IEEE Transactions on Device and Materials Reliability

Issue 4 • Dec. 2002

Filter Results

Displaying Results 1 - 6 of 6
  • Author index

    Publication Year: 2002, Page(s):107 - 108
    Request permission for commercial reuse | |PDF file iconPDF (175 KB)
    Freely Available from IEEE
  • Subject index

    Publication Year: 2002, Page(s):108 - 110
    Request permission for commercial reuse | |PDF file iconPDF (176 KB)
    Freely Available from IEEE
  • Filter optimization for X-ray inspection of surface-mounted ICs

    Publication Year: 2002, Page(s):102 - 106
    Cited by:  Papers (10)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (299 KB) | HTML iconHTML

    A thin Zn filter (∼300 μm) and relatively low X-ray tube voltage (∼45 kV) is recommended for X-ray inspection of surface-mounted device solder joints on printed wiring boards (PWBs). An optimal filter minimizes the Si dose that could result in cumulative damage to sensitive integrated circuit (IC) nodes, yet provides good contrast for metals such as Cu traces on PWBs and device solder b... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Imaging breakdown spots in SiO2 films and MOS devices with a conductive atomic force microscope

    Publication Year: 2002, Page(s):94 - 101
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (392 KB) | HTML iconHTML

    Conductive atomic force microscopy (C-AFM) was used to study the dielectric breakdown of SiO2 layers at a nanometric scale. First, bare oxide regions were stressed and broken down using the tip as the metal electrode of a MOS structure. The results show that the initial breakdown is electrically propagated to neighbor regions, affecting their dielectric strength. Moreover, the area affe... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The statistics of NBTI-induced VT and β mismatch shifts in pMOSFETs

    Publication Year: 2002, Page(s):89 - 93
    Cited by:  Papers (61)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (366 KB) | HTML iconHTML

    Negative bias temperature instability (NBTI) is a pFET degradation mechanism that can result in threshold voltage shifts up to 100 mV or more, even in very thin oxide devices. Since analog circuits that utilize matched pairs of devices, such as current mirrors and differential pairs, generally depend on VT matching considerably better than this, NBTI-induced VT mismatch shift... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells

    Publication Year: 2002, Page(s):80 - 88
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB) | HTML iconHTML

    A model for anomalous charge loss in nonvolatile memories is presented based on the physical description of charge transport through the tunnel oxide. This model considers multiphonon-assistance as well as arbitrary three-dimensional (3-D) distributions of oxide defects (electron traps). After identifying the trap-trap distance as the most important parameter, the 3-D model can be simplified to a ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.