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Microwave and Millimeter-Wave Monolithic Circuits

Issue 1 • May 31 1983-June 1 1983

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  • [Front cover - 1984 MWSYM]

    Publication Year: 1984, Page(s): f1
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  • Symposium Steering Committee (1984 [MWSYM])

    Publication Year: 1984, Page(s):iii - iv
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  • Author Index (1984 [MWSYM])

    Publication Year: 1984, Page(s): ix
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  • IEEE 1984 Microwave and Millimeter-Wave Monolithic Circuits Symposium - Digest of papers [front matter]

    Publication Year: 1984, Page(s):i - ii
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  • Contents

    Publication Year: 1984, Page(s):vii - viii
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  • Welcome [1984 MWSYM]

    Publication Year: 1984, Page(s): vi
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  • The Technical Program (1984 [MWSYM])

    Publication Year: 1984, Page(s): v
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  • [Back cover - 1984 MWSYM]

    Publication Year: 1984, Page(s): b1
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  • Monolithic Gallium Arsenide I-Q Demodulator

    Publication Year: 1984, Page(s):14 - 18
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The monolithic gallium arsenide demodulator described herein demodulates the in-phase (I) and quadrature (Q) components of two signal channels on carriers identical in frequency but in quadrature phase relationships. The present demodulator is shown to be closely matched because of close matching of component parameters achieved by fabricating the entire demodulator on a single gallium arsenide ch... View full abstract»

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  • Wideband S-C Band Monolithic Phase Shifter

    Publication Year: 1984, Page(s):11 - 13
    Cited by:  Papers (10)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (200 KB)

    A wideband monolithic phase shifter operating in the 2-8 GHz frequency range is reported. Six GaAs FETs per bit are used as switch elements in a bridge configuration which alternatively becomes a highpass or a low-pass section. Their low impedance state is modeled as a resistor, the high impedance state as a combination of capacitors and resistors. In the design approach, the high impedance state ... View full abstract»

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  • Calibration Methods for Microwave Wafer Probing

    Publication Year: 1984, Page(s):78 - 82
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    A new level of accuracy in the measurement of microwave parasitic has been achieved, due to the combined development of microwave wafer probes and on-wafer impedance standards. Repeatable losses and reflections in the probes can be readily removed from measured data, but radiation losses and crosstalk cannot be corrected and must be minimized. Oneport and twoport on-wafer standards for several pro... View full abstract»

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  • An Analog X-Band Phase Shifter

    Publication Year: 1984, Page(s):6 - 10
    Cited by:  Papers (17)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    A hybrid-coupled phase shifter has been fabricated monolithically using reverse-biased Schottky varactor diodes to continuously vary phase with an analog control voltage. A phase shift of 105° is obtained at X-Band, and wtth design improvements a phase shift of 180° over the full 8-12.4 GHz is expected. Phase shift variation with power level is reduced by using back-to-back varactors on ... View full abstract»

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  • Highly Accurate Design of Spiral Inductors for MMIC's with Small Size and High Cut-Off Frequency Characteristics

    Publication Year: 1984, Page(s):91 - 95
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    High precision experimental and theoretical procedures are presented for obtaining very compact inductors (diameter 80 to 200 µm) with values up to 5 nH and cut-off frequencies ranging from 20 to 100 GHz for L < 2 nH. The maximum phase and amplitude measurement error is of the order to +- 2 degrees and 1% respectively with typical measurement reproducibility of 0.1%. A new lumped element t... View full abstract»

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  • On-Chip Pulse Transmission in Very High Speed LSI/VLSIS

    Publication Year: 1984, Page(s):29 - 33
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    Using single and coupled metal-insulator-semiconductor (MIS) microstrip line models for interconnection, on-chip pulse delay and crosstalk in very high-speed LSI/VLSIs, are analyzed. The result shows (1) inapplicability of lumped capacitance approximation for interconnection in very high-speed LSI/VLSIs (t pd <100 ps), (2) superiority of semi-insulating substrates over semi-conductin... View full abstract»

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  • GaAs Monolithic Frequency Doublers with Series Connected Varactor Diodes

    Publication Year: 1984, Page(s):74 - 77
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for the first time. Output powers of 150 mW at 36.9 GHz with 24% efficiency and 300 mW at 24.8 GHz with 18% efficiency have been obtained. Peak efficiencies of 35% at output power levels near 100 mW have been achieved at both frequencies. Both K-band and Ka-band frequency doublers are derived from a lowe... View full abstract»

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  • A Microwave Phase and Gain Controller with Segmented-Dual-Gate MESFETs in GaAs MMICs

