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Browse Journals & Magazines > Electron Device Letters, IEEE ... Volume 23 Issue 11

Electron Device Letters, IEEE

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Electron Device Letters, IEEE

Issue 11 • Date Nov. 2002

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Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

A new Pt/oxide/In/sub 0.49/Ga/sub 0.51/P MOS Schottky diode hydrogen sensor

Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N₂O

Boron retarded diffusion in the presence of indium or germanium

Effect of Al inclusion in HfO₂ on the physical and electrical properties of the dielectrics

Novel self-convergent programming method using source-induced band-to-band hot electron injection

Ballistic MOSFET reproduces current-voltage characteristics of an experimental device

Extraction of Si-SiO₂ interface trap densities in MOS structures with ultrathin oxides

Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics

Multilevel vertical-channel SONOS nonvolatile memory on SOI

Impact of the trapping of anode hot holes on silicon dioxide breakdown

50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

Temperature dependence of hot-carrier degradation in silicon-on-insulator dynamic threshold voltage MOS transistors

Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"

Correction to "Trench Isolation Step-Induced (TRISI) Narrow Width Effect on MOSFET"

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