By Topic

Microwave Theory and Techniques, IEEE Transactions on

Issue 6 • Date Jun. 1982

Filter Results

Displaying Results 1 - 20 of 20
  • [Front cover - June 1982 Transactions]

    Page(s): f1 - f2
    Save to Project icon | Request Permissions | PDF file iconPDF (180 KB)  
    Freely Available from IEEE
  • Ultra-Low-Noise 1.2- to 1.7-GHz Cooled GaAsFET Amplifiers

    Page(s): 849 - 853
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (780 KB)  

    A 3-stage GaAsFET amplifier operating at 13 K, utilizing source inductance feedback is described. The amplifier has a noise temperature of <10 K, input return loss >15 dB over the 1.2- to 1.7-GHz frequency range. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • GaAsFET Mount Structure Design for 30-GHz-Band Low-Noise Amplifiers

    Page(s): 854 - 858
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (413 KB)  

    This paper describes a GaAsFET mount design method for 30-GHz-band low-noise reflection-type amplifiers with the metal wall as a feedback circuit. Two examples of 30-GHz-band low-noise amplifiers are described; one with wide-band response and the other with high-gain response. The wide-band amplifier has 13-dB gain and 8.5-dB noise figure in the frequency range from 27.5 GHz to 29.1 GHz. The high gain amplifier has 15-dB gain and 9-dB noise figure in the frequency range from 27.7 GHz to 28.7 GHz. These results demonstrate the utility of this design approach. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis of Image Recovery Down Converter Made by Planar Circuit Mounted in a Waveguide

    Page(s): 858 - 868
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1040 KB)  

    This paper presents an analysis of a superhigh frequency (SHF) down converter using a Schottky-barrier mixer diode and a planar circuit mounted in a waveguide. The analysis assumes that the mixer diode consists of a nonlinear conductance g, a junction capacitance C j, an ohmic spreading resistance R s, and several parasitic susceptances. The frequency performance of the impedance of external circuits at the signal, image, and intermediate frequency bands is considered. This analysis also includes consideration of the mismatching effect between the converter and the IF amplifier, and the optimum design procedure for the down converter. Using this theoretical method, a SHF down converter was designed and constructed. Its application is low noise receivers for satellite broadcasting. The design used the optimum image condition (the image impedance takes a low value, i.e., nearly a short). The RF band is 11.7 - 12.2 GHz, the IF band is 0.96 - 1.46 GHz, and the total noise figure is 3.3 - 3.7 dB. The noise figure is in good agreement with the (3.2 - 3.6 dB) obtained from this analysis. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Single-Gate MESFET Frequency Doublers

    Page(s): 869 - 875
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (732 KB)  

    A simple analytic model of the FET frequency doubler is used to determine the relative contributions of the various nonlinearities to harmonic generation. FET doubler conversion gain and its variation with frequency relative to the fundamental frequency available gain is also estimated. Large-signal computer simulations are used to determine the validity of the analytic model and provide further information on conversion gain and its frequency dependence. The analytic and computer predictions are compared with experimental measurements on a 4- to 8-GHz single-gate FET frequency doubler. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • P-I-N Diodes for Low-Frequency High-Power Switching Applications

    Page(s): 875 - 882
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1319 KB)  

    The development of high-power low-frequency diodes, conditions for their operation, and results measured in actual circuits are described. Harmonic distortion at 500 kHz and 2 MHz has been found to decrease with increasing diode lifetime and forward-bias current. Large reverse bias voltages are necessary at low frequencies to keep the RF voltage swing from penetrating the forward conduction region. The improvement of p-i-n diode lifetimes with thicker I-layers or with planar construction has been studied and the performance of these diodes in a routing switch is reported. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Coupling Characteristics Between Single-Mode Fiber and Square Law Medium

    Page(s): 882 - 893
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1202 KB)  

    The coupling characteristics between a single-mode fiber and a square law medium are theoretically and experimentally discussed in order to obtain the optimum coupling design for a variety of single-mode fiber optical devices using square law media. In theoretically analyzing coupling efficiency, it has been possible to evaluate a Gaussian beam, in a dielectric, which has passed through a square law medium with the help of mode-expansion technique and one of the generating functions of the Hermite polynomials. As a result, it has been possible to analytically obtain coupling efficiency even when the output beam from the single-mode fiber is off-axis and tilted. Through this analysis, it has been made clear that the ray matrix analysis used previously agrees with the analysis without the off-axis and tilt factors analyzed in this paper. The experimental results concerning the optimum coupling design, the off-axis characteristics, and the off-axis tolerances have been presented and agree well with the theoretical analysis. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Propagation in Transversely Magnetized Compressible Plasma Between Two Parallel Planes

    Page(s): 894 - 899
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (495 KB)  

