Issue 1 • Mar 2003
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimesPublication Year: 2003, Page(s):8 - 13
Cited by: Papers (12)
A comparative study of oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed at high voltages in inversion and in accumulation regimes is reported. We show that in all cases the breakdown location is uniformly distributed along the total channel length, indicating a uniform breakdown process independent of the dopant type in the electrodes. At low stress voltages (i.e., at operating cond... View full abstract»
Cited by: Papers (9)
The effect of technology scaling (0.5-0.09 μm) on single event upset (SEU) phenomena is investigated using full two-dimensional device simulation. The SEU reliability parameters, such as critical charge (Qcrit), feedback time (Tfd) and linear energy transfer (LET), are estimated. For Lg<0.18 μm, the source node collects a significant fraction of radiation-ind... View full abstract»
Cited by: Papers (1)
An improved schedule to evaluate surface-mount technology popcorn jeopardy based on physics of moisture absorption is proposed. Key features are: 1) each lettered level implies a certain performance irrespective of package thickness (i.e., no penalty for thinner packages); 2) each successive level has stepped moisture concentration at the interior (i.e., clear stepped discrimination between levels... View full abstract»
Aims & Scope
IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.
Meet Our Editors
Anthony S. Oates
Taiwan Semiconductor Mfg Co.