By Topic

Microwave Theory and Techniques, IEEE Transactions on

Issue 1 • Date Jan. 1983

Filter Results

Displaying Results 1 - 25 of 25
  • [Front cover - Jan. 1983]

    Publication Year: 1983 , Page(s): f1 - f2
    Save to Project icon | Request Permissions | PDF file iconPDF (199 KB)  
    Freely Available from IEEE
  • Foreword

    Publication Year: 1983 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (142 KB)  
    Freely Available from IEEE
  • Design, Fabrication, and Evaluation of 2 and 3-Bit GaAs MESFET Analog-to-Digital Converter IC's

    Publication Year: 1983 , Page(s): 2 - 10
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1712 KB)  

    The analog-to-digital converter (A/D) is a critical component of a signal processing system. GHz-rate A/D's will be required in many future systems. While Si bipolar based A/D's can easily meet 4-6-bit resolution requirements, excessive power dissipation (1 W per bit) limits their operation to 100-400-MHz sampling rates. Recently, GaAs MES-FET's have demonstrated high frequency operation with relatively low power dissipation. This paper describes the design of 2- and 3-bit A/D's using GaAs MESFET's. Monolithic integrated A/D circuits were fabricated and successfully operated at gigahertz sampling rates. This sampling rate is the highest reported for any AD technology at room temperature. The power dissipation is 150-200 mW per bit. With further improvements in comparator sensitivity, the design can be extended to 4-bit A/D for GHz rate operation. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Ka-Band Monolithic GaAs Balanced Mixers

    Publication Year: 1983 , Page(s): 11 - 15
    Cited by:  Papers (4)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (725 KB)  

    Monolithic integrated circuits have been developed on semi-insulating GaAs substrates for millimeter-wave balanced mixers. The GaAs chip is used as a suspended stripline in a cross-bar mixer circuit. A double sideband noise figure of 4.5 dB has been achieved with a monolithic GaAs balanced mixer filter chip over a 30- to 32-GHz frequency range. A monolithic GaAs balanced mixer chip has also been optimized and combined with a hybrid MIC IF preamplifier in a planar package with significant improvement in RF bandwidth and reduction in chip size. A double sideband noise figure of less than 6 dB has been achieved over a 31- to 39-GHz frequency range with a GaAs chip size of only 0.5x0.43 in. This includes the contribution of a 1.5-dB noise figure due to if preamplifier (5-500 MHz). View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Yield Considerations for Ion-Implanted GaAs MMIC's

    Publication Year: 1983 , Page(s): 16 - 20
    Cited by:  Papers (1)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (574 KB)  

    An ion-implantation based process is described for fabricating GrAs monolithic microwave integrated circuits (MMIC's) incorporating active devices ,RF circuitry, and bypass capacitors. Low ohmic contact resistance and good control of metal-insulator-metal (MIM) capacitance values is demonstrated and some factors affecting FET and capacitor yield are discussed. High dc yield of typical amplifier circuits is shown indicating that this process has the potential for achieving very high overall yields in a production environment. Good yield of functional MMIC modules with multicircuit complexity is projected. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A Two-Stage Monolithic IF Amplifier Utilizing a Ta/sub 2/O/sub 5/ Capacitor

    Publication Year: 1983 , Page(s): 21 - 26
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (816 KB)  

    A two-stage monolithic IF amplifier incorporating a sputtered Ta 2O 5 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta 2O 5, Ta, and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates particulate contamination. As a result, a thin pinhole-free dielectric layer can be deposited over large areas, and 140-pF capacitors have been fabricated with excellent yields. The large unit area capacitance of 1500 pF/mm 2 available with the present process has the potential for reducing the size of matching and bias circuits in microwave monolithic circuits and hybrid thin-film circuits. The monolithic amplifiers exhibit a gain of 17.5 +- 1.0 dB from 1.2 to 2.6 GHz and a minimum noise figure of ~2.7 dB, with an associated gain of 17.5 dB at 1.7 GHz. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A Monolithic GaAs DC to 2-GHz Feedback Amplifier

    Publication Year: 1983 , Page(s): 27 - 29
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (372 KB)  

    Resistive feedback in low-frequency FET amplifiers is an attractive method of simultaneously attaining gain flatness and excellent input-output VSWR over wide bandwidths. Combined with simple matching circnitry, the feedback approach allows the design of general-purpose utility amplifiers requiring much less chip area than when conventional matching techniques are used, The 1.5- by 1.5-mm chip desenbed in this paper provides 10-dB +-1-dB gain, excellent input and output VSWR, and saturated output power in excess of +20 dBm, from below 5 MHz to 2 GHz. The noise figure is approximately 2 dB when biased for minimum noise, with an associated gain of 9 dB. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Monolithic GaAs Interdigitated Couplers

    Publication Year: 1983 , Page(s): 29 - 32
    Cited by:  Papers (3)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (745 KB)  