    Publication Year: 1984, Page(s):1 - 5
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    A novel segmented-dual-gate MESFET device which provides precise gain control over broad microwave bandwidth by using prescribed gate-width-ratio is presented. The digitally-controlled precision microwave gain scaler has potential application as an ultra-wide band microwave attenuator or active microwave phase shifter. The design and test results of GaAs MMIC active attenuator and hybrid phase shi... View full abstract»

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  • High Efficiency GaAs MBE Power FETs for Ka-Band

    Publication Year: 1984, Page(s):87 - 90
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    Submicron gate length, 300 micron gate width GaAs FETs were fabricated on MBE material using direct write e-beam lithography. Evaluation of the devices in a Ka-band test fixture with fin line transitions resulted in an amplifier output power of 110 mw with 11 percent power added efficiency at 30 GHz. At 2.9 dB gain the power per unit gate width is .46 W/mm referenced to the device. This is the hig... View full abstract»

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  • A Manufacturable GaAs MMIC Amplifier with 10 GHz Bandwidth

    Publication Year: 1984, Page(s):37 - 40
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    A two stage feedback amplifier has been developed for the 2 to 12 GHz band. The measured gain is 10 +- 1 dB with 2.5:1 input and 1.7:1 output VSWR. The chip size is less than 0.5 x 1.0 mm2 and it includes complete RF and bias circuitry. The amplifier also has AGC capability with more than 25 dB of gain control. View full abstract»

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  • A Monolithic Multi-Stage 6-18 GHz Feedback Amplifier

    Publication Year: 1984, Page(s):45 - 48
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    A design approach and circuit modeling method, which includes parasitic effects, will be presented for a two-stage monolithic feedback amplifier with enhanced high frequency performance. Using the proposed approach, a 6-18 GHz amplifier has been demonstrated with low input/output VSWR, respectable noise figure (6 dB) and a minimum gain of 8 dB. View full abstract»

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  • Si-Monolithic Microwave Prescaler IC

    Publication Year: 1984, Page(s):24 - 28
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    This paper describes a Si Monolithic microwave Prescaler IC with a toggle frequency of 3.9 GHz. To optimize circuit parameters and to determine the dominant transistor parameters, precise computer simulation has been used. An improved IC manufacturing process was developed to achieve the desired parameters and to obtain a transistor cut-off frequency of 10 GHz. View full abstract»

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  • 94 GHz Planar GaAs Monolithic Balanced Mixer

    Publication Year: 1984, Page(s):70 - 73
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    A 94 GHz GaAs monolithic balanced mixer in a Planar microstrip integrated circuit configuration has been demonstrated. A double sideband noise figure of 5.6 dB has been achieved at 94.5 GHz. This includes a 1.5 dB noise contribution of the IF preamplifier. The chip size is 0.076 x .034 inch with integral beam leads. View full abstract»

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  • Low Noise High Electron Mobility Transistors

    Publication Year: 1984, Page(s):83 - 87
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    Sub-half-micron gate length High Electron Mobility Transistors (HEMT) were fabricated by direct-write electron beam lithography for low noise EHF amplifiers. Modulation-doped epitaxial structures were grown by molecular beam epitaxy having 8,000 cm2/ V-sec room temperature and 77,600 cm /sup2// V-sec liquid nitrogen Hall mobility for 10/sup12/ electrons/cm2 . Gate lengths as ... View full abstract»

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  • Transformer Coupled High-Density Circuit Technique for MMIC

    Publication Year: 1984, Page(s):34 - 36
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    A circuit technique that employs a transformer wrapped around an active device to increase circuit density has been demonstrated with key building blocks for sensor systems. This technique is completely compatible with planar fabrication processes used in the fabrication of high-density and high-yield circuits. Measured results from a wraparound transformer-FET combination are compared with a simi... View full abstract»

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  • A Miniature 2-18 GHz Monolithic GaAs Distributed Amplifier

    Publication Year: 1984, Page(s):41 - 44
    Cited by:  Papers (13)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    A 2-18 GHz monolithic GaAs distributed amplifier has been developed with over 6dB gain +- 0.5 dB gain ripple, less ttlan 2.0 input and output VSWR less than 7.5 dB noise figure, and greater than 17 dBm power output capability. The amplifier is designed with dual-gate GaAs FET's and measures .75 mm by .85 mm (.64 mm2). The small size insures high circuit yield and makes the part cost eff... View full abstract»

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  • An 8-18 GHz Monolithic Two-Stage Low Noise Amplifier

    Publication Year: 1984, Page(s):49 - 51
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    A wideband monolithic low noise amplifier which covers the frequency band from 8 to 18 GHz has been designed and fabricated. The amplifier has a noise figure less than 4.3 dB and an associated gain of 8.5 dB across the entire band. A revised version of the amplifier which has a design goal of sub-four dB noise figure and an associated gain of 12 dB has been processed. Measured data will be present... View full abstract»

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