IEEE Journal of Quantum Electronics

Issue 4 • April 1968

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Displaying Results 1 - 25 of 40
  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): 0
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  • Introduction - 1967 Semiconductor laser conference

    Publication Year: 1968, Page(s):109 - 110
    Cited by:  Papers (1)
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  • Effect of band shapes on carrier distribution at high temperature

    Publication Year: 1968, Page(s):113 - 118
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (695 KB)

    This paper indicates both experimentally and graphically how the distribution of carriers changes above a critical temperature Tc, which is related to the density of states ρ in the band tails. Thus,kT_{c} = E_{0}, whererho = rho_{0} exp (DeltaE/E_{0}). The emission spectrum shifts with changing excitation (band filling) at lower temperatures (T < T_{c... View full abstract»

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  • Temperature dependence of emission efficiency and lasing threshold in laser diodes

    Publication Year: 1968, Page(s):119 - 122
    Cited by:  Papers (69)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (459 KB)

    It is found that in GaAs1-xPxinjection lasers both the spontaneous emission efficiency η and the laser thresholdjvary exponentially with the temperatureT: eta = eta_{0} exp(-T/theta_{1})andj = j_{0} exp(T/theta_{2}). θ1and θ2are usually nearly equal and range between 50 and 110°K. The behavior of the e... View full abstract»

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  • Optical losses and efficiency in GaAs laser diodes

    Publication Year: 1968, Page(s):122 - 125
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    Optical gain and losses of GaAs laser diodes were deduced from the length dependence of the threshold current density and the differential external quantum efficiency at 77 and 300°K. It has been confirmed that the optical gain is proportional to the threshold current density Jt; and the optical losses are given by the sum of current independent termalpha_{0}', and curre... View full abstract»

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  • Electrical model of the injection laser

    Publication Year: 1968, Page(s): 131
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (124 KB)

    The simplest electrical model of the injection laser assumes that the active layer, the layer in which spontaneous and stimulated radiative recombination take place, is a homogeneous layer. The only parameters of such an electrical model are the thickness of the active layer, and the electron and hole concentrations and quasi-Fermi levels. If such a model is combined with an optical model with no<... View full abstract»

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  • Transient temperature distribution in diode lasers and the time duration of the output pulse at 300°K

    Publication Year: 1968, Page(s):135 - 140
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (654 KB)

    A relatively simple method for obtaining the approximate temperature profile across a GaAs diode laser during a short, rectangular current pulse is described. The method, based on consideration of the thermal diffusion of an initially heated slab parallel to thep-njunction, allows the inclusion of the thickness and distribution of more than one heat source. Results are valid for short t... View full abstract»

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  • The thermal properties of gallium arsenide laser structures

    Publication Year: 1968, Page(s):140 - 143
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (388 KB)

    The development of high-power junction lasers has resulted in the development at many laboratories of laser structures which will enable devices to operate at high mean power or continuously at the highest possible temperature. However, little attention has been paid to the measurement of the thermal properties of the resulting structures. Although CW operation does not, in general, give the maxim... View full abstract»

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  • Characteristics of GaAs lasers near room temperature

    Publication Year: 1968, Page(s):151 - 154
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (463 KB)

    The efficiency and threshold of GaAs lasers can be affected by a delay occurring between the application of a current pulse and the laser output. The delays may be some tenths of a microsecond in certain diffused junction lasers when operated near room temperature, e.g., when the donor substrate dopant is selenium with a concentration of the order of 1018atoms per cm3. No suc... View full abstract»

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  • Temperature behavior of stimulated emission delays in GaAs diodes and a proposed trapping model

    Publication Year: 1968, Page(s):155 - 160
    Cited by:  Papers (40)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (732 KB)

    The delay time between the application of a current pulse and the onset of coherent stimulated emission has been investigated for several of our diffused GaAs junction lasers from 77°K to above room temperature. A "transition temperature" Ttwas found for most diodes above which the delays are long (of the order 10-7seconds) in contrast to the 1- or 2-ns delay found below... View full abstract»

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  • Internal Q-switching in GaAs junction lasers

    Publication Year: 1968, Page(s): 163
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (136 KB)

    InternallyQ-switched light pulses have been obtained from junction lasers. It is believed that this is a completely new observation for semiconductor lasers. Using specially fabricated diodes, narrow bursts of light were detected immediately after the termination of the injection current pulse. The effect persists for a wide variation in the length of the current pulse, from less than 2... View full abstract»

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  • Spikes in the light output of room temperature GaAs junction lasers

    Publication Year: 1968, Page(s): 164
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (112 KB)

    Observations of the light intensity of pulsed, GaAs injection lasers at room temperature have revealed a regular, damped spiking behavior. The lasers were made by diffusing Zn into ann-type substrate. A stripe contact permits the excitation of only a very narrow region of the junction. The spiking was most clearly observed with a rectangular current pulse of 50 ns in width and a 0.5-ns ... View full abstract»

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  • Theory of transverse modes in GaAs junction lasers

    Publication Year: 1968, Page(s): 167
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (137 KB)

