Electron Devices, IEEE Transactions on
Issue 3 • Date March 1991
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Displaying Results 1 - 25 of 35
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Comments on "Computer-aided simulation study of photomultiplier tubes" by M.E. Zaghloul
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PDF (172 KB)
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Rapid electrical measurements of back oxide and silicon film thickness in an SOI CMOS process
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PDF (268 KB)
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Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry
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PDF (592 KB)
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UV-O3 and dry-O2: Two-step-annealed chemical vapor-deposited Ta2O5 films for storage dielectrics of 64-Mb DRAMs
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PDF (788 KB)
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New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method
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PDF (764 KB)
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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFET's
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PDF (1072 KB)
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Quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15 /GaAs heterostructure field-effect transistors
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PDF (256 KB)
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Supply voltage design tradeoffs between speed and NMOSFET reliability of half-micrometer BiCMOS gates
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PDF (636 KB)
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Material and electrical properties of ultra-shallow p+-n junctions formed by low-energy ion implantation and rapid thermal annealing
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PDF (1440 KB)
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Field emission triodes
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PDF (436 KB)
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Electrical isolation design rule for GaAs integrated circuits fabricated on semi-insulating substrates
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PDF (660 KB)
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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
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PDF (1200 KB)
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Capacitance-voltage measurements on metal-SiO2-diamond structures fabricated with (100)- and (111)-oriented substrates
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PDF (660 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
