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IEEE Transactions on Parts, Hybrids, and Packaging

Issue 4 • Date December 1977

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Displaying Results 1 - 17 of 17
  • Foreword

    Publication Year: 1977, Page(s): 337
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    Freely Available from IEEE
  • Studies of Second Breakdown in Silicon Diodes

    Publication Year: 1977, Page(s):361 - 368
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1160 KB)

    First and second breakdown in silicon diodes are studied with a one-dimensional computer program that includes both electronic and thermal processes. Extensive calculations of both static and dynamic current density-voltage characteristics are shown for temperatures from 300 to 600 K. The variations of first and second breakdown voltages with doping density and diode width are presented. Second br... View full abstract»

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  • Alternative Methods for Determining Chip Inductor Parameters

    Publication Year: 1977, Page(s):378 - 385
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (928 KB)

    For high density packaging applications, it is not sufficient to know only the inductance, Q, and dc resistance of a chip inductor. The self-resonant frequency, coupling coefficient, working voltage, and rated current are important parameters that must also be known to properly utilize these components. However, the small size and shielding of chip inductors make it difficult to determine these pa... View full abstract»

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  • TRAPATT's: High Power Devices for Wide Pulse and CW Microwave Applications

    Publication Year: 1977, Page(s):344 - 348
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    Single large diameter ring structure TRAPATT diodes on diamond heat sinks have yielded power outputs of up to 63 W with 30-35-percent efficiency at 1.73 GHz when operated with 50-µs pulsewidths and at a 1-percent duty factor. CW power outputs of up to 8.3 W at 1.6 GHz have also been obtained. Microwave performance data, diode fabrication procedures, circuit techniques, and a failure analysis ... View full abstract»

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  • The Ultrasonic Welding Mechanism as Applied to Aluminum-and Gold-Wire Bonding in Microelectronics

    Publication Year: 1977, Page(s):406 - 412
    Cited by:  Papers (34)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1560 KB)

    This paper represents a review as well as an extension of previous work concerned with the mechanism of microelectronic ultrasonic welding for both aluminum and gold wires. A series of experiments was carried out to determine the mechanism of gold-to-gold ultrasonic bonding. These experiments, including lift-off pattern studies, clamped-wire studies, and bond deformation versus ultrasonic vibratio... View full abstract»

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  • Higher Q from Pot Core Inductors

    Publication Year: 1977, Page(s):371 - 377
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    To obtain the maximum Q (quality factor) from a given inductor structure, the designer must employ his whole bag of design tools. When that inductor operates at several megahertz or more, the bag must often be turned inside out. This paper provides design techniques necessary to maximize inductor Q, with particular emphasis on higher frequency applications. Loss analysis (l/Q) calculations for mag... View full abstract»

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  • Fuse Resistor Consisting of a Metallic Thin Film and a Polymerized Organic Film on a Substrate

    Publication Year: 1977, Page(s):368 - 371
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A new type of fuse resistor has been made by the following method. A polymerized organic film is formed on a substtate by the plasma polymerization method. Then a Ni-Cr thin film is deposited by vacuum evaporation to form a crossover pattern. Resistors have been fabricated in the range 0.47-10 000 \Omega , ¼ W, which exhibit uniform characteristics with ... View full abstract»

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  • Low Loss Surface-Acoustic-Wave Filters

    Publication Year: 1977, Page(s):348 - 353
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1096 KB)

    For several years surface-acoustic-wave (SAW) devices have looked promising as future components for receiver front-end and intermediate frequency filters. However, high insertion loss and a time domain triple transit signal have limited the utilization of these devices. The low loss SAW filter overcomes both previous problems and is a milestone in electronic component development. Filters with lo... View full abstract»

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  • A Study of the Reliability of Microwave Transistors

    Publication Year: 1977, Page(s):354 - 361
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1920 KB)

    A series of RF operating life tests has been performed on microwave transistors with different metallization systems to evaluate failure mechanisms and compare the lifetimes expected from the devices. An initial series of high temperature CW tests indicated that aluminum metallized devices fail after 2000h at 225°C, primarily due to voids in the emitter fingers caused by electromigration. Gol... View full abstract»

