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Quantum Electronics, IEEE Journal of

Issue 1 • Date January 1969

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Page(s): 0
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    Freely Available from IEEE
  • Radial profile of neon 1s5atoms in a He-Ne active discharge and their lens effect on lasing at 6401 Å

    Page(s): 21 - 29
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    A laser interferometer was used to determine the spatial distribution of the neon1s_{5}metastable states in an auxiliary active discharge, identical to the one used for a He-Ne laser at 6401 Å. The resulting distribution was a parabola, which crossed zero at the discharge tube walls. Measurements of the 6401-Å spot size were used to determine the axial metastable density from the calculation of the gas lens effect associated with this radial distribution. Excellent agreement was obtained between the two methods. The results show that the lens effect of these metastables is responsible for the anomalous appearance of lasering at 6401 Å in near-hemispherical cavities. For such resonators, the effective radius of curvature of the spherical mirror is increased while the equivalent mirror spacing is decreased; thus, the diffraction losses at 6401 Å are significantly reduced. Preliminary results are also given to show that the lens effect is more pronounced for the higher order modes. View full abstract»

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  • Characteristics of a single-frequency sealed-off CO2amplifier

    Page(s): 48 - 49
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    The measured small-signal gain of 4.8 dB/m for a sealed-off COs amplifier with average bore of 25 mm compares favorably with the highest gain published for a flowing-gas type. The saturated gain for this 9-meter amplifier was 1.2 dB/m with 95-watts output when sealed off and 1.3 dB/m with 110-watts output for a flowing-gas system. View full abstract»

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  • [Back cover]

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    Freely Available from IEEE
  • The singly ionized krypton ion laser

    Page(s): 38 - 44
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    Basic data on the Kr+ laser such as the population densities, pumping rates, lifetimes, etc., of all the upper laser states and those states that contribute significantly to the populations of these upper laser states have been obtained. These results were obtained on the basis of the calculated EinsteinAcoefficients and the measured spontaneous emission data for the Kr+ laser discharge. The implications of these results on the further development and the characteristics of the Kr+ laser are also discussed in some detail. It is shown, for example, that the Kr+ laser is potentially capable of producing substantial amounts of CW laser power in the red at current levels below the threshold of the Kr+ discharge instability. View full abstract»

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  • Resonant modes of GaAs junction lasers

    Page(s): 29 - 37
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    The resonant modes of GaAs junction lasers are obtained from a proposed model and compared with experimental results. Theoretical results are based on an assumed laser medium whose dielectric constant varies both along and perpendicular to the junction plane. The frequency separations of the transverse modes are found to be in very good agreement with presented high-resolution spectral measurements of stripe-geometry laser radiation. Furthermore, the theoretical field distributions are also in good agreement with observed transverse field variations reported previously. The laser output spectrum usually shows a number of "satellites" located adjacent to each longitudinal (Fabry-Perot) resonance. It is shown that each satellite represents the frequency of a transverse resonance having a different mode number along the junction plane and a corresponding Hermite-Gaussian intensity profile along the plane. Theory shows that the frequency separation of two adjacent satellites is related to the falloff rate of the dielectric constant along the junction plane. This focusing is measured from the intensity profile of a far-field pattern. From this information, the theoretical frequency separation is calculated and found to agree well with the measured separation of 6.4 GHz (0.15 Å). View full abstract»

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  • Pulse shapes and spatial modes in Raman lasers

    Page(s): 1 - 6
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    The steady-state performance of a Raman laser oscillator can be described by a simple standing-wave theory. This theory has been extended to take into account the time variation of the exciting laser pulse. The resulting differential equation is nonlinear, but analytic expressions can be obtained in the limiting cases of small-signal amplification and saturation. Experimental results in H2gas are compared with theory and show good agreement. The phase-matching conditions appropriate to the Raman oscillator are derived and verified experimentally. View full abstract»

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  • Photochromic materials for quantum electronics

    Page(s): 12 - 17
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    The characteristics of idealized photochromic materials are defined. The optical properties of rare-earth-doped CaF2and transition-metal-doped SrTiO3photochromic materials are outlined. The operational parameters of these inorganic photochromic materials pertinent to electrooptic applications are described. View full abstract»

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  • Optical and EPR studies of photochromic SrTiO3doped with Fe/Mo and Ni/Mo

    Page(s): 17 - 21
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    Large reversible photochromic changes were observed in SrTiO3double doped with Mo and either Fe or Ni. The photochromic absorption is induced by irradiation in the vicinity of 4000 Å and decays thermally in minutes or can be bleached to its original state by long wavelength radiation. A model is presented in which a charge is transferred between the Fe and Mo ions via the conduction or valence bands. Optical absorption, heat treatment, and EPR data are presented, which support the model. View full abstract»

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  • Bismuth-doped Pb1-xSnxTe diode lasers with low-threshold currents

    Page(s): 50 - 51
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    Diode lasers have been fabricated from Bi-doped Pb1-xSnxTe with0.24 leq x leq 0.27, which have threshold current densities as low as 1400 A.cm-2at 77°K and 71 A.cm-2at 12°K, whereas diodes fabricated from undoped Pb1-xSnxTe> in this composition range did not exhibit laser action for current densities up to 30 000 A.cm-2at 77°K and had threshold current densities greater than 200 A.cm-2at 12°K. Bi doping also results in a reduction in the annealing times required to form suitablep-njunctions from several weeks to a few days. These effects can be tentatively related to an increased electron concentration in then-type layer due to the addition of Bi, a donor impurity. A curve ofEgversusxfor0 leq x leq 0.4, which agrees with predictions, is presented. View full abstract»

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  • Observation of phase pulsations and combination tones in the output of a CW gas laser

    Page(s): 7 - 11
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    Phase pulsations between normal frequencies and combination tones can be observed using a scanning interferometer. Results are in substantial agreement with Lamb's theory for three-normal-frequency operation. Isolated combination tones have also been observed. View full abstract»

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  • Standing waves and single-mode room-temperature laser emission from electron-beam-pumped cadmium sulfide

    Page(s): 44 - 47
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    A thin crystal of CdS produced well-defined standing waves in spontaneous light emission when end-pumped by an electron beam at excitation levels six orders of magnitude below that necessary for stimulated emission. Single-frequency mode output was observed in stimulated emission at 5205 Å at room temperature. At 77°K and at excitation levels well above threshold, laser emission was observed to occur continuously over a spectral range of nearly 200 Å, from 4960 to 5150 Å. View full abstract»

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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University