Electron Devices, IEEE Transactions on
Issue 1 • Date Jan 1991
Society Sponsor
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Displaying Results 1 - 25 of 25
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A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's
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PDF (760 KB)
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New approach to resolution limit and advanced image formation techniques in optical lithography
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PDF (864 KB)
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Overshoot-controlled
RLC interconnections |
PDF (868 KB)
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Non-quasi-static models including all injection levels and DC, AC, and transient emitter crowding in bipolar transistors
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PDF (880 KB)
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Characterization of ultra-shallow p+-n junction diodes fabricated by 500-eV boron-ion implantation
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PDF (488 KB)
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Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film
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PDF (500 KB)
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Disposable polysilicon LDD spacer technology
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PDF (672 KB)
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Characterization and implementation of self-aligned TiSi2 in submicrometer CMOS technology
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PDF (676 KB)
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Analog dynamic random-access memory (ADRAM) unit cell implemented using a CCD with feedback
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PDF (200 KB)
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The design and characterization of nonoverlapping super self-aligned BiCMOS technology
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PDF (932 KB)
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MOSFET doping profiling
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PDF (548 KB)
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Identification of a corner tunneling current component in advanced CMOS-compatible bipolar transistors
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PDF (348 KB)
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Electrical characterization of junctions and bipolar transistors formed with in situ doped low-temperature (800°C) epitaxial silicon
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PDF (808 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
