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IEEE Transactions on Microwave Theory and Techniques

Issue 12 • Dec. 1983

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  • [Front cover - Dec. 1983 [T-MTT]]

    Publication Year: 1983, Page(s):f1 - f2
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    Freely Available from IEEE
  • Index (Dec. 1983 [T-MTT])

    Publication Year: 1983, Page(s):i1 - i19
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    Freely Available from IEEE
  • Table of contents (Dec. 1983 [T-MTT])

    Publication Year: 1983, Page(s):971 - 972
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    Freely Available from IEEE
  • Editor's Overview (Dec. 1983 [T-MTT])

    Publication Year: 1983, Page(s):973 - 974
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    Freely Available from IEEE
  • The 1983 MTT-S International Symposium Microwave

    Publication Year: 1983, Page(s):975 - 984
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5465 KB)

    The 1983 MTT-S International Microwave Sym-posium and Workshops were jointly held with the 1983 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium during the week of May 31 to June 3, 1983 at the Sheraton-Boston Hotel in Boston, MA. In addition to the regular sessions of the two Symposia there were two panel discussions in the first evening and four workshops including the ARFTG meet... View full abstract»

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  • Awards (Dec. 1983 [T-MTT])

    Publication Year: 1983, Page(s):985 - 989
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1019 KB)

    The following awards were presented at the Annual Symposium Banquet by MTT-S President, Charles T. Rucker. View full abstract»

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  • Table of contents - 1982 MTT Symposium Digest (Dec. 1983 [T-MTT])

    Publication Year: 1983, Page(s):989 - 995
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  • Cryogenic All Solid-State Millimeter-Wave Receivers for Airborne Radiometry

    Publication Year: 1983, Page(s):996 - 1001
    Cited by:  Papers (5)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1443 KB)

    Cryogenic receiver modules for 90 and 140 GHz have been developed that are part of an airborne imaging system. They consist of Schottky-barrier mixers followed by GaAs-FET IF amplifiers. The DSB receiver noise temperatures are 210 K for the 90-GW and 250 K for the 140-GHz system. The instantaneous bandwidth is 2.5 GHz for both front ends. Results of some flight tests are presented. View full abstract»

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  • Insulated Nonradiative Dielectric Waveguide for Millimeter-Wave Integrated Circuits

    Publication Year: 1983, Page(s):1002 - 1008
    Cited by:  Papers (6)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (739 KB)

    An improved version of the nonradiative dielectric waveguide (NRD-guide), called an insulated nonradiative dielectric waveguide, is proposed for millimeter-wave integrated circuits. This dielectric waveguide can overcome some difficulties which arise when high dielectric material is used in the NRD-guide. Guide wavelengths and transmission losses were measured at 50 GHz and compared with theory. I... View full abstract»

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  • E-Plane Filters with Finite-Thickness Septa

    Publication Year: 1983, Page(s):1009 - 1013
    Cited by:  Papers (40)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (486 KB)

    The effect of the metalization thickness of the septum is incorporated into an efficient computer-aided design (CAD) program for E-plane filters. The method is mathematically exact and numerically efficient. The results agree well with experimental data. The effect of the metal thickness on filter performance is demonstrated with a Ku-band filter. View full abstract»

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  • Slow-Wave Coplanar Waveguide on Periodically Doped Semiconductor Substrate

    Publication Year: 1983, Page(s):1013 - 1017
    Cited by:  Papers (8)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (466 KB)

    A metal-insulator-semiconductor (MIS) coplanar waveguide with periodically doped substrate is described. An efficient numerical method is introduced in order to obtain the propagation constants and the characteristic impedances of the constituent sections of each period. Using the results, the characteristic of the periodic MIS coplanar waveguide is analyzed by Floquet's theorem. The theoretical s... View full abstract»

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  • Design of an Overlay Directional Coupler by a Full-Wave Analysis

    Publication Year: 1983, Page(s):1017 - 1022
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (564 KB)

    A full-wave analysis based on the spectral-domain method is applied to coupled overlay microstrips, coupled inverted microstrips, and coupled microstrips. Exclusive numerical data including frequency characteristics are included. A 10-dB overlay coupler was built according to the design theory, and experimental results are reported. View full abstract»

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  • Evaluation of Modes in Dielectric Resonators Using a Surface Integral Equation Formulation

    Publication Year: 1983, Page(s):1023 - 1029
    Cited by:  Papers (76)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (730 KB)

    A moment method solution procedure for rotationally symmetric dielectric bodies has been applied to isolated cylindrical dielectric resonators, and the frequencies, as well as Q factors due to radiation, have been determined for several of the lowest modes, including those of hybrid type. View full abstract»

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  • Investigation of a Single-Sideband Mixer Anomaly

    Publication Year: 1983, Page(s):1030 - 1038
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1352 KB)

    Measurements on a 6-GHz single-sideband (SSB) balun-coupled mixer revealed a feedthrough of RF signals between the two mixer sections that caused the IF outputs to be unbalanced at the +-90° local oscillator (LO) phase differences when using a ring diode quad. Using a bridge diode quart in this same mixer eliminated this IF output unbalance. These measurements also give conclusive evidence th... View full abstract»

