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IEEE Transactions on Microwave Theory and Techniques

Issue 3 • Mar. 1984

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  • [Front cover - Mar. 1984 [T-MTT]]

    Publication Year: 1984, Page(s):f1 - f2
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  • Foreword

    Publication Year: 1984, Page(s): 225
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    Freely Available from IEEE
  • A 22 - 24-GHz Cryogenically Cooled GaAs FET Amplifier

    Publication Year: 1984, Page(s):226 - 230
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (986 KB)

    This paper describes the design and performance of a cryogenically cooled low-noise FET amplifier operating in the 22-24-GHz range. The amplifier employs five cascaded single-ended gain stages and an integral bandpass filter. Noise temperatures in the 200 K range with an associated gain of 28 dB are typical for the nine cooled units built to date. View full abstract»

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  • Patent abstracts

    Publication Year: 1984, Page(s):325 - 329
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (386 KB)

    These patent abstracts of recently issued patents of interest to microwave engineers are intended to provide the minimum information necessary for readers to detennine if they are interested in examining the patent in more detail. Complete copies of patents are available for a small fee by writing: U.S. Patent and Trademark Office, Box 9, Washington, DC, USA. View full abstract»

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  • Membership Application, IEEE Microwave Theory and Techniques Group

    Publication Year: 1984, Page(s): 330
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  • IEEE Open Order Plan [advertisement]

    Publication Year: 1984, Page(s): 331
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    Freely Available from IEEE
  • IEEE Annual Combined Index [advertisement]

    Publication Year: 1984, Page(s): 332
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    Freely Available from IEEE
  • [Back cover - Mar. 1984 [T-MTT]]

    Publication Year: 1984, Page(s):b1 - b2
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  • Dual-Gate MESFET Mixers

    Publication Year: 1984, Page(s):248 - 255
    Cited by:  Papers (54)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1000 KB)

    A theoretical and experimental investigation of dual-gate MESFET mixers is presented. Based on a detailed analysis of the different nonlinear modes of DGFET's, a computer-aided modeling procedure has been developed, which allowed to recognize and optimize critical circuit and bias conditions for high conversion gain and IF bandwidth. Theoretical results are in good agreement with experiments on a ... View full abstract»

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  • New Narrow-Band Dual-Mode Bandstop Waveguide Filters (Corrections)

    Publication Year: 1984, Page(s): 324
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (85 KB)

    In the first paragraph of Section II of the above paper, the words "Lagrange-Sophie Germaine's" do not belong there. View full abstract»

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  • A Simplified Microwave Model of the GaAs Dual-Gate MESFET

    Publication Year: 1984, Page(s):243 - 248
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    A simplified wide-band model of the GaAs dual-gate MESFET based upon the familiar cascode representation is presented, which is valid over the frequency range of 2-11 GHz. The equivalent circuit contains 14 elements and the parameter values are directly determined from 3-port S-parameters over the frequency range of 4-6 GHz, and dc data. Separate microwave measurements of each FET part are not req... View full abstract»

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  • A K-Band GaAs FET Amplifier with 8.2-W Output Power

    Publication Year: 1984, Page(s):317 - 324
    Cited by:  Papers (14)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1712 KB)

    An 8.2-W GaAs FET amplifier with 38.6+-0.5-dB gain over a 17.7-19.1 GHz frequency band has been developed. This amplifier combines the outputs of eight multistage amplifier modules utilizing a radial combiner. This state-of-the-art power level has been achieved with AM/PM of less than 2°/dB. The third-order intermodulation products at 1-dB gain compression were 20 dBc, and variation in group ... View full abstract»

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  • Design of Broad-Band Power GaAs FET Amplifiers

    Publication Year: 1984, Page(s):261 - 267
    Cited by:  Papers (39)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    A model is presented for the drain-gate breakdown phenomenon of GaAs FET's, based on experimental results. this breakdown model is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET. The program is capable of searching for the optimum power load for an FET and simulating the power performance of multistage amplifiers. The de... View full abstract»

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  • A GaAs FET Model for Large-Signal Applications

    Publication Year: 1984, Page(s):276 - 281
    Cited by:  Papers (32)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (696 KB)

    The use of GaAs FET's under large-signal conditions requires a knowledge of the nonlinear behavior of these devices. A computer program, based on a circuit model with nonlinear elements, has been developed which provides this information. Results from the computer model and examples of its use in microwave circuit design are given. View full abstract»

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  • Stability Margins in Microwave Amplifiers

    Publication Year: 1984, Page(s):237 - 242
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (936 KB)

