Issue 5 • Date May 1991
Filter Results
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Simple analytical expressions for the fringing field and fringing-field-induced transfer time in charge-coupled devices
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PDF (660 KB)
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Reduction of fixed-pattern noise of BASIS due to low kinetic energy reactive ion and native-oxide-free processing
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PDF (616 KB)
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Design of bipolar imaging device (BASIS)
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PDF (584 KB)
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The tacking CCD: a new CCD concept
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PDF (804 KB)
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A 1/3-in 270000 pixel CCD image sensor
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PDF (340 KB)
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A new CCD architecture of high-resolution and sensitivity for color digital still picture
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PDF (572 KB)
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A 1-Megapixel, progressive-scan image sensor with antiblooming control and lag-free operation
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PDF (996 KB)
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Ultraviolet, visible, and infrared response of PtSi Schottky-barrier detectors operated in the front-illuminated mode
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PDF (636 KB)
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Room-temperature-operated infrared image CCD sensor using pyroelectric gate coupled by dielectric connector
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PDF (628 KB)
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A correlative coefficient multiplying (CCM) method for chrominance moire reduction in single-chip color video cameras
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PDF (668 KB)
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Analysis of operational speed and scaling down the pixel size of a charge modulation device (CMD) image sensor
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PDF (432 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