    This paper deseribes the design, fabrication, and performance of two monolithic GaAs C-band 90° interdlgitiited couplers with 50- and 25-Omega impedances, respectively. A comparison of the performance of' these two couplers shows that the 25-Omega coupler has the advantages of lower loss and bigher fabrication yield. The bafanced amplifier configuration rising 25-Omega couplers will require, a fewer number of elements in the input-output matching circuit of the FET amplifier. The fewer number of matcfdng elements results in great savings in the GaAs real estate for microwave monolithic intergrated circuits (MMIC's). Both the couplers have been fabricated on a 0.1-mm-thick GaAs S1 substrate. The measured results agree quite well with calculated results. The losses of the 50- and 25-Omega couplers are 0.5 and 0.3 dB, respectively, over the 4-8-GHz frequency band. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Editorial, Jan. 1983 (Transactions)

    Publication Year: 1983 , Page(s): 33
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (171 KB)  

    As the outgoing Editor of this TRANSACTIONS I look back at three interesting years. I ask myself what has been accomplished for the MTT-S membership and the authors. Since there is very little feedback from the readers I like to think that, at least based on the number of papers rejected, only about 25 percent of the authors who have submitted papers to me are dissatisfied with my performance. Over these three years a total of 588 papers plus 10 special issues have been published. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Coupling Coefficient Between Microstrip Line and Dielectric Resonator

    Publication Year: 1983 , Page(s): 34 - 40
    Cited by:  Papers (26)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (631 KB)  

    A formula of the coupling coefficient between a dielectric resonator and a microstrip line is derived from an analysis of the transmission characteristics of the microstrip line coupled to the dielectric resonator. A practical method of calculation is developed using Fourier analysis. The calculated values show good agreement with the experimental values. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A Low-Pass Prototype Network Allowing the Placing of Integrated Poles at Real Frequencies

    Publication Year: 1983 , Page(s): 40 - 45
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (595 KB)  

    This paper details a procedure by which a number of attenuation poles can be placed at differing frequencies, giving an asymmetric or symmetrical response, the only restriction being that the network must be physically symmetrical. If a number of poles are placed on one side of the passband, this technique can be used to greatly increase the selectivity of a filter on this side, while maintaining an equiripple passband response. There are four possible arrangements for these filters. They can have even or odd degree with an even or odd number of integrated poles. Only three of these are realizable in a symmetrical network and these possibilities are dealt with individually. An example is given in the case of an odd-degree filter with an odd number of integrated poles placed at two frequencies on opposite sides of the passband. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electronically Cold Microwave Artificial Resistors

    Publication Year: 1983 , Page(s): 45 - 50
    Cited by:  Papers (11)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (692 KB)  

    A Iarge percentage of microwave field-effect transistors (FET's) are shown to act as a broad-band artificial resistor with a resistance of about 25 Omega when their drain is connected to their gate. The resistance appears between the gate-drain lead and the source lead. This resistance can be raised to 50 Omega with its reactive components eliminated over a reasonable bandwidth by using a matching transmission line of the proper impedance and a length near a quarter-wave at midband. An HFET- 1000 constructed in this configuration showed an impedance of 18+-3 Omega over an octave bandwidth, and when transformed with a 30-Omega quarter-wave transmission line produced a resistance of 51+-1 Omega from 8 to 13 GHz. A noise analysis shows that, at some frequencies, some FET's in this configuration will produce artificial resistors with an effective noise temperature as low as 67 K. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Improving the Power-Added Efficiency of FET Amplifiers Operating with Varying-Envelope Signals

    Publication Year: 1983 , Page(s): 51 - 56
    Cited by:  Papers (38)  |  Patents (74)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (653 KB)  

    A technique is proposed for improving the power-added efficiency of linear, class-A FET power amplifiers operating with varying-envelope signafs. It involves dynamically controlling the gate "dc" bias voltage with the envelope of the input RF signal. It is shown theoretically that this technique, which is referred to as "class A," results in a significant improvement in the power-added efficiency over standard class A, independently of the FET power gain. The efficiency is also better than that of standard class B if the FET gain is less than about 10 dB, which is the case normally encountered at higher microwave frequencies. The practical implementation of class A requires FET's with essentially linear drain-current-versus-gate-voltage transfer characteristics. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Design of Interdigitated Capacitors and Their Application to Gallium Arsenide Monolithic Filters

    Publication Year: 1983 , Page(s): 57 - 64
    Cited by:  Papers (20)  |  Patents (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1058 KB)  

    Theoretical expressions for the interelectrode capacitance and conductor losses for an array of microstrip transmission lines are presented. The effect of finite conductor thickness is included in the analysis by introducing equations for the effective width of the transmission lines. Good agreement between theory and experiment is observed up to 18 GHz. Experimental results obtained from a lumped-element GaAs monolithic bandpass filter are in excellent agreement with theory. The filter has 1.5-dB insertion loss at 11.95 GHz and greater than 22-dB loss in the stopband. The filter measures 0.58x 1.3x0.203 mm. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optimized Waveguide E-plane Metal Insert Filters For Millimeter-wave Applications