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  • High Temperature Thermal Characteristics of Microelectronic Packages

    Publication Year: 1977, Page(s):385 - 390
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    This paper describes results of the computer-analysis pottion of a research program which was conducted to study the thermal characteristics of microcircuits in high temperature environments. A special IC chip, bonded to an alumina chip carrier, was modeled for these simulations. It was found that thermal resistance values and thermal time constants nearly double when the chip carrier temperature ... View full abstract»

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  • Spurious Signal Generation in Plastic Film Capacitors

    Publication Year: 1977, Page(s):402 - 406
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    Plastic film capacitors with dielectric materials such as Mylar or polycarbonate have been observed to generate spurious signals which appear as small spikes in capacitor voltage in the range of 10-300 µV. Such transients repeat at intervals varying from fractions of a second to years, becoming more frequent during periods of temperature change. The tendency to produce this phenomenon can per... View full abstract»

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  • Reliability Study of Wire Bonds to Silver Plated Surfaces

    Publication Year: 1977, Page(s):419 - 425
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1352 KB)

    The influence of temperature and environment on bond integrity was investigated for both aluminum ultrasonic and gold thermocompression wire bonds made to silver plate. Storage of aluminum-silver bonds at 85°C-8S-percent relative humidity (85/85) (no bias) resulted in progressive bond strength degradation and a shift in the primary failure mode from wire breaks to bond lifts. Degradation was ... View full abstract»

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  • Ceramic-Chip-Capacitor Attachment

    Publication Year: 1977, Page(s):395 - 399
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1024 KB)

    Soldering of ceramic-chip capacitors to various kinds of circuit bearing substrates has been accepted ever since capacitors were first introduced to electronic circuit and packaging designers. The palladium-silver end-cap terminals normally Supplied were, in fact, advertised as being solderable with minimum leaching of silver into the solder. Upon a detailed investigation of a capacitor failure it... View full abstract»

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  • ZnO Varistors for Transient Protection

    Publication Year: 1977, Page(s):338 - 343
    Cited by:  Papers (5)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    ZnO varistors are novel ceramic semiconductor devices used for protection of electronic equipment against transient overvoltages due to switching surges or lightning. This article describes the microstructure, circuit behavior, and operation of ZnO varistors. ZnO varistors have highly nonlinear current-voltage characteristics similar to back-to-back Zener diodes but with much greater current, volt... View full abstract»

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  • High-Energy Solid-State Electrical Surge Arrestor

    Publication Year: 1977, Page(s):413 - 419
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1536 KB)

    In this paper an engineering model of a high-energy (20 ~ 40 C of charge, 15 ~ 35 kJ) solid-state electrical surge arrestor (ESA) is presented. The basic elements are commercial or custom-made metal oxide varistors (MOV). The approach to achieve a high-coulomb ESA is to use paralleled MOV's with efforts concentrated on ensuring uniform current partition by matching the MOV's conduction characteris... View full abstract»

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  • High Temperature Properties of Solid Tantalum Chip Capacitors

    Publication Year: 1977, Page(s):390 - 394
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    The use of tantalum chip capacitors in conjunction with hybrid circuitry requires stable capacitor characteristics that will withstand the stresses of component attachment, testing, and circuit operations. A line of miniature tantalum chip capacitors is discussed with emphasis on materials, constructional methods, and resultant performance of the devices under environmental and operational conditi... View full abstract»

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  • Film Capacitors with Low Internal Inductance

    Publication Year: 1977, Page(s):399 - 402
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    It is shown experimentally that the turns between tabs and the tab straps themselves are the major sources of internal inductance in a buried-foil capacitor with conventional flagged tabs. For example, two tab straps each 4 mm wide and 32 mm long contribute about 46 nH of inductance. A unique tab structure in which two conventional tabs were assembled and inserted as a low-inductance fiat cable an... View full abstract»

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Aims & Scope

This Transaction ceased production in 1977. The current publication is titled IEEE Transactions on Components, Packaging, and Manufacturing Technology.

Full Aims & Scope