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Quantum Electronics, IEEE Journal of

Issue 6 • Date June 1987

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Displaying Results 1 - 25 of 70
  • [Front cover and table of contents]

    Page(s): 0
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  • Announcing a joint special issue of the journal of lightwave technology and the IEEE journal of quantum electronics on integrated optics

    Page(s): 647
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  • Announcing a special issue of the IEEE journal of quantum electronics on nonlinear optical phase conjugation

    Page(s): 648
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  • Editorial

    Page(s): 649
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  • Introduction to the special issue on semiconductor lasers

    Page(s): 650
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  • Preface

    Page(s): 658
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  • Injection lasers

    Page(s): 674 - 678
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    First Page of the Article
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  • [Back cover]

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  • Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers

    Page(s): 993 - 999
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    A theoretical analysis is presented which shows that the threshold current of thin single quantum well injection lasers can be virtually independent of cavity length over a wide range of dimensions, in agreement with experimental observations. In short devices, however, additional nonradiative mechanisms such as Auger processes, recombination fromLvalleys, and carrier leakage become significant and cause a sharp increase of the threshold current as well as a collapse of the quantum efficiency. Discontinuous lasing wavelength shifts toward shorter values are expected as the cavity length is reduced. These features are in marked contrast with the behavior of conventional double-heterostructure devices. View full abstract»

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  • On the theory of external cavity operated single-mode semiconductor lasers

    Page(s): 1000 - 1004
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    A theory for the line width and steady-state behavior of an external cavity laser is presented. The theory, valid for arbitrarily strong feedback, is a generalization of existing theories which neglect multiple reflections. The line-width reduction is analyzed taking into account both the phase condition and threshold change for the feedback induced modes. The stable tuning range for the phase in the external cavity is calculated. View full abstract»

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  • InGaAsP-InP laser amplifier with integrated passive waveguides

    Page(s): 1021 - 1026
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    A 1.3 μm laser amplifier with integrated passive waveguides is demonstrated. The structure is easily integrable and is suitable for compensation of all kinds of losses in optoelectronic integrated circuits such as losses due to power splitting in switch matrices. A simple model is made to calculate the coupling efficiency and reflection between the active and passive waveguides of the amplifier. Experimental results are in agreement with the theoretical predictions. The highest obtained external cavity gain of the whole structure is 19.5 dB and the output power saturates at approximately 15 mW. View full abstract»

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  • Enhanced optical nonlinearities in quantum well structures due to exciton localization

    Page(s): 983 - 987
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    The third-order optical nonlinearitychi^{(3)}of bound excitons can have a large value as a consequence of double multiplication of the giant oscillator strength because thechi^{(3)}process involves double repetition of the excitonic transition. A proposal to use the bound exciton level in the sheet-doped quantum well structure is made to obtain a largechi^{(3)}value. View full abstract»

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  • Semiconductor alloy lasers--1962

    Page(s): 684 - 691
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    Following the report of high-efficiency generation and transmission of recombination radiation from Zn-diffused GaAs p-n junctions at the 1962 IRE Solid State Device Research Conference (July, Durham, NH), a many-laboratory race began to construct a semiconductor laser. Although it is widely believed that only GaAs was involved in the research that led to a semiconductor laser, the visible-spectrum alloy GaAs1-xPxwas in the middle of this activity and was (fall of 1962), with GaAs, a first semiconductor laser, not to mention the first laser in a semiconductor alloy or crystal that could be "tuned" in energy gap (and wavelength) from direct-gap to indirect-gap. The ternary GaAs1-xPxwas the forerunner of all present-day III-V alloys used in heterojunction devices. The sequence of events leading to the GaAs1-xPxlaser, as well as its introduction in modified form as the first practical LED, are described. View full abstract»

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  • Spectral characteristics for 1.5 µm DBR laser with frequency-tuning region

    Page(s): 835 - 838
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    A 1.5 μm frequency-tunable distributed Bragg reflector (DBR) laser was developed. Frequency tuning was performed by injecting current into the DBR region where the refractive index was reduced to result in the Bragg frequency change. Threshold current and external quantum efficiency were 16 mA and 26 percent, respectively. The maximum continuous wavelength tuning range was 1.03 nm ( = 136 GHz). Spectral linewidth was maintained at an almost constant value when the wavelength was tuned. Large frequency modulation (FM) efficiency of 1-3 GHz/mA and flat FM response up to a few hundred MHz were obtained. View full abstract»

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  • Vertically grating-coupled ARROW structures for III--V integrated optics

    Page(s): 889 - 897
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    We propose a new all-planar technology scheme for coupling active gain or absorbing regions to low-propagation-loss, large-mode passive regions using monolithic waveguides vertically directionally coupled with a grating in an antiresonant reflecting optical waveguide (ARROW) geometry. Basic aspects of the concept have been demonstrated by laser action in an InGaAsP/InP ARROW grown by hydride vapor phase epitaxy and optically pumped by a Nd:YAG laser. This is the first demonstration of interlayer vertical directional grating coupling in III-V waveguides. View full abstract»

