Scheduled System Maintenance
On Tuesday, September 26, IEEE Xplore will undergo scheduled maintenance from 1:00-4:00 PM ET.
During this time, there may be intermittent impact on performance. We apologize for any inconvenience.

# IEEE Transactions on Components, Hybrids, and Manufacturing Technology

## Filter Results

Displaying Results 1 - 13 of 13
• ### Who's Who in CHMT

Publication Year: 1978, Page(s): 129
| PDF (83 KB)
• ### Mechanism and Control of Post-Trim Drift of Laser-Trimmed Thick-Film Resistors

Publication Year: 1978, Page(s):130 - 136
Cited by:  Papers (12)
| | PDF (964 KB)

Some of the important parameters controlling the postlaser trim drift of 100, l-K, 10-K, and 100-KOmega//Box$^b$thick-film resistors are reported. The fired thickness of the resistor plays a major role in the control of post-trim drift. The resistors with fired thickness (tf)leq0.5 mil show small (DeltaR/R leq0.3 percent) and predictable drift, whereas those with t... View full abstract»

• ### Aging of Highly N-Dopedalpha-Ta Thin-Film Capacitors

Publication Year: 1978, Page(s):148 - 151
Cited by:  Papers (3)  |  Patents (2)
| | PDF (556 KB)

Conventional/beta-Ta film capacitors change in value by about -0.4 percent over their lifetime. Their stability cannot be improved by short-term heat treatment because of damage to the oxide. Similar capacitors made from Ta containinggeq10 atomic percent nitrogen can, however, be heat treated. This paper reports a test of the stability of such devices. The aging is much small... View full abstract»

• ### Fatigue Failure of Encapsulated Gold-Beam Lead and TAB Devices

Publication Year: 1978, Page(s):158 - 166
Cited by:  Papers (10)
| | PDF (1503 KB)

A thermal stress model for gold-beam lead and tapeappliqued beam (TAB) devices TC bonded to a substrate is presented. The bonded appliqued beam-centerline is assumed to be geometrically similar to that of a bonded gold-beam lead. The devices are assumed to be encapsulated with room-temperature vulcanizing rubber (RTV). For gold-beam lead devices and TAB devices with large chips and long beams (LL<... View full abstract»

• ### Electrically Insulative Adhesives for Hybrid Microelectronic Fabrication

Publication Year: 1978, Page(s):192 - 197
| | PDF (744 KB)

Four insulative adhesives for attachment of alumina substrates to metallic headers in hermetically sealed packages have been evaluated. Tests were performed to determine long-term reliability of the epoxies and to select the most suitable adhesive for use in a highrate hybrid production facility. The adhesive selected for use was a Bstage film epoxy having superior lap shear strength with all plat... View full abstract»

• ### Thermal Design in a Hybrid System with High Packing Density

Publication Year: 1978, Page(s):176 - 181
Cited by:  Papers (2)
| | PDF (896 KB)

The need for higher speed digital systems is likely to lead to power dissipation per unit volume of up to 106 W/m3. One approach is to use a thick film hybrid assembly technology, and various cooling techniques for such a system are examined. Theoretical results for alternative heat transfer mechanisms are presented, and the effects of chip density and size and system thermal resistances are illus... View full abstract»

• ### Shear Mode Wire Failures in Plastic-Encapsulated Transistors

Publication Year: 1978, Page(s):143 - 147
| | PDF (728 KB)

During the development of a wire-bonded plasticencapsulated transistor, it was found that the usual wire pull technique for measuring bond strength was not adequate for optimization of the bonding process and did not correlate with the observed failures which were caused by shear forces. A shear testing technique and apparatus are presented which were developed to quantitatively describe the quali... View full abstract»

• ### Surface Contaminant Characterization Using Potential-Current Curves

Publication Year: 1978, Page(s):167 - 171
Cited by:  Papers (2)
| | PDF (632 KB)

Results are reported of an investigation of potentialcurrent curves for the characterization of contaminants on electrical contact surfaces. It was found that pronounced leveling of the potential (decreasing contact resistance) occurs as the junction temperature is raised through the melting temperature of the contaminants. Thus the characteristic shape of potential-current curves may be used to d... View full abstract»

• ### The Sandwich Coating Between Conductive Layers for the Prevention of Silver-Migrations on a Phenolic Board

Publication Year: 1978, Page(s):182 - 186
Cited by:  Papers (4)
| | PDF (672 KB)

Work on a functional two-layer coating construction which has the capability of withstanding both silver-migration inhibition and humidity has been developed for application to a phenolic board. This system also plays an additional role of isolating printed conductors from the board material. First, undercoating-resin layers, applied prior to the printed conductors, serve as the isolation layers t... View full abstract»

• ### Velocity Distribution of the Moving Cathode Spot in Breaking Contact Arcs

Publication Year: 1978, Page(s):152 - 157
Cited by:  Papers (15)
| | PDF (1032 KB)

The motion of cathode spot in Au, Ag, Cu, and Ni contacts, which affects the formation of the pip and crater structures, has been precisely observed by utilizing a high-speed camera in moderate current, atmospheric pressure dc break arcs. Dependencies of contact material, current and voltage on the motion of cathode spot were examined experimentally. Behaviors of the cathode spot were evaluated by... View full abstract»

• ### Thermal Conductivity Enhancement of Epoxies by the use of Fillers

Publication Year: 1978, Page(s):172 - 176
Cited by:  Papers (6)  |  Patents (1)
| | PDF (616 KB)

To predict the effect of fillers on the thermal conductivity of epoxies, a model has been proposed which consists of a right circular cylinder of epoxy with a hemisphere of a thermally conductive material imbedded in each end. The laws of heat conduction are then applied to this model to obtain a composite thermal conductivity. The effect of packing density of the spheres is considered, then modif... View full abstract»

• ### Tantalum Film Capacitors with Improved AC Properties

Publication Year: 1978, Page(s):137 - 142
Cited by:  Papers (12)
| | PDF (896 KB)

Tantalum thin-film capacitors have been fabricated from magnetron sputtered tantalum films with different nitrogen concentrations. Capacitors made from film containing between 13 and 22 atom percent nitrogen and heat treated at temperatures between 250°C and 350°C show lower ac losses and TCC, and improved capacitance stability, when compared to standard capacitors based on tantalum cont... View full abstract»

• ### Thin-Film Capacitors Made from TaN Films

Publication Year: 1978, Page(s):187 - 191
Cited by:  Papers (2)  |  Patents (1)
| | PDF (528 KB)

Thin-film capacitors were prepared from sputtered tantalum nitride thin films (TaN capacitors). The dielectric was formed by anodic oxidation and the counterelectrode was deposited by evaporation of nichrome-gold. The TaN capacitors excelled the usual TM capacitors in various properties. The temperature coefficient of capacitance was 129 ppm/°C and the dissipation factor was 0.0014 at 1 kHz. ... View full abstract»

## Aims & Scope

This Transaction ceased production in 1993. The current publication is titled IEEE Transactions on Components, Packaging, and Manufacturing Technology.

Full Aims & Scope