    Publication Year: 1983 , Page(s): 65 - 69
    Cited by:  Papers (61)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (528 KB)  

    A design theory is described for rectangular waveguide metal insert filters that includes both higher order mode interaction and finite thickness of the inserts. Optimized design data for three- to five-resonator type filters with severaf insert thicknesses suitable for metal stamping and etching techniques are given for midband frequencies of about 15, 33, 63, and 75 GHz. Measured passband insertion losses of prototypes for mid-band frequencies of 15, 33, and 76 GHz are 0.2, 0.6, and 0.7 dB, respectively. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Capabilities of Multiapplicator Systems for Focussed Hyperthermia

    Publication Year: 1983 , Page(s): 70 - 73
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1024 KB)  

    Features of the randomly phased scheme and the constructive interference approach for focussed applicator systems are evaluated and compared from a practical point of view. A mathematical expression is given to estimate the depth location of a focal point that depends on the number of array elements. Constraints are indicated that limit the physical construction of such arrays and allow their application only for special purposes. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Field Theory of Planar Helix Traveling-Wave Tube

    Publication Year: 1983 , Page(s): 73 - 76
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (402 KB)  

    A pair of unidirectionally conducting screens, conducting in different directions, constitute a planar helix. The planar helix is proposed as a slow-wave structure for application in a traveling-wave tube (TWT). Field theory is applied to analyze the behavior of the planar helix in the presence of a flat electron beans present between the two screens. Results indicate the presence of three modes, with one mode having a negative attenuation constant, as in the case of the usual helix-type TWT. Curves are shown for a typical proposed planar TWT. Also, the effect of beam current is indicated. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Choosing Line Lengths for Calibrating Network Analyzers

    Publication Year: 1983 , Page(s): 76 - 78
    Cited by:  Papers (17)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (343 KB)  

    Equations, examples, and a table are given to help choose the best length for a precision transmission line which is used in some methods for calibrating a network analyzer. One line will cover a frequency range of about 10:1. Two lines will cover a range of about 65:1. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optical Injection Locking of Baritt Oscillators

    Publication Year: 1983 , Page(s): 78 - 79
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (220 KB)  

    Optical injection locking of BARITT oscillators is investigated. Preliminary experimental results are presented for the first time. A sirmple first-order locking theory gives reasonable agreement with measurements. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comments on "A Rigorous Techique for Measuring the Scattering Matrix of a Multiport Device with a Two-Port Network Analyzer"

    Publication Year: 1983 , Page(s): 79 - 81
    Cited by:  Papers (22)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (303 KB)  

    The recent article by Tippet and Speciale uses the matrix formulation of the generalized scattering parameter renormalization transformation in the form. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comment on "The Exact Noise Figure of Amplifiers with Parallel Feedback and Lossy Matching Circuit"

    Publication Year: 1983 , Page(s): 81
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (78 KB)  

    I found the short paper of K. B. Niclas "The Exact Noise Figure of Amplifiers with Parallel Feedback and Lossy Matching Circuits" very interesting, but, except for the approximated formulas, it contained only little new information, since my paper "Simultaneous Input Power Match and Noise Optimization using Feedback" [2] included most of the formulas. In that paper, I have developed a general form of noise parameters of a three-port with combinations of parallel and series feedback (or imbedding) elements. These formulas include both the formula of Niclas and of Iversen [1, [9]]. The formulas have been used in the lossless case to develop an amplifier with simultaneous noise and power input match. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Patent abstracts

    Publication Year: 1983 , Page(s): 82 - 85
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (285 KB)  

    These patent abstracts of recently issued patents of interest to microwave engineers are intended to provide the minimum information necessary for readers to detennine if they are interested in examining the patent in more detail. Complete copies of patents are available for a small fee by writing: U.S. Patent and Trademark Office, Box 9, Washington, DC, USA. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Call for Papers (Jan. 1983 Transactions)

    Publication Year: 1983 , Page(s): 86
    Save to Project icon | Request Permissions | PDF file iconPDF (50 KB)  
    Freely Available from IEEE
  • Copyright Form

    Publication Year: 1983 , Page(s): 87 - 88
    Save to Project icon | Request Permissions | PDF file iconPDF (137 KB)  
    Freely Available from IEEE
  • Technical Committees

    Publication Year: 1983 , Page(s): b1 - b2
    Save to Project icon | Request Permissions | PDF file iconPDF (146 KB)  
    Freely Available from IEEE

Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dominique Schreurs
Dominique.Schreurs@ieee.org

Editor-in-Chief
Jenshan Lin
jenshan@ieee.org