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  • Systematics of laser operation in GaAs/AlGaAs multiquantum well heterostructures

    Page(s): 969 - 976
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    Important laser parameters of GaAs/AlGaAs MQWH's were measured by means of optical gain spectroscopy. Unsaturated optical net gain spectra are carefully analyzed using a model for band-to-band transitions including momentum conservation and an energy-and density-dependent lifetime broadening. The calculated dependence of the peak gain on the carrier density agrees well with experimental data. The description of energetic positions of the peak gain has to include a bandgap shrinkage with carrier density, present at laser threshold. Temperature-dependent measurements of the onset of optical net gain reveal a pure thermodynamic behavior of the absolute threshold values as a function of Lzand of the characteristic temperature T0. View full abstract»

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  • Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

    Page(s): 936 - 942
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    We reported the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga0.47In0.53As/InP DH and MQW lasers emitting at1.47-1.72 mum. The very low threshold current densities of 1.3 and 1.5 kA/cm2obtained for DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are of high quality. In fact, theseJth's are the lowest obtained thus far for such lasers. Such results are consistent with the extremely high-quality Ga0.47In0.53As epilayers and Ga0.47In0.53As/InP quantum well structures also obtained grown by this technique. Differential quantum efficiency of ∼ 18 percent per facet was obtained for both DH and MQW lasers. Further, we were also able to show that there was a definite improvement in T0fromsim 35-45K for DH laser wafers tosim 65-80K for MQW laser wafers in contrast to previous experimental results. This, we believe, is due to the improvement in both material and heterointerface qualities of the present layer structures as a result of the different growth chemistries occurring on the substrate surface when compared to molecular beam epitaxy and better control of composition transition and cleaner growth environment in CBE than in metalorganic chemical vapor deposition. View full abstract»

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  • Yield analysis of second-order DSM DFB lasers and implications for design

    Page(s): 849 - 859
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    The results of yield analysis of dynamic single-mode (DSM) second-order distributed feedback (DFB) lasers are presented. Design implications of this analysis are discussed. Three ways of achieving DSM operation which, depending on the design, can operate simultaneously are considered: radiation loss, asymmetric end cavity reflections, and phase shifting of a grating. The interplay among these mode selection mechanisms is analyzed under conditions of random facet cleaving. The calculated expected yield is subjected to three constraints: a minimum side-mode suppression ratio, a maximum threshold current, and a minimum external quantum efficiency. A comparison of DSM performance between first-order and second-order DFB lasers of analogous designs is also included. View full abstract»

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  • Local normal mode analysis index-guided AlGaAs lasers with mode filter

    Page(s): 730 - 737
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    The mode filtering properties of index-guided lasers containing a lateral mode filter section are investigated using the beam propagation method combined with a lateral local normal mode decomposition. These structures are shown to have higher kink currents than filterless devices. Furthermore, the choice of the filter length is observed to be a tradeoff between low thresholds (short filters) and suitable far fields at the filter side (long filters). View full abstract»

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  • An introduction to the development of the semiconductor laser

    Page(s): 651 - 657
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    In late 1962, the first semiconductor injection lasers were reported. While earlier workers had considered the possibility of light amplification in semiconductors, the achievement of high-efficiency electroluminescence from forward-biased GaAs p-n junctions was the event that catalyzed and accelerated efforts to demonstrate a semiconductor laser. This paper will attempt to review the experimental and theoretical work that preceded the actual demonstration of the semiconductor diode laser. View full abstract»

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  • A novel high-power laser structure with current-blocked regions near cavity facets

    Page(s): 760 - 764
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    A novel high-power GaAlAs laser structure has been developed. In the new structure, current-blocked regions are formed near both facets for suppressing local temperature rise. Furthermore, the active layer is made thin only in the vicinity of the facets in order to enlarge the spot size without significant increase of the operating current. The experimentally fabricated laser with the new structure exhibited a COD power density 1.4 times higher and a degradation rate 1/2 times lower than those of the conventional structure lasers. View full abstract»

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  • High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers

    Page(s): 738 - 743
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    Maximum CW output power was investigated in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity. Long-cavity lasers show a strong dependence of maximum output power on front reflectivity. A CW light output over 200 mW was obtained at room temperature using a 700 μm long cavity laser with 5 and 98 percent reflectivity of the front and rear facets, respectively. The fundamental transverse mode operation was confirmed up to 170 mW. A coupled power over 110 mW into a single-mode fiber was achieved with a coupling efficiency of 58 percent. We have verified the high reliability under high power levels, as high as 75 percent of the maximum CW output powers at room temperature. View full abstract»

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  • Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition

    Page(s): 839 - 842
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    AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure (SCH) distributed-feedback (DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure metalorganic chemical vapor deposition (MOCVD) growth technique. A CW threshold current as low as 18 mA and an output power of more than 10 mW per facet at room temperature were obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level. View full abstract»

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  • A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor

    Page(s): 919 - 924
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    A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated. View full abstract»

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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University