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Quantum Electronics, IEEE Journal of

Issue 1 • Date January 1966

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Displaying Results 1 - 5 of 5
  • [Front cover and table of contents]

    Publication Year: 1966 , Page(s): 0
    Save to Project icon | Request Permissions | PDF file iconPDF (160 KB)  
    Freely Available from IEEE
  • Efficient high energy laser radiation utilizing a coaxial optical pump

    Publication Year: 1966 , Page(s): 16 - 17
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (265 KB)  

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  • [Back cover]

    Publication Year: 1966 , Page(s): 0
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    Freely Available from IEEE
  • Selection of Raman laser materials

    Publication Year: 1966 , Page(s): 1 - 8
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1560 KB)  

    In order to select Raman laser materials for a specific purpose, it is important to know which frequency shifts and excitation power thresholds can be expected from various substances. The thresholds are strongly dependent on the peak scattering cross sections of the corresponding incoherent Raman lines, and these cross sections can vary by several orders of magnitude between Raman lines from different molecules as well as between Raman lines from a single molecule. This paper points out how the rules concerning frequencies, intensities, degrees of depolarization, and line widths, established for incoherent Raman scattering, can be used as a guide for the prediction of Raman laser performance for new materials. Subsequently, all substances and participating vibrations which have been reported to exhibit stimulated Raman scattering to date are listed and discussed. View full abstract»

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  • Phenomena influencing the temperature behavior of stimulated emission in GaAs p-n junctions

    Publication Year: 1966 , Page(s): 9 - 15
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1168 KB)  

    The decrease of internal efficiency with increasing temperature in injection lasers has been assumed in the past to be responsible for the increase in threshold and the decrease in external efficiency. This decrease in internal efficiency has been attributed to the greater hole-electron smearing, with a consequent reduction of the degree to which inverted population occurs in the region in which stimulated emission takes place. This paper shows that the increase in hole and electron smearing which occurs at elevated temperatures has a negligible influence in degenerate GaAs laser diodes in contrast to the greater optical loss arising from p -region absorption. It is demonstrated that the increase in threshold is due to the stronger p -type absorption at 300°K. On this basis, it is also shown that the threshold current ratio J_{th} (300\deg K)/ J_{th} (77\deg K) ranges from 12 to 20.0. This range is in agreement with experimental values. In this calculation the internal quantum efficiency is assumed to remain constant in the temperature range from 77°K to 300°K. The laser line width increases from 0.75 Å at 77°K to 5 Å at 300°K. In addition, there is a corresponding increase in apparent mode spacing. These data indicate that the cavity Q decreases by approximately one order of magnitude from 77°K to 300°K. The correspondence between the cavity Q and the threshold is shown. Calculated and experimental ratio values of threshold and cavity Q are shown employing absorption data for GaAs in the literature. As further confirmation, curves of threshold, line width, and cavity Q with temperature are all shown to have the same shape. The data presented and the calculations made on the assumed model show that the p -type absorption loss is the dominant mechanism in increasing threshold in degenerate junctions and that hole-electron smearing is negligible. View full abstract»

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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

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Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University