    The propagation of waves in compressible single fluid macroscopic plasma between two parallel, perfectly conducting planes, with a transverse static magnetic field parallel to the boundaries is investigated. It is shown that the TE waves are not affected by either the static magnetic field or the compressibility of the plasma, while the TM wave will be affected by both. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Network Representation and Transverse Resonance for Layered Anisotropic Dielectric Waveguides

    Page(s): 899 - 905
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (727 KB)  

    First, the matrix wave impedance in an unbounded uniaxial lossless dielectric material is determined. Next, the transformation properties of the input impedance of a terminated anisotropic layer are established. It is then demonstrated that the boundary conditions in an anisotropic dielectric slab waveguide lead to a generalized transverse resonance condition involving the previously obtained matrix input impedances. Network equivalent representations are given for waveguides fabricated with dielectrics in polar and longitudinal orientations. The results show that a circuit approach to the analysis and design of planar anisotropic dielectric waveguides is feasible and practicable. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Accurate Analysis of Coupled Strip-Finline Structure for Phase Constant, Characteristic Impedance, Dielectric and Conductor Losses

    Page(s): 906 - 910
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (557 KB)  

    Propagation constant, characteristic impedance, dielectric loss, and conductor loss of coupled strip-unilateral finline is here computed for the first time. The technique of analysis is based on the assumption of hybrid wave propagation implemented through the spectral domain approach for the phase constant. A perturbation method together with the spectral analysis has been applied to find the losses. The basis functions used to approximate fields within unilateral finline gap and currents on the strip have been selected as Legendre polynomials for the unbounded field or current and trigonometric functions for bounded field or current. The Green's function matrix in the spectral domain for the two distinct planes of the coupled strip-unilateral finline has also been presented. This gives the opportunity for direct implementation in the analysis of other similar structures. The possibility of the extension of the technique to shielded stratified dielectric with distributed planar conductor within different layers has been also discussed. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Assessing the Error in a Finite Element Solution

    Page(s): 911 - 915
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (500 KB)  

    In this paper a method of error assessment for the finite element method is discussed. This idea is used to optimize grid refinement schemes both for singularities and also for handling unbounded regions. It is shown how those elements, or groups of elements, that make large contributions to the error term can be identified so that local grid refinements can he placed in the most advantageous regions. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis of a Microwave FET Oscillator Using an Efficient Computer Model for the Device

    Page(s): 915 - 917
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (291 KB)  

    This paper presents a time domain analysis of a microwave 10-GHz FET oscillator, which employs a practical and efficient computer model for the FET. Good agreement is demonstrated between the predicted and measured performance. A sensitivity analysis of the circuit is performed with respect to some of the FET parameters. This is useful information to estimate variation in production. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 100 MHz to 17 GHz Dual-Gate Variable-Gain Amplifier

    Page(s): 918 - 919
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (199 KB)  

    A simple analytical approach to wide-band amplification using commercially available dual-gate FET's has enabled an ultra-wide-band flat-gain amplifier to be built in the 100-MHz to 17-GHz bandwidth with a VSWR less than 3.5- and 15-dB gain control. A description is given, including first experimental results. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comparison of Single- and Dual-Gate FET Frequency Doublers

    Page(s): 919 - 920
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (219 KB)  

    The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Quasi-Static Characteristics of Coplanar Waveguide on a Sapphire Substrate with its Optical Axis Inclined

    Page(s): 920 - 922
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (298 KB)  

    A variational expression is presented for the line capacitance of a coplanar waveguide on a single-crystal sapphire substrate with a tilted optical axis. Numerical results are obtained by means of the Ritz procedure. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nonreciprocal Propagation Characteristics of YIG Thin Film

    Page(s): 922 - 925
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (391 KB)  

    The characteristics of an optical nonreciprocal phase shifter, with which optical circulators can be constructed, are investigated. We have measured the nonreciprocal phase shift of an appropriately magnetized yttrium iron garnet (YIG) thin film and thus confirmed experimentally that an AIR/YIG/GGG structure can function as an optical nonreciprocal phase shifter. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Patent abstracts

    Page(s): 925 - 929
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (417 KB)  

    These patent abstracts of recently issued patents of interest to microwave engineers are intended to provide the minimum information necessary for readers to detennine if they are interested in examining the patent in more detail. Complete copies of patents are available for a small fee by writing: U.S. Patent and Trademark Office, Box 9, Washington, DC, USA. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Advertisement]

    Page(s): 930
    Save to Project icon | Request Permissions | PDF file iconPDF (223 KB)  
    Freely Available from IEEE
  • Membership Application, IEEE Microwave Theory and Techniques Group

    Page(s): 931
    Save to Project icon | Request Permissions | PDF file iconPDF (97 KB)  
    Freely Available from IEEE
  • [Back cover - Jun.1982 Transactions]

    Page(s): b1 - b2
    Save to Project icon | Request Permissions | PDF file iconPDF (76 KB)  
    Freely Available from IEEE

Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dominique Schreurs
Dominique.Schreurs@ieee.org

Editor-in-Chief
Jenshan Lin
jenshan@ieee.org