    The resonant frequencies of a proposed laser model have been calculated and compared with high-resolution (0.1Å) spectral measurements. It is believed that for the first time a good agreement between theoretical and experimental results has been obtained for the frequency separation of transverse modes. The laser resonances are characterized by three mode numbers (m, n, q), where View full abstract»

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  • Noise in semiconductor lasers

    Publication Year: 1968, Page(s): 168
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (107 KB)

    It has been demonstrated experimentally and theoretically from first principles that for semiconductor lasers the complex light-field amplitude obeys a Van der Pol equation with a noisy driving term. This noise source is mainly due to the fluctuations of the atomic dipole moments, while the population fluctuations do not strongly influence the noise properties of the light amplitude and phase. In ... View full abstract»

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  • Noncatastrophic degradation of GaAs lasers under CW operation

    Publication Year: 1968, Page(s):173 - 175
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (529 KB)

    Three types of noncatastrophic degradation have been observed during CW life tests of GaAs injection lasers at 77°K. First, when operated submerged in liquid nitrogen, a comparatively rapid decrease occurs in the power output. This effect appears to be due to the liquid nitrogen environment and is reversible. This phenomenon has not been observed to start until the laser is energized, which s... View full abstract»

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  • Multilayer GaAs injection laser

    Publication Year: 1968, Page(s):176 - 179
    Cited by:  Papers (17)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (486 KB)

    Experimental data are presented for multijunction GaAs lasers made by vapor-phase epitaxial growth in the form ofp-n-p-n-p-nstructures. The overall thickness of the four inside layers was 5 microns for the multilayer material for which experimental data are given. The diodes made from this material exhibited current-controlled negative-resistance characteristics. The emitted output beam... View full abstract»

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  • Observations concerning self-damage in GaAs injection lasers

    Publication Year: 1968, Page(s): 176
    Cited by:  Papers (5)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (125 KB)

    A study has been made of the gradual degradation in the output of GaAs lasers at 300°K. The process of catastrophic degradation, which involves mechanical facet damage, has been previously described. The lasers investigated were fabricated by Nelson using the solution regrowth method. Typically, the lasers were 10 mils long and 5 mils wide and were not provided with reflective coatings. We ha... View full abstract»

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  • Stimulated emission from bulk field-ionized GaAs

    Publication Year: 1968, Page(s):179 - 185
    Cited by:  Papers (15)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (883 KB)

    High-field domains passing throughn-type gallium arsenide pulsed above a critical field produce electron-hole pairs by impact ionization, resulting in emission of recombination radiation of band gap energy. Specimens have been made in a configuration that allows intense ionization to be produced at 78°K in material having initial electron densities of the order of5 times 10^{1... View full abstract»

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  • Some characteristics of electron-beam pumped GaAs lasers

    Publication Year: 1968, Page(s):195 - 198
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (439 KB)

    The threshold current density of an electron-beam pumped GaAs laser is sensitively dependent upon the profile of the electron beam. Minimum power threshold current density is obtained with the excitation far above threshold value at the center of the Fabry-Perot cavity and with vanishingly small values at the ends. Threshold current density is also dependent upon beam voltage. For voltages of the ... View full abstract»

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  • Far-field patterns of electron-beam pumped semiconductor lasers

    Publication Year: 1968, Page(s): 198
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (122 KB)

    Laser action is described for total internal reflection modes such that the far-field pattern is a circular ring surrounding the crystal in a plane perpendicular to the rectangular cavity faces. A number of recent experiments have shown that this far-field pattern can be observed in GaAs samples as well as in ZnO and CdS. Experiments are reported for single crystals at a temperature of 77°K p... View full abstract»

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  • On the influence of crystal orientation on solution-grown GaAs laser diodes

    Publication Year: 1968, Page(s):201 - 204
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (690 KB)

    Solution-grown GaAsp-njunctions were formed simultaneously using three differently oriented wafers, namely, the View full abstract»

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  • Synthesis of electrooptic modulators for amplitude modulation of light

    Publication Year: 1968, Page(s):209 - 221
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1388 KB)

    A technique is described for synthesizing electrooptic amplitude modulators having arbitrary modulation characteristics. The technique is an adaptation of the procedure of Ammann and Yarborough for synthesizing naturally birefringent networks. The desired amplitude-transmission versus applied-voltage functionK(upsilon)of the modulator is written as an exponential series containing a fin... View full abstract»

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  • Unstable optical resonators and waveguides

    Publication Year: 1968, Page(s):229 - 230
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (174 KB)

    First Page of the Article
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  • Electrooptic effect in trigonal selenium at 1.15 microns

    Publication Year: 1968, Page(s): 234
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (162 KB)

    The clamped electrooptic coefficient r11was measured at 1.15 microns for a selenium crystal grown from an aqueous sulfide solution. The value obtained forn_{1}^{3}r_{11}is8.9 times 10^{-11}m/V and, depending on the value used for n1, the value for r11ranges between 5.7 and3.2 times 10^{-12}m/V. These data indicate modulating efficie... View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): 0
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    Freely Available from IEEE

Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong