the line. The results of both measurements agree closely with calculations. A technique for directly comparing the capacitances of two similar transmission lines is also demonstrated. The relevance of these measurements to the determination of characteristic impedance is discussed.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Method for characterization of intrinsic and extrinsic components of semiconductor laser diode circuit model

    Publication Year: 1991 , Page(s): 246 - 248
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (172 KB)  

    A simple method for the characterization of the intrinsic and extrinsic parameters of a semiconductor laser diode has been described. This method is based on the measurement of intensity noise, small-signal modulation response and input reflection coefficient of the device. The intrinsic 3-dB-modulation bandwidth and the extrinsic parasitic components associated with the device can be readily determined by using the analytical expressions presented. It has been shown that the major limitation of the 3-dB-modulation bandwidth can be attributed to the device chip RC time constant.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Universal taper for compensation of step discontinuities in microstrip lines

    Publication Year: 1991 , Page(s): 249 - 251
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (135 KB)  

    A simple closed form expression is derived for the contour of a taper compensating step discontinuities in microstrip lines. The procedure is based on the observation that a function playing a prominent role in the differential equation of the taper admits to a simple approximation. The contour formula is shown to be valid, with good accuracy, for a very broad range of conditions.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Rigorous formulation for fields and currents in superconducting microwave transmission lines

    Publication Year: 1991 , Page(s): 252 - 254
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (209 KB)  

    A direct approach is described for obtaining current distribution. power handling capabilities, and propagation characteristics of high T/sub c/ superconductor microwave lines. A rigorous formulation based on coupling a full-wave electromagnetic model with London's equations and the two fluid model for superconducting materials is suggested. The finite-difference scheme is employed to obtain a simplified solution. Calculated results showing current distributions and quality factor of a superconducting microstrip line are presented.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Peak current and magnetic flux density variations with strip width in superconducting microstrip lines

    Publication Year: 1991 , Page(s): 255 - 257
    Cited by:  Papers (3)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (226 KB)  

    A computer model based on London's equations and Maxwell's equations is used to investigate the characteristics of high T/sub c/ superconducting microstrip lines. Distributions of superconducting current densities inside the strip, the magnetic flux density, and the quality factor variations with the strip width and operating frequency are presented. The obtained results are very useful for CAD. It is observed that an empirical relation between the strip width and the peak current density on the strip can be deduced. The structure can be optimized to produce the highest quality factor or the largest current carrying capacity according to the application.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 0.7 W X-Ku-band high-gain, high-efficiency common base power HBT

    Publication Year: 1991 , Page(s): 258 - 260
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (204 KB)  

    Small sized AlGaAs-GaAs HBTs (heterojunction bipolar transistors) have achieved excellent power performance throughout the microwave frequency band. With the implementation of the multi-via-hole design, the HBT performance (gain and efficiency) is maintained as the size increases. A 0.7 W common-base (CB) power HBT with performance around 10 dB gain and 50% PAE well into the Ku band is reported. The performance is comparable to the pseudomorphic HEMT in this frequency range. The yield and uniformity are excellent. The high bias voltage (9.3 V Vce) is also desirable from a system viewpoint View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

This Periodical ceased production in 2000. The current retitled publication is IEEE Microwaves and Wireless Component Letters.

Full Aims & Scope