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  • Modes in Dielectric-Loaded Waveguides and Resonators

    Publication Year: 1983, Page(s):1039 - 1045
    Cited by:  Papers (48)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (638 KB)

    Analysis of nonaxially symmetric modes in circular wave-guides partially filled with high-dielectric constant material is presented. A method for the accurate determination of resonant frequencies of any mode excited in dielectrically loaded wavegnide cavities is described. The method is used to construct mode charts for dielectric resonators. Comparison of the resonant frequency calculations for ... View full abstract»

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  • New Narrow-Band Dual-Mode Bandstop Waveguide Filters

    Publication Year: 1983, Page(s):1045 - 1050
    Cited by:  Papers (15)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (668 KB)

    A complementary relation between a dual-mode bandpass and bandstop waveguide filter is found. Then a new idea for constructing a bandstop filter is developed. Two trial samples of bandstop filters are constructed to demonstrate the principle. View full abstract»

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  • Generalized Analysis of Microstrip-Like Transmission Lines and Coplanar Strips with Anisotropic Substrates for MIC, Electrooptic Modulator, and SAW Application

    Publication Year: 1983, Page(s):1051 - 1059
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (879 KB)

    A unified variational expression is presented for the line capacitance of a general, multilayer anisotropic structure. The propagation characteristics of a variety of striplines, microstriplines, and coplanar strips, in isolated and coupled configurations, with anisotropic substrates having optical axis aligned along the axis of the substrate, are computed. The characteristics of these structures ... View full abstract»

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  • Loop-Gap Resonator: A Lumped Mode Microwave Resonant Structure

    Publication Year: 1983, Page(s):1059 - 1064
    Cited by:  Papers (42)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (669 KB)

    Loop-gap resonators are newly developed microwave resonant structures with a field configuration that is intermediate between lumped and distributed. Typical characteristic dimensions are of the order of 1/10 of the resonant wavelength, and typical Q's are of the order of 1600-2000 in the frequency range of 1-4 GHz. Data are presented for Q's and frequencies for a series of resonators of various d... View full abstract»

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  • Foreword (Dec. 1983 [T-MTT])

    Publication Year: 1983, Page(s): 1065
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (140 KB)

    It is evident to those connected to microwave and millimeter-wave technology that monolithic integrated-circuits technology has become increasingly vital to the development of various systems operating at microwave and millimeter-wave frequencies. A great deal of active effort is currently directed towards integrated-circuits technology and rapid progress is being made. View full abstract»

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  • Profile Studies of Ion-Implanted MESFET's

    Publication Year: 1983, Page(s):1066 - 1071
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (607 KB)

    A study of ion-implanted MESFET performance as a function of the implantation energy and fluency, and including the effects of deep-level trapping-state concentrations in the substrate, has been conducted. Carrier concentrations as a function of depth are determined through the use of LSS theory and a profiling model. An analytic device model, which computes both dc and RF characteristics, is then... View full abstract»

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  • Low-Noise MESFET's for Ion-Implanted GaAs MMIC's

    Publication Year: 1983, Page(s):1072 - 1076
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (986 KB)

    Fabrication considerations for low-noise FET's in ion-implanted GaAs monolithic microwave integrated circuits (MMIC'S) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FET's fabricated along these lines show good microwave performance tbrongh 18 GHz, approaching the performance available from similar discrete FET's. 0.8-... View full abstract»

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  • A Ka-Band GaAs Monolithic Phase Shifter

    Publication Year: 1983, Page(s):1077 - 1083
    Cited by:  Papers (10)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1185 KB)

    The design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over... View full abstract»

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  • 12-GHz-Band Low-Noise GaAs Monolithic Amplifiers

    Publication Year: 1983, Page(s):1083 - 1088
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1026 KB)

    One- and two-stage 12-GHz-band low-noise GaAs monolithic amplifiers have been developed for use in direct broadcasting satellite (DBS) receivers. The one-stage amplifier provides a less than 2.5-dB noise figure with more than 9.5-dB associated gain in the 11.7-12.7-GHz band. In the same frequency band, the two-stage amplifier has a less tlhan 2.8-dB noise figure with more than 16-dB associated gai... View full abstract»

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  • GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

    Publication Year: 1983, Page(s):1089 - 1096
    Cited by:  Papers (16)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1413 KB)

    A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FET's as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contai... View full abstract»

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  • Patent abstracts

    Publication Year: 1983, Page(s):1097 - 1099
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (188 KB)

    These patent abstracts of recently issued patents of interest to microwave engineers are intended to provide the minimum information necessary for readers to detennine if they are interested in examining the patent in more detail. Complete copies of patents are available for a small fee by writing: U.S. Patent and Trademark Office, Box 9, Washington, DC, USA. View full abstract»

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Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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Meet Our Editors

Editor-in-Chief
Dominique Schreurs
Dominique.Schreurs@ieee.org

Editor-in-Chief
Jenshan Lin
jenshan@ieee.org