    Shunt feedback around single GaAs MESFET's is becoming more widespread to ease matching to 50 ohm terminations and improve gain flatness. The most accurate and meaningful method of assessing feedback intentional or unintentional, is described. A simple sequence of steps leads from measured S-parameters to a plot of return ratio and Nyquist's criterion of stability. An amplifier rising an accuratel... View full abstract»

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  • A Packaged 20-GHz 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink Structure

    Publication Year: 1984, Page(s):309 - 316
    Cited by:  Papers (14)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1296 KB)

    A novel Via-Hole plated heat sink (PHS) structure with an improved gate-packing density is developed for K-band GaAs power FET's. The gate-packing density in this structure is increased to four times greater than that in the conventional direct via-hole structure, by making via-holes under the source-grounding pads fabricated outside the FET active area. The increase in the gate-packing density al... View full abstract»

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  • The Dynamical Behavior of a Single-Mode Optical Fiber Strain Gage (Corrections)

    Publication Year: 1984, Page(s): 324
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (85 KB)

    In the first paragraph of Section II of the above paper, the words "Lagrange-Sophie Germaine's" do not belong there. View full abstract»

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  • GaAs Dual-Gate FET for Operation Up to K-Band

    Publication Year: 1984, Page(s):256 - 261
    Cited by:  Papers (13)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    A high-frequency equivalent circuit model of a GaAs dual-gate FET and analytical expressions for the input/output impedances, transconductance, unilateral gain, and stability factor are presented in this paper. It is found that the gain of a dual-gate FET is higher than that of a single-gate FET at low frequency, but it decreases faster as frequency increases because of the capacitive shunting eff... View full abstract»

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  • MESFET Distributed Amplifier Design Guidelines

    Publication Year: 1984, Page(s):268 - 275
    Cited by:  Papers (250)  |  Patents (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (864 KB)

    In the paper, the analysis of GaAs MESFET distributed amplifiers and a systematic approach to their design are presented. The analysis focuses on fundamental design considerations and also establishes the maximum gain-bandwidth product of the amplifier.The design approach presented enables one to examine the tradeoffs between the variables, such as the device, the number of devices, and the impeda... View full abstract»

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  • Computer-Aided Synthesis of Lumped Lossy Matching Networks for Monolithic Microwave Integrated Circuits ( MMIC's)

    Publication Year: 1984, Page(s):282 - 289
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    A systematic computer-aided synthesis (CAS) technique of lumped Iossy matching networks is presented in this paper. This exact synthesis procedure can take arbitrary finite quality factor Q for each lumped element in the matching network and therefore facilitate the circuit design for monolithic microwave integrated circuits (MMIC's) where the loss of the passive elements is too large to be neglec... View full abstract»

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  • 2-20-GHz GaAs Traveling-Wave Power Amplifier

    Publication Year: 1984, Page(s):290 - 295
    Cited by:  Papers (68)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described. View full abstract»

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  • Computer-Aided Error Correction of Large-Signal Load-Pull Measurements

    Publication Year: 1984, Page(s):296 - 301
    Cited by:  Papers (37)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    A versatile system is described for the large-signal characterization of microwave power MESFET's. High accuracy is obtained through vector error-correction techniques. The system is calibrated using a procedure based on conventional automatic network analyzer calibration measurements and a series of simple insertion loss measurements. The measurement system provides accurate reflection coefficien... View full abstract»

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  • Characterization of GaAs FET's in Terms of Noise, Gain, and Scattering Parameters through a Noise Parameter Test Set

    Publication Year: 1984, Page(s):231 - 236
    Cited by:  Papers (45)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (808 KB)

    A method for the complete characterization of GaAs FET's in terms of noise parameters (Fo,Gammaon, Rn), gain parameters (Gao, Gamma og, Rg), and of those scattering parameters ( S/sub11/, S/sub22/|,S/sub12/| S/sub21|, ∠S12S21 ) that are needed for low-noise microwave amplifier design is presented. The instr... View full abstract»

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  • A 6-GHz 80-W GaAs FET Amplifier with a TM-Mode Cavity Power Combiner

    Publication Year: 1984, Page(s):301 - 308
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    A novel 8-way divider/combiner using TM010- and TM020 -mode cavities was developed. This divider/combiner has an insertion loss of 0.2 dB and a bandwidth of 600 MHz in the 6-GHz communications band. For broadening the operating bandwidth of the divider/combiner, two techniques of double cavities and tight coupling are described. Degradation of power-combining efficiency is al... View full abstract»

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Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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Editor-in-Chief
Luca Perregrini
luca.perregrini@unipv.it

Editor-in-Chief
Jose Carlos Pedro
edit.tmtt@ua.pt