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Journal of Lightwave Technology

Issue 3 • March 1987

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Displaying Results 1 - 20 of 20
  • [Front cover and table of contents]

    Publication Year: 1987, Page(s): 0
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    Freely Available from IEEE
  • Foreword

    Publication Year: 1987, Page(s): 289
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    Freely Available from IEEE
  • Guest editorial

    Publication Year: 1987, Page(s):290 - 292
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    Freely Available from IEEE
  • Sinusoidal and digital high-speed modulation of p-type substrate mass-transported diode lasers

    Publication Year: 1987, Page(s):300 - 304
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1594 KB)

    The modulation characteristics of GaInAsP diode lasers grown onp-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made onn-type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured w... View full abstract»

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  • An APD/FET optical receiver operating at 8 Gbit/s

    Publication Year: 1987, Page(s):344 - 347
    Cited by:  Papers (26)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1263 KB)

    A high-sensitivity optical receiver has been designed for a bit rate of 8 Gbit/s and wavelengths of1.3-1.55mum. The receiver uses a 60-GHz gain-bandwidth-product InGaAs/InGaAsP/InP avalanche photodiode followed by a high-impedance hybrid GaAs MESFET preamplifier. A bandwidth of 6.9 GHz was measured, with flat frequency response ±2 dB being obtained through the use of a 3-tap transv... View full abstract»

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  • Silicon bipolar decision circuit handling bit rates up to 5 Gbit/s

    Publication Year: 1987, Page(s):348 - 354
    Cited by:  Papers (9)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2601 KB)

    A high-speed silicon bipolar decision circuit is presented which operates up to 5 Gbit/s. It may serve as a subcomponent for integration in a regenerator/repeater circuit for multi-gigabit fiber-optic trunk lines. The circuit was implemented in a standard bipolar silicon technology featuring oxide-wall isolation, 2-μm emitter stripe widths, and a transit frequency of 9 GHZ at... View full abstract»

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  • [Back cover]

    Publication Year: 1987, Page(s): c4
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    Freely Available from IEEE
  • Gigahertz signal processing using reflex optoelectronic switching matrices

    Publication Year: 1987, Page(s):398 - 402
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1648 KB)

    The application of reflex optoelectronic switching matrices (ROSM) to signal processing in the gigahertz region is analyzed. Various signal processing functions such as delay generation, loop filtering, word generation/detection, integration, and digital to analog conversion are identified and their respective realizations in a ROSM are presented. It is found that for dedicated signal processing f... View full abstract»

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  • The application of microwave techniques in lightwave systems

    Publication Year: 1987, Page(s):293 - 299
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2168 KB)

    Microwave techniques have a significant role in advancing the state-of-the-art of lightwave systems. Applications include the analysis and design of structures to support lightwave propagation, the development of devices and circuits to modulate, demodulate, and process microwaves bandwidth signals on lightwave carriers, and the development of circuits to process microwave bandwidth baseband signa... View full abstract»

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  • Decision and clock recovery circuits for gigahertz optical fiber receivers in silicon NMOS

    Publication Year: 1987, Page(s):367 - 372
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1952 KB)

    New design techniques for implementing a data and clock recovery circuit on a silicon NMOS monolithic IC employing 1-μm feature sizes, and operating at speeds greater than 2 Gbit/s are described. A clocked comparator can resolve a 60-mV peak-to-peak signal into logic levels at 2 Gbit/s. The circuit can tolerate a 100° phase margin between the incoming signal and the clock. An NRZ data ra... View full abstract»

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  • GaAs monolithic integrated optical preamplifier

    Publication Year: 1987, Page(s):355 - 366
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3464 KB)

    A GaAs monolithic integrated optical preamplifier has been developed based on the transimpedance principle. By associating the amplifier with an external p-i-n diode, a sensitivity of -38 dBm was measured at 140 Mbits/s and 10-9error rate with a signal wavelength of 1.3 μm. A TiWSiN-integrated technology was used to realize larger than 100-kω feedback resistors and gate leakag... View full abstract»

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  • A 2-GHz optical receiver using commercially available components

    Publication Year: 1987, Page(s):340 - 343
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1312 KB)

    A 2-GHz optical receiver consisting of a Ge avalanche photodiode and a four-stage bipolar transistor amplifier is described. Commercially available components are used. Characterization and optimization of the optical receiver were carried out by computer simulation. Responsivity, noise equivalent power, and group delay were measured up to 2.3 GHz. View full abstract»

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  • Investigation of a new optoelectronic CW microwave source

    Publication Year: 1987, Page(s):388 - 397
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3408 KB)

    A new 10-GHz microwave source which utilizes picosecond photoconductors is presented. Experimental results are given, including details of a comprehensive noise study. Such a source can be extended to millimeter-wave frequencies, with application to monolithic active phased array antenna elements, high speed data processing, and transceivers. View full abstract»

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  • Analysis of microwave characteristics of photoconductive IC structures

    Publication Year: 1987, Page(s):325 - 339
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4888 KB)

    A one-dimensional analytic solution for the microwave photoresponse of an optically modulated semiconductor channel is presented. This extends the existing treatments by including the effects of nonuniform channel cross sections and conductivity, nonuniform optical illumination, field-dependent mobilities, nonzero dielectric relaxation times, arbitrary electrical and optical excitation frequencies... View full abstract»

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  • Impedance properties and broad-band operation of GaAs photoconductive detectors

    Publication Year: 1987, Page(s):320 - 324
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1864 KB)

    The impedance properties of GaAs ion-implanted photoconductive detectors reveal an interesting effect. The reflection coefficient S11of the photoconductors shows the detector impedance to be a constant resistance with no reactive component over a bandwidth of more than 1.5 GHz at a particular bias voltage. Broad-band matching to the detector load and transit time limited detector respon... View full abstract»

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  • Transmission line aspects of the design of broad-band electrooptic traveling-wave modulators

    Publication Year: 1987, Page(s):316 - 319
    Cited by:  Papers (21)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1080 KB)

    This paper proposes a two-layer traveling-wave type electrooptic modulator structure to maximize modulation bandwidth from transmission line aspects. This structure can be designed to satisfy the velocity matching and impedance matching condition simultaneously. A design method for this structure is discussed. View full abstract»

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  • System characteristics of direct modulated and externally modulated RF fiber-optic links

    Publication Year: 1987, Page(s):380 - 387
    Cited by:  Papers (73)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2480 KB)

    RF fiber-optic links have numerous applications to microwave systems. To fully exploit their usefulness, and RF system designer must understand their properties in terms of the performance parameters that are used to describe the terminal properties of other RF components such as loss, signal-to-noise, linearity, and dynamics. This review paper details the performance of direct and external modula... View full abstract»

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  • Large signal nonlinear distortion prediction for a single-mode laser diode under microwave intensity modulation

    Publication Year: 1987, Page(s):305 - 315
    Cited by:  Papers (81)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2376 KB)

    The large-signal nonlinear distortions from a directly-modulated single-mode GaAlAs laser diode are closely predicted by using a large-signal equivalent circuit model. Criteria for determining intrinsic parameter values are described. The simulations are done in the time domain and then transformed to the frequency domain by FFT. Second harmonics, two-tone third-order intermodulation, multicarrier... View full abstract»

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  • The optical control of IMPATT oscillators

    Publication Year: 1987, Page(s):403 - 411
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2328 KB)

    This paper describes methods of controlling the frequency of IMPATT oscillators using optical rather than electrical signals. Analytic theories of optical tuning and injection locking are presented. Results from a comprehensive large signal computer model of the optically controlled IMPATT oscillator are given, illustrating the importance of the composition of the optically generated current on th... View full abstract»

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  • Optimum design of a 4-Gbit/s GaAs MESFET optical preamplifier

    Publication Year: 1987, Page(s):373 - 379
    Cited by:  Papers (21)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1536 KB)

    An analysis for determining the optimum MESFET gate width to optimize the sensitivity of a high-speed optical preamplifier is presented. A full MESFET model is employed including correlated gate and drain noise sources. The design of an optimum sensitivity monolithic shunt feedback amplifier, including stability requirements, is investigated. The results show that the optimum gate width for minimi... View full abstract»

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Aims & Scope

The JOURNAL OF LIGHTWAVE TECHNOLOGY is comprised of original contributions, both regular papers and letters, covering work in all aspects of optical guided-wave science, technology, and engineering. Manuscripts are solicited which report original theoretical and/or experimental results which advance the technological base of guided-wave technology. Tutorial and review papers are by invitation only. Topics of interest include the following: fiber and cable technologies, active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; and systems, subsystems, new applications and unique field trials. System oriented manuscripts should be concerned with systems which perform a function not previously available, out-perform previously established systems, or represent enhancements in the state of the art in general.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Peter J. Winzer
Alcatel-Lucent